Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
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TL;DR: The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement.
Abstract: High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180-200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25-45 cm2 V-1 s-1) than single oxide devices (typically 2-5 cm2 V-1 s-1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.
136 citations
TL;DR: In this article, a strong influence of growth temperature on the deposition rate and refractive index of TiO 2 thin films, grown by atomic layer deposition from TiCl 4 and H 2 O, was observed.
136 citations
Patent•
21 Jun 2000TL;DR: In this paper, an ultrathin, conformal coating is made using atomic layer deposition methods, which can be used as fillers for electronic packaging applications, for making cermet parts, as supported catalysts, as well as other applications.
Abstract: Particles have an ultrathin, conformal coating are made using atomic layer deposition methods. The base particles include ceramic and metallic materials. The coatings can also be ceramic or metal materials that can be deposited in a binary reaction sequence. The coated particles are useful as fillers for electronic packaging applications, for making ceramic or cermet parts, as supported catalysts, as well as other applications.
136 citations
TL;DR: It is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.
Abstract: This study examined the properties of Schottky-type diodes composed of Pt/TiO2/Ti, where the Pt/TiO2 and TiO2/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of ~ 109 was achieved at 1 V when the TiO2 film thickness was 19 nm. TiO2 film was grown by atomic layer deposition at a substrate temperature of 250 °C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to < 10 A cm − 2 for a large electrode (an area of ~ 60 000 µm2). However, the local current measurement showed a local forward current density as high as ~ 105 A cm − 2. Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.
136 citations
TL;DR: For the first time, X-ray photoelectron spectroscopy is used to elucidate the cathode electrolyte interphase (CEI) on ALD-coated electrodes, which contains less carbonate species and more inorganic species, resulting in significant increase in Coulombic efficiency and decrease in cathode impedance.
Abstract: Atomic layer deposition (ALD) is a commonly used coating technique for lithium ion battery electrodes. Recently, it has been applied to sodium ion battery anode materials. ALD is known to improve the cycling performance, Coulombic efficiency of batteries, and maintain electrode integrity. Here, the electrochemical performance of uncoated P2-Na2/3Ni1/3Mn2/3O2 electrodes is compared to that of ALD-coated Al2O3 P2-Na2/3Ni1/3Mn2/3O2 electrodes. Given that ALD coatings are in the early stage of development for NIB cathode materials, little is known about how ALD coatings, in particular aluminum oxide (Al2O3), affect the electrode–electrolyte interface. Therefore, full characterizations of its effects are presented in this work. For the first time, X-ray photoelectron spectroscopy (XPS) is used to elucidate the cathode electrolyte interphase (CEI) on ALD-coated electrodes. It contains less carbonate species and more inorganic species, which allows for fast Na kinetics, resulting in significant increase in Coulo...
136 citations