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Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.


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Journal ArticleDOI
TL;DR: ALD expands the palette of available chemical methods to functionalize SERS substrates, which will enable improved and diverse chemical control over the nature of analyte-surface binding for biomedical, homeland security, and environmental applications.
Abstract: A new method to stabilize and functionalize surfaces for surface-enhanced Raman spectroscopy (SERS) is demonstrated. Atomic layer deposition (ALD) is used to deposit a sub-1-nm alumina layer on silver film-over-nanosphere (AgFON) substrates. The resulting overlayer maintains and stabilizes the SERS activity of the underlying silver while presenting the surface chemistry of the alumina overlayer, a commonly used polar adsorbent in chromatographic separations. The relative affinity of analytes for alumina-modified AgFON substrates can be determined by their polarity. On the basis of SERS measurements, dipicolinic acid displays the strongest binding to the ALD alumina-modified AgFON among a set of pyridine derivatives with varying polarity. This strong affinity for carboxylate groups makes the SERS substrate an ideal candidate for bacillus spores detection using the dipicolinate biomarker. The SERS signal from extracted dipicolinate was measured over the spore concentration range 10-14−10-12 M to determine t...

413 citations

Journal ArticleDOI
TL;DR: In this article, it was demonstrated that Al2O3 provides an excellent level of surface passivation on highly B-doped c-Si with doping concentrations around 1019cm−3.
Abstract: From lifetime measurements, including a direct experimental comparison with thermal SiO2, a-Si:H, and as-deposited a-SiNx:H, it is demonstrated that Al2O3 provides an excellent level of surface passivation on highly B-doped c-Si with doping concentrations around 1019cm−3. The Al2O3 films, synthesized by plasma-assisted atomic layer deposition and with a high fixed negative charge density, limit the emitter saturation current density of B-diffused p+-emitters to ∼10 and ∼30fA∕cm2 on >100 and 54Ω∕sq sheet resistance p+-emitters, respectively. These results demonstrate that highly doped p-type Si surfaces can be passivated as effectively as highly doped n-type surfaces.

409 citations

Journal ArticleDOI
TL;DR: Yttria-stabilized zirconia (YSZ) films were synthesized by atomic layer deposition (ALD) as mentioned in this paper, using Tetrakis(dimethylamido)zirconium and tris(methylcyclopentadienyl)yttrium.
Abstract: Yttria-stabilized zirconia (YSZ) films were synthesized by atomic layer deposition (ALD). Tetrakis(dimethylamido)zirconium and tris(methylcyclopentadienyl)yttrium were used as ALD precursors with d...

407 citations

Journal ArticleDOI
TL;DR: In this article, the atomic layer deposition (ALD) was used to grow a thin platinum thin film at 300 °C by using methylcyclopentadienyl trimethylplatinum (MeCpPtMe3) and oxygen as precursors.
Abstract: Platinum thin films were grown at 300 °C by atomic layer deposition (ALD) using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen as precursors. The films had excellent uniformity, low resistivity, and low-impurity contents. Structural studies by X-ray diffraction showed that the films were strongly (111) oriented. Growth rates of 0.45 A cycle-1 were obtained with 4 s total cycle times. The film thickness was found to linearly depend on the number of the reaction cycles. Also, the possible reaction mechanism is discussed.

407 citations

Journal ArticleDOI
TL;DR: In this article, Al2O3 and TiO2 coatings were applied to Li-and manganese-rich cathode powder Li1.2Ni0.13Mn0.54Co0.
Abstract: Nanolayers of Al2O3 and TiO2 coatings were applied to lithium- and manganese-rich cathode powder Li1.2Ni0.13Mn0.54Co0.13O2 using an atomic layer deposition (ALD) method. The ALD coatings exhibited different surface morphologies; the Al2O3 surface film appeared to be uniform and conformal, while the TiO2 layers appeared as particulates across the material surface. In a Li-cell, the Al2O3 surface film was stable during repeated charge and discharge, and this improved the cell cycling stability, despite a high surface impedance. The TiO2 layer was found to be more reactive with Li and formed a LixTiO2 interface, which led to a slight increase in cell capacity. However, the repetitive insertion/extraction process for the Li+ ions caused erosion of the surface protective TiO2 film, which led to degradation in cell performance, particularly at high temperature. For cells comprised of the coated Li1.2Ni0.13Mn0.54Co0.13O2 and an anode of meso-carbon-micro-beads (MCMB), the cycling stability introduced by ALD was not enough to overcome the electrochemical instability of MCMB graphite. Therefore, protection of the cathode materials by ALD Al2O3 or TiO2 can address some of the capacity fading issues related to the Li-rich cathode at room temperature.

407 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023542
20221,013
20211,032
20201,269
20191,298
20181,322