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Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.


Papers
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Journal ArticleDOI
TL;DR: In this article, the relationship between the microstructure of the Al2O3 film, hydrogen diffusion, and defect passivation is explored in detail for a wide range of annealing temperatures.
Abstract: Annealing at moderate temperatures is required to activate the silicon surface passivation by Al2O3 thin films while also the thermal stability at higher temperatures is important when Al2O3 is implemented in solar cells with screenprinted metallization. In this paper, the relationship between the microstructure of the Al2O3 film, hydrogen diffusion, and defect passivation is explored in detail for a wide range of annealing temperatures. The chemical passivation was studied using stacks of thermally-grown SiO2 and Al2O3 synthesized by atomic layer deposition. Thermal effusion measurements of hydrogen and implanted He and Ne atoms were used to elucidate the role of hydrogen during annealing. We show that the passivation properties were strongly dependent on the annealing temperature and time and were significantly influenced by the Al2O3 microstructure. The latter was tailored by variation of the deposition temperature (Tdep = 50 °C–400 °C) with hydrogen concentration [H] between 1 and 13 at.% and mass den...

144 citations

Patent
14 Mar 2013
TL;DR: In this article, methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane or borane agent are provided, where the process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemicals are incorporated into the thin film, and a third source chemical is a Silane or Borane that at least partially reduces oxidized portions of the titanium
Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

144 citations

Patent
23 Jul 2013
TL;DR: A low temperature film is formed and densified by exposure to one or more of a plasma or radical species as discussed by the authors, and the resulting densified film has superior properties to low temperature films formed without densification.
Abstract: Provided are methods and apparatus for low temperature atomic layer deposition of a densified film. A low temperature film is formed and densified by exposure to one or more of a plasma or radical species. The resulting densified film has superior properties to low temperature films formed without densification.

144 citations

Journal ArticleDOI
TL;DR: In this paper, the authors report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O.
Abstract: The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film’s WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx ...

144 citations

Journal ArticleDOI
TL;DR: A mere 2 nm conformal titanium dioxide overlayer coated by atomic layer deposition is shown to act as a blocking layer for high-efficiency solid-state perovskite (CH3NH3PbI3) absorber-based solar cells.
Abstract: A mere 2 nm conformal titanium dioxide overlayer coated by atomic layer deposition is shown to act as a blocking layer for high-efficiency solid-state perovskite (CH3NH3PbI3) absorber-based solar cells. Surpassing the existing multilayer passivation, this ultrathin sub-nanometer layer leads to a photovoltaic power conversion efficiency of 11.5%.

143 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023542
20221,013
20211,032
20201,269
20191,298
20181,322