Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
Papers published on a yearly basis
Papers
More filters
••
TL;DR: In this article, the effects of annealing on the morphology and crystallization kinetics for the high-κ gate dielectric replacement candidate hafnium oxide (HfO2) were reported.
Abstract: We report the effects of annealing on the morphology and crystallization kinetics for the high-κ gate dielectric replacement candidate hafnium oxide (HfO2). HfO2 films were grown by atomic layer deposition (ALD) on thermal and chemical SiO2 underlayers. High-sensitivity x-ray diffractometry shows that the as-deposited ALD HfO2 films on thermal oxide are polycrystalline, containing both monoclinic and either tetragonal or orthorhombic phases with an average grain size of ∼8.0 nm. Transmission electron microscopy shows a columnar grain structure. The monoclinic phase predominates as the annealing temperature and time increase, with the grain size reaching ∼11.0 nm after annealing at 900 °C for 24 h. The crystallized fraction of the film has a strong dependence on annealing temperature but not annealing time, indicating thermally activated grain growth. As-deposited ALD HfO2 films on chemical oxide underlayers are amorphous, but show strong signatures of ordering at a subnanometer level in Z-contrast scannin...
170 citations
••
TL;DR: In this article, an atomic layer deposition (ALD) approach was used to protect the surface of this cathode material powders from oxygen release during initial charge, which results in low initial coulombic efficiency, intense electrolyte oxidation and thermal instability.
170 citations
•
18 Mar 2003
TL;DR: A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium pre-compositions onto a substrate.
Abstract: A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and/or a gate dielectric layer of the transistor.
170 citations
•
07 Apr 2004TL;DR: In this paper, a dielectric layer alloyed with hafnium oxide and aluminum oxide and a method for fabricating the same was presented, and the method for fabrication was described.
Abstract: The present invention relates to a dielectric layer alloyed with hafnium oxide and aluminum oxide and a method for fabricating the same. At this time, the dielectric layer is deposited by an atomic layer deposition technique. The method for fabricating the hafnium oxide and aluminum oxide alloyed dielectric layer includes the steps of: depositing a single atomic layer of hafnium oxide by repeatedly performing a first cycle of an atomic layer deposition technique; depositing a single atomic layer of aluminum oxide by repeatedly performing a second cycle of the atomic layer deposition technique; and depositing a dielectric layer alloyed with the single atomic layer of hafnium oxide and the single atomic layer of aluminum oxide by repeatedly performing a third cycle including the admixed first and second cycles.
169 citations
••
TL;DR: X-ray photoelectron spectroscopy measurements have confirmed that suppressing the formation of interfacial layer at HfTiO/InGaAs interface can be achieved by introducing the Al2O3 interface passivation layer.
Abstract: In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical properties of MOS capacitors based on sputtering-derived HfTiO as gate dielectric on InGaAs substrate. Significant suppression of formation of Ga–O and As–O bond from InGaAs surface after deposition of ALD Al2O3 with growth cycles of 20 has been achieved. X-ray photoelectron spectroscopy (XPS) measurements have confirmed that suppressing the formation of interfacial layer at HfTiO/InGaAs interface can be achieved by introducing the Al2O3 interface passivation layer. Meanwhile, increased conduction band offset and reduced valence band offset have been observed for HfTiO/Al2O3/InGaAs gate stack. Electrical measurements of MOS capacitor with HfTiO/Al2O3/InGaAs gate stacks with dielectric thickness of ∼4 nm indicate improved electrical performance. A low interface-state density of (∼1.9) × 1012 eV–1 cm–2 with low frequency dispersion ...
169 citations