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Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.


Papers
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Journal ArticleDOI
TL;DR: In this article, single-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field effect transistors were fabricated on a semi-insulating β-Ga 2O3 (010) substrate.
Abstract: Single-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors were fabricated on a semi-insulating β-Ga2O3 (010) substrate. A Sn-doped n-Ga2O3 channel layer was grown by molecular-beam epitaxy. Si-ion implantation doping was performed to source and drain electrode regions for obtaining low-resistance ohmic contacts. An Al2O3 gate dielectric film formed by atomic layer deposition passivated the device surface and significantly reduced gate leakage. The device with a gate length of 2 μm showed effective gate modulation of the drain current with an extremely low off-state drain leakage of less than a few pA/mm, leading to a high drain current on/off ratio of over ten orders of magnitude. A three-terminal off-state breakdown voltage of 370 V was achieved. Stable transistor operation was sustained at temperatures up to 250 °C.

544 citations

Patent
Sang-Bom Kang1, Hyun-Seok Lim1, Yung-sook Chae1, In-Sang Jeon1, Gil-heyun Choi1 
23 Feb 2000
TL;DR: In this article, a method of forming a metal layer having excellent thermal and oxidation resistant characteristics using atomic layer deposition is provided, where the metal layer includes a reactive metal (A), an element (B) for the amorphous combination between the reactive metal and nitrogen (N), and nitrogen(N).
Abstract: A method of forming a metal layer having excellent thermal and oxidation resistant characteristics using atomic layer deposition is provided. The metal layer includes a reactive metal (A), an element (B) for the amorphous combination between the reactive metal (A) and nitrogen (N), and nitrogen (N). The reactive metal (A) may be titanium (Ti), tantalum (Ta), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo) or niobium (Nb). The amorphous combination element (B) may be aluminum (Al), silicon (Si) or boron (B). The metal layer is formed by alternately injecting pulsed source gases for the elements (A, B and N) into a chamber according to atomic layer deposition to thereby alternately stack atomic layers. Accordingly, the composition ratio of a nitrogen compound (A—B—N) of the metal layer can be desirably adjusted just by appropriately determining the number of injection pulses of each source gas. According to the composition ratio, a desirable electrical conductivity and resistance of the metal layer can be accurately obtained. The atomic layers are individually deposited, thereby realizing excellent step coverage even in a complex and compact region. A metal layer formed by atomic layer deposition can be employed as a barrier metal layer, a lower electrode or an upper electrode in a semiconductor device.

544 citations

Journal ArticleDOI
TL;DR: In this paper, a chemical reactor was constructed for growing thin films using atomic layer deposition (ALD) techniques, which utilizes a viscous flow of inert carrier gas to transport the reactants to the sample substrates and to sweep the unused reactants and reaction products out of the reaction zone.
Abstract: A chemical reactor was constructed for growing thin films using atomic layer deposition (ALD) techniques. This reactor utilizes a viscous flow of inert carrier gas to transport the reactants to the sample substrates and to sweep the unused reactants and reaction products out of the reaction zone. A gas pulse switching method is employed for introducing the reactants. An in situ quartz crystal microbalance (QCM) in the reaction zone is used for monitoring the ALD film growth. By modifying a commercially available QCM housing and using polished QCM sensors, quantitative thickness measurements of the thin films grown by ALD are obtained in real time. The QCM is employed to characterize the performance of the viscous flow reactor during Al2O3 ALD.

537 citations

Journal ArticleDOI
TL;DR: A review of the current research efforts in ALD for metal and nitride films as well as their applications in modern semiconductor device fabrication can be found in this paper, where the authors provide a deeper understanding about the underlying deposition process and the physical and electrical properties of the deposited films.
Abstract: Atomic layer deposition (ALD) has been studied for several decades now, but the interest in ALD of metal and nitride thin films has increased only recently, driven by the need for highly conformal nanoscale thin films in modern semiconductor device manufacturing technology. ALD is a very promising deposition technique with the ability to produce thin films with excellent conformality and compositional control with atomic scale dimensions. However, the applications of metals and nitrides ALD in semiconductor device processes require a deeper understanding about the underlying deposition process as well as the physical and electrical properties of the deposited films. This article reviews the current research efforts in ALD for metal and nitride films as well as their applications in modern semiconductor device fabrication.

534 citations

Journal ArticleDOI
TL;DR: In this article, the atomic layer deposition of smooth and highly conformal films of hafnium and zirconium oxides was studied using six metal alkylamide precursors.
Abstract: Atomic layer deposition (ALD) of smooth and highly conformal films of hafnium and zirconium oxides was studied using six metal alkylamide precursors for hafnium and zirconium. Water was used as an oxygen source during these experiments. As deposited, these films exhibited a smooth surface with a measured roughness equivalent to that of the substrate on which they were deposited. These films also exhibited a very high degree of conformality: 100% step coverage on holes with aspect ratios greater than 35. The films were completely uniform in thickness and composition over the length of the deposition reactor. The films were free of detectable impurities and had the expected (2:1) oxygen-to-metal ratio. Films were deposited at substrate temperatures from 50 to 500 °C from precursors that were vaporized at temperatures from 40 to 140 °C. The precursors were found to be highly reactive with hydroxylated surfaces. Their vapor pressures were measured over a wide temperature range. Deposition reactor design and ...

520 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023542
20221,013
20211,032
20201,269
20191,298
20181,322