Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.

Low‐Temperature Deposition of Zirconium Oxide–Based Nanocrystalline Films by Alternate Supply of Zr[OC(CH3)3]4 and H2O

Abstract: Zirconium oxide thin films were grown by atomic layer deposition (ALD) at low temperatures, ranging from 150°C to 300°C, by alternate surface reactions between Zr[OC(CH 3 ) 3 ] 4 and H 2 O. The films grown in the temperature range 200-300°C were nanocrystalline. No films could be deposited above 300°C. The refractive index of the films reached 1.95, measured at a wavelength of 580 nm. The permittivity of the nanocrystalline films was approximately 32. The permittivity and resistivity of the films were increased by depositing ZrO 2 -Ta 2 O 5 nanolaminates and annealing in ambient air.

Co3O4-modified TiO2 nanotube arrays via atomic layer deposition for improved visible-light photoelectrochemical performance.

Abstract: Composite Co3O4/TiO2 nanotube arrays (NTs) were fabricated via atomic layer deposition (ALD) of Co3O4 thin film onto well-aligned anodized TiO2 NTs. The microscopic morphology, composition, and interfacial plane of the composite structure were characterized by scanning electron microscopy, energy dispersion mapping, X-ray photoelectron spectra, and high-resolution transmission electron microscopy. It was shown that the ultrathin Co3O4 film uniformly coat onto the inner wall of the high aspect ratio (>100:1) TiO2 NTs with film thickness precisely controlled by the number of ALD deposition cycles. The composite structure with ∼4 nm Co3O4 coating revealed optimal photoelectrochemical (PEC) performance in the visible-light range (λ > 420 nm). The photocurrent density reaches as high as 90.4 μA/cm2, which is ∼14 times that of the pristine TiO2 NTs and 3 times that of the impregnation method. The enhanced PEC performance could be attributed to the finely controlled Co3O4 coating layer that enhances the visible-...

ALD of amorphous lanthanide doped TiOx films

Abstract: The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiO x ) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and thulium, produces a reliable structure for use in a variety of electronic devices. The dielectric structure is formed by depositing titanium oxide by atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing a layer of a lanthanide dopant, and repeating to form a sequentially deposited interleaved structure. Such a dielectric layer may be used as the gate insulator of a MOSFET, as a capacitor dielectric, or as a tunnel gate insulator in flash memories, because the high dielectric constant (high-k) of the film provides the functionality of a thinner silicon dioxide film, and because the reduced leakage current of the dielectric layer when the percentage of the lanthanide element doping is optimized.

Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same

Abstract: In a method of forming an oxide layer using an atomic layer deposition and a method of forming a capacitor of a semiconductor device using the same, a precursor including an amino functional group is introduced onto a substrate to chemisorb a portion of the precursor on the substrate. Then, the non-chemisorbed precursor is removed. Thereafter, an oxidant is introduced onto the substrate to chemically react the chemisorbed precursor with the oxidant to form an oxide layer on the substrate. A deposition rate is fast and an oxide layer having a good deposition characteristic may be obtained. Also, a thin oxide film having a good step coverage and a decreased pattern loading rate can be formed.