Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
Papers published on a yearly basis
Papers
More filters
••
TL;DR: A review of the literature on rare-earth oxide thin films and their use as dielectrics can be found in this article, where ternary oxides with aluminum and silicon are also highlighted.
143 citations
••
TL;DR: In this paper, an atomic layer deposition (ALD) from diethyl Zn (DEZ) as a metal precursor and water as a reactant at growth temperatures between 100 and 250°C was used to obtain pure ZnO thin films.
143 citations
••
TL;DR: In this paper, an atomic layer deposition was used to passivate surface trap states in mesoporous TiO2 nanoparticles for solid-state dye-sensitized solar cells based on 2,2,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD).
Abstract: We report here the utilization of atomic layer deposition to passivate surface trap states in mesoporous TiO2 nanoparticles for solid-state dye-sensitized solar cells based on 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD). By depositing ZrO2 films with angstrom-level precision, coating the mesoporous TiO2 produces over a two-fold enhancement in short-circuit current density, as compared to a control device. Impedance spectroscopy measurements provide evidence that the ZrO2 coating reduces recombination losses at the TiO2/spiro-OMeTAD interface and passivates localized surface states. Low-frequency negative capacitances, frequently observed in nanocomposite solar cells, have been associated with the surface-state mediated charge transfer from TiO2 to the spiro-OMeTAD.
143 citations
••
TL;DR: In this article, Al-doped ZnO (AZO) films were deposited by atomic layer deposition (ALD) on borosilicate glass and sapphire(0001) substrates.
Abstract: Al-doped ZnO (AZO) films were deposited by atomic layer deposition (ALD) on borosilicate glass and sapphire(0001) substrates. The Al composition of the films was varied from 1% to 4% by controlling the ratio of Zn:Al pulses. Film resistivity was measured as a function of Al content and the substrate temperature used for ALD deposition. X-ray diffraction (XRD) was performed on the films, showing a reduction in lattice parameter, as a function of Al concentration, indicating that Al3+ ions occupy substitutional sites in the ZnO lattice. The resistivity of films deposited on sapphire substrates (7.7 × 10−4 Ω cm) was lower than that on glass (3.0 × 10−3 Ω cm), because of the formation of textured grains with the c-axis aligned with respect to the sapphire surface, as confirmed by XRD. The surface morphology of the films on glass and sapphire was compared using scanning tunneling microscopy (STM) and scanning electron microscopy (SEM), which showed similar grain sizes on each substrate, suggesting that the dif...
143 citations
••
03 Dec 2009
TL;DR: In this article, the Direct Spacer Defined Double Patterning (DSDDP) was proposed to reduce the number of deposition and patterning steps by reducing the need of a patterned template hardmask.
Abstract: The inherent advantages of the Plasma-Enhanced Atomic Layer Deposition (PEALD) technologyexcellent
conformality and within wafer uniformity, no loading effectovercome the limitations in this domain of the standard
PECVD technique for spacer deposition. The low temperature process capability of PEALD silicon oxide enables direct
spacer deposition on photoresist, thus suppressing the need of a patterned template hardmask to design the spacers. By
decreasing the number of deposition and patterning steps, this so-called Direct Spacer Defined Double Patterning (DSDDP)
integration reduces cost and complexity of the conventional SDDP approach. A successful integration is reported
for 32 nm half-pitch polysilicon lines. The performances are promising, especially from the lines, which result from the
PEALD spacers: Critical Dimension Uniformity (CDU) of 1.3 nm and Line Width Roughness (LWR) of 2.0 nm.
143 citations