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Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.


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Journal ArticleDOI
TL;DR: In this article, the NH 3 -catalyzed sequential surface reactions were used to accelerate ultrathin SiO 2 films to 300-338 K with atomic layer control using NH 3 catalyzed sequential reaction.

138 citations

Journal ArticleDOI
TL;DR: In this article, an atomic layer deposition (ALD) exposure sequence was used to quantify the reaction between vapor-phase precursors and common polymers with different substituents using in situ infrared transmission analysis.
Abstract: Fundamental reaction processes between vapor-phase chemical precursors and high molecular weight polymers are important for polymer coating, encapsulation and surface modification. Using trimethylaluminium and water in an atomic layer deposition (ALD) exposure sequence, reactions between vapor-phase trimethylaluminium and common polymers with different substituents are quantified using in situ infrared transmission analysis. Exposing polypropylene to trimethylaluminium results in reactant uptake with minimal precursor/polymer reaction, but the precursor/water ALD sequence leads to subsurface alumina nucleation. A similar treatment to polyvinyl alcohol and polyamide-6 results in rapid precursor diffusion and significant reaction observed by IR, and the extent of reaction is consistent with results from in situ quartz crystal microgravimetry and transmission electron microscopy. Reacting trimethylaluminium with polyamide-6 leads to methyl group insertion into the amide carbonyl group and interaction with the hydrogen-bonded amine units. Multiple ALD reaction cycles produce film coatings on all polymers studied, but the coating structure depends strongly on the starting polymer composition. For the weakly interacting polypropylene, cross-sectional transmission electron microscopy demonstrates enhanced sub-surface growth at 90 °C as compared to that at 60 °C, while images of coated polyamide-6 fibers showed that growth is not strongly temperature dependent in that range. Micrograph images of polyamide-6 samples exposed to extended TMA doses revealed significant modification of the fiber surface region, demonstrating that the precursor could diffuse and react to depths in excess of 100 nm into the surface of the polymer at 90 °C. Improved understanding of specific precursor/polymer reaction pathways can be important to optimize the performance of conformal inorganic thin film coatings on polymers.

138 citations

Journal ArticleDOI
TL;DR: In this article, the electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) Al2O3, HfO2, and HfAlO gate dielectrics on sulfur-passivated (Spassivated) GaAs substrates were investigated.
Abstract: In this paper, electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) Al2O3, HfO2, and HfAlO gate dielectrics on sulfur-passivated (S-passivated) GaAs substrates were investigated. HfAlO on p-type GaAs has shown superior electrical properties over Al2O3 or HfO2 on GaAs, and it is attributed to the reduction of the Ga-O formation at the interfacial layer. HfAlO on p-type GaAs exhibits the best electrical properties after postdeposition annealing (PDA) at 500degC. It is found that PDA, at above 500degC, causes a significant amount of Ga and As out-diffusion into the high-k dielectric, which degrades the interface, as well as bulk high-k properties.

138 citations

Journal ArticleDOI
TL;DR: The improved electrochemical performance is attributed to the formation of an artificial solid electrolyte interphase layer, stabilizing ZnO and the electrolyte by preventing the aggregation of Zn/ZnO nanograins and the side reaction that would cause the degradation of anodes.
Abstract: Atomic layer deposition (ALD) was applied to deposit ZnO on graphene aerogel, and this composite was used as an anode material for lithium ion batteries. This electrode material was further modified by an ultrathin Al2O3 layer via ALD to stabilize its electrochemical stability. These two metal oxides were uniformly immobilized on graphene frameworks, and the Al2O3 coating strongly improved the electrochemical performances of ZnO–graphene aerogel composite anodes. Particularly, the composite with 10 ALD cycles of Al2O3 coating (denoted as ZnO–G-10) exhibited a high initial discharge capacity of 1513 mA h g−1 and maintained a reversible capacity of 490 mA h g−1 after 100 cycles at a current density of 100 mA g−1. Furthermore, the capacity retention rate increased from 70% to 90% in comparison with its uncoated counterpart after 100 cycles. The ZnO–G-10 anode also showed good rate-capability, delivering a discharge capacity of 415 mA h g−1 at 1000 mA g−1. The improved electrochemical performance is attributed to the formation of an artificial solid electrolyte interphase layer, stabilizing ZnO and the electrolyte by preventing the aggregation of Zn/ZnO nanograins and the side reaction that would cause the degradation of anodes.

138 citations

Journal ArticleDOI
TL;DR: In this article, a lowvoltage, high-performance amorphous indium gallium zinc oxide n-channel thin-film transistors fabricated using 100nm-thick Al2O3 grown by atomic layer deposition as the gate dielectric layer are presented.
Abstract: We report on low-voltage, high-performance amorphous indium gallium zinc oxide n-channel thin-film transistors fabricated using 100-nm-thick Al2O3 grown by atomic layer deposition as the gate dielectric layer. The Al2O3 gate dielectric shows very small current densities and has a capacitance density of 81±1 nF/cm2. Due to a very small contact resistance, transistors with channel lengths ranging from 100 μm down to 5 μm yield a channel-independent, field-effect mobility of 8±1 cm2/V s, subthreshold slopes of 0.1±0.01 V/decade, low threshold voltages of 0.4±0.1 V, and high on-off current ratios up to 6×107 (W/L=400/5 μm) at 5 V.

138 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023542
20221,013
20211,032
20201,269
20191,298
20181,322