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Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.


Papers
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Journal ArticleDOI
TL;DR: In this article, a new method for preparing thin films of SnO2 by atomic layer deposition (ALD) using alternating exposures to tetrakis(dimethylamino) tin and hydrogen peroxide was presented.
Abstract: The authors present a new method for preparing thin films of SnO2 by atomic layer deposition (ALD) using alternating exposures to tetrakis(dimethylamino) tin and hydrogen peroxide. This method avoids problems of corrosion and agglomeration associated with the halogenated compound, SnCl4. Tin oxide films were successfully deposited on a variety of substrates using deposition temperatures of 50–300°C at an average growth rate of 1.2A∕cycle. They use in situ quartz crystal microbalance and quadrupole mass spectrometry measurements to explore the mechanism for SnO2 ALD. Scanning electron microscopy of SnO2 films deposited on Si(100) show that the SnO2 films are smooth, conformal, and nearly featureless, while atomic force microscopy yields a surface roughness of only 0.84nm for a film with a thickness of 92nm. X-ray diffraction reveals that the SnO2 films are amorphous. Films deposited on glass yielded a resistivity of ∼0.3Ωcm and an optical transmission of 94% for a film thickness of 140nm. X-ray photoelectr...

152 citations

Patent
03 Sep 2008
TL;DR: In this article, a method of depositing a SiN x C y liner on a porous low thermal conductivity (low-k) substrate by plasma-enhanced atomic layer deposition (PE-ALD) was proposed.
Abstract: A method of depositing a SiN x C y liner on a porous low thermal conductivity (low-k) substrate by plasma-enhanced atomic layer deposition (PE-ALD), which includes forming a SiN x C y liner on a surface of a low-k substrate having pores on a surface thereon, in which the low-k substrate is repeatedly exposed to a aminosilane-based precursor and a plasma selected from nitrogen, hydrogen, oxygen, helium, and combinations thereof until a thickness of the liner is obtained, and wherein the liner is prevented from penetrating inside the pores of a surface of the substrate. A porous low thermal conductivity substrate having a SiN x C y liner formed thereon by the method is also disclosed.

152 citations

Journal ArticleDOI
TL;DR: Atomic layer deposition is successfully applied to synthesize lithium iron phosphate in a layer-by-layer manner by using self-limiting surface reactions, showing great potential for vehicular lithium batteries and 3D all-solid-state microbatteries.
Abstract: Atomic layer deposition is successfully applied to synthesize lithium iron phosphate in a layer-by-layer manner by using self-limiting surface reactions. The lithium iron phosphate exhibits high power density, excellent rate capability, and ultra-long lifetime, showing great potential for vehicular lithium batteries and 3D all-solid-state microbatteries.

152 citations

Journal ArticleDOI
TL;DR: In this article, the properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.
Abstract: Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature ( 4 g/cm3), low stress ( 85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

152 citations

Journal ArticleDOI
TL;DR: In this paper, Niobium carbide thin films were synthesized by atomic layer deposition (ALD) using trimethylaluminum (TMA), NbF5, and NbCl5 precursors.
Abstract: Niobium carbide thin films were synthesized by atomic layer deposition (ALD) using trimethylaluminum (TMA), NbF5, and NbCl5 precursors. In situ quartz crystal microbalance (QCM) measurements performed at 200 and 290 °C revealed controlled, linear deposition with a high growth rate of 5.7 and 4.5 A/cycle, respectively. The chemical composition, growth rate, structure, and electronic properties of the films were studied over the deposition temperature range 125–350 °C. Varying amounts of impurities, including amorphous carbon (a-C), AlF3, NbFx, and NbClx, were found in all samples. A strong growth temperature dependence of film composition, growth rate, and room temperature DC resistivity was observed. Increasing film density, decreasing total impurity concentration, and decreasing resistivity were observed as a function of increasing deposition temperature for films grown with either NbF5 or NbCl5. Superconducting quantum interference device (SQUID) magnetometry measurements down to 1.2 K revealed a superc...

152 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023542
20221,013
20211,032
20201,269
20191,298
20181,322