Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
Papers published on a yearly basis
Papers
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12 Oct 2004TL;DR: In this article, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes, which can produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors.
Abstract: Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
149 citations
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TL;DR: In this article, the performance of Li-ion cells with graphite-based negative electrodes was investigated at voltages exceeding 4.5 V, where the positive composite electrodes were modified by adding nanoscale alumina powder.
149 citations
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13 Nov 2013TL;DR: In this paper, the methods of forming carbon films, structures and devices including the carbon films and systems for forming the carbon film are disclosed. But they do not discuss how to obtain a uniform thickness over a substrate.
Abstract: Methods of forming carbon films, structures and devices including the carbon films, and systems for forming the carbon films are disclosed. A method includes depositing a metal carbide film using atomic layer deposition (ALD). Metal from the metal carbide film is removed from the metal carbide film to form a carbon film. Because the films are formed using ALD, the films can be relatively conformal and can have relatively uniform thickness over the surface of a substrate.
149 citations
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TL;DR: In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality as discussed by the authors.
Abstract: In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality...
149 citations
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TL;DR: In this paper, ultrathin (7 nm) atomic layer deposited Al2O3 layers and highdeposition-rate plasma-enhanced chemical vapor deposited AlOx layers have been applied and characterized as rear-surface passivation for high-efficiency silicon solar cells.
Abstract: Ultrathin (7 nm) atomic layer deposited Al2O3 layers and high-deposition-rate plasma-enhanced chemical vapor deposited AlOx layers have been applied and characterized as rear-surface passivation for high-efficiency silicon solar cells. The excellent efficiency values (up to 21.3%-21.5%) demonstrate that both aluminum oxide deposition processes have a very high potential comparable to the reference cells with SiO2 passivation. The high voltages ( 680 mV), the excellent long-wavelength quantum efficiency, and the high short-circuit currents of these cells (~40 mA/ cm2) are a proof for the low rear-surface recombination velocity and excellent internal rear-surface reflection.
148 citations