Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
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TL;DR: (Zn,Cu) hydroxy double salt intermediate formed in situ from ZnO particles or thin films enables rapid growth of HKUST-1 (Cu3(BTC)2) at room temperature, and the space-time-yield reaches >3 × 10(4) kg·m(-3)·d(-1), at least 1 order of magnitude greater than any prior report.
Abstract: Rapid room-temperature synthesis of metal–organic frameworks (MOFs) is highly desired for industrial implementation and commercialization. Here we find that a (Zn,Cu) hydroxy double salt (HDS) intermediate formed in situ from ZnO particles or thin films enables rapid growth ( 3 × 104 kg·m–3·d–1, at least 1 order of magnitude greater than any prior report. The high anion exchange rate of (Zn,Cu) hydroxy nitrate HDS drives the ultrafast MOF formation. Similarly, we obtained Cu-BDC, ZIF-8, and IRMOF-3 structures from HDSs, demonstrating synthetic generality. Using ZnO thin films deposited via atomic layer deposition, MOF patterns are obtained on pre-patterned surfaces, and dense HKUST-1 coatings are grown onto various form factors, including polymer spheres, silicon wafers, and fibers. Breakthrough tests show that the MOF-functionalized fibers have high adsorption capacity for toxic gases. This rapid synthesis route is also prom...
169 citations
TL;DR: The Tafel slope on the amorphous film suggests the Volmer-Heyrovsky mechanism as a major pathway for the HER in which a primary discharging step for hydrogen adsorption is followed by the rate-determining electrochemical desorption of hydrogen gas.
Abstract: Recently amorphous MoS2 thin film has attracted great attention as an emerging material for electrochemical hydrogen evolution reaction (HER) catalyst. Here we prepare the amorphous MoS2 catalyst on Au by atomic layer deposition (ALD) using molybdenum hexacarbonyl (Mo(CO)6) and dimethyl disulfide (CH3S2CH3) as Mo and S precursors, respectively. Each active site of the amorphous MoS2 film effectively catalyzes the HER with an excellent turnover frequency of 3 H2/s at 0.215 V versus the reversible hydrogen electrode (RHE). The Tafel slope (47 mV/dec) on the amorphous film suggests the Volmer–Heyrovsky mechanism as a major pathway for the HER in which a primary discharging step (Volmer reaction) for hydrogen adsorption is followed by the rate-determining electrochemical desorption of hydrogen gas (Heyrovsky reaction). In addition, the amorphous MoS2 thin film is electrically evaluated to be rather conductive (0.22 Ω–1 cm–1 at room temperature) with a low activation energy of 0.027 eV. It is one of origins fo...
169 citations
Patent•
28 Feb 2005
TL;DR: In this paper, a process for producing the hafnium halide compositions having a zirconium concentration of less than about 1000 parts per million, organometallic compound precursors, and a method for producing a film or coating from the organometric compound precursor is described.
Abstract: This invention relates to hafnium halide compositions having a zirconium concentration of less than about 1000 parts per million, a process for producing the hafnium halide compositions having a zirconium concentration of less than about 1000 parts per million, organometallic compound precursors, a process for producing the organometallic compound precursors, and a method for producing a film or coating from the organometallic compound precursors. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
169 citations
169 citations
TL;DR: It is proposed that atomic layer deposition (ALD) coating on LATP surfaces is able to stabilize the LATP/Li interface by reducing the side reactions, and the results suggest that ALD is very effective in improving solid-state electrolyte/electrode interface stability.
Abstract: Solid-state batteries have been considered as one of the most promising next-generation energy storage systems because of their high safety and energy density. Solid-state electrolytes are the key component of the solid-state battery, which exhibit high ionic conductivity, good chemical stability, and wide electrochemical windows. LATP [Li1.3Al0.3Ti1.7 (PO4)3] solid electrolyte has been widely investigated for its high ionic conductivity. Nevertheless, the chemical instability of LATP against Li metal has hindered its application in solid-state batteries. Here, we propose that atomic layer deposition (ALD) coating on LATP surfaces is able to stabilize the LATP/Li interface by reducing the side reactions. In comparison with bare LATP, the Al2O3-coated LATP by ALD exhibits a stable cycling behavior with smaller voltage hysteresis for 600 h, as well as small resistance. More importantly, on the basis of advanced characterizations such as high-resolution transmission electron spectroscope-electron energy loss spectroscopy, the lithium penetration into the LATP bulk and Ti4+ reduction are significantly limited. The results suggest that ALD is very effective in improving solid-state electrolyte/electrode interface stability.
169 citations