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Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.


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Journal ArticleDOI
TL;DR: In this paper, silica nanoparticles (40 nm) were individually and conformally coated with alumina films using atomic layer deposition (ALD) in a fluidized bed reactor and films were deposited using self-limiting sequential surface reactions of trimethylaluminum and water.
Abstract: Silica nanoparticles (40 nm) were individually and conformally coated with alumina films using atomic layer deposition (ALD) in a fluidized bed reactor. Films were deposited using self-limiting sequential surface reactions of trimethylaluminum and water. Alumina vibrational modes were observed using Fourier-transform infrared spectroscopy (FTIR). X-ray photoelectron spectroscopy (XPS) indicated complete coverage on the surface as the silica features were completely attenuated. Scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) showed high uniformity of the deposited films. Transmission electron microscopy (TEM) revealed extremely conformal films with an average growth rate of 0.11 nm per cycle. Self-limiting characteristics of ALD allowed primary nanoparticles to be coated as they fluidized as dynamic aggregates.

127 citations

Journal ArticleDOI
TL;DR: In this article, nitrogen-doped TiO2 films were grown by atomic layer deposition (ALD) using TiCl 4, N H 3 and water as precursors, and the films were characterized by XRD, XPS, SEM and UV-vis spectrometry.
Abstract: Titanium dioxide (TiO2) is recognized as the most efficient photocatalytic material, but due to its large band gap energy it can only be excited by UV irradiation. Doping TiO2 with nitrogen is a promising modification method for the utilization of visible light in photocatalysis. In this work, nitrogen-doped TiO2 films were grown by atomic layer deposition (ALD) using TiCl 4 ,N H 3 and water as precursors. All growth experiments were done at 500 ◦ C. The films were characterized by XRD, XPS, SEM and UV–vis spectrometry. The influence of nitrogen doping on the photocatalytic activity of the films in the UV and visible light was evaluated by the degradation of a thin layer of stearic acid and by linear sweep voltammetry. Light-induced superhydrophilicity of the films was also studied. It was found that the films could be excited by visible light, but they also suffered from increased recombination. © 2005 Elsevier B.V. All rights reserved.

127 citations

Journal ArticleDOI
TL;DR: In this article, thin (2-10 nm) silicon nitride films have been grown by repetitive plasma nitridation of Si using a NH3 remote plasma and deposition of Si by a SiH2Cl2 thermal reaction.
Abstract: Thin (2–10 nm) silicon nitride films have been grown by repetitive plasma nitridation of Si using a NH3 remote plasma and deposition of Si by a SiH2Cl2 thermal reaction. The deposition rate is self‐limited at nearly half‐molecular layer (ML) per one deposition cycle. The process window for the half‐ML/cycle of growth has been investigated with respect to the NH3 plasma power, SiH2Cl2 exposure time, and substrate temperature. The thickness fluctuation of the film over a 2 in. wafer is within measurement accuracy of the ellipsometer (± 1.9%) for the atomic layer controlled film while it is ± 8.5% for all the remote‐plasma chemical vapor deposition film.

127 citations

Journal ArticleDOI
TL;DR: Alumina shell formation on TiO 2 core nanoparticles by atomic layer deposition (ALD) is studied to suppress the recombination of charge carriers generated in a dye-sensitized solar cell as mentioned in this paper.

127 citations

Journal ArticleDOI
TL;DR: In this article, the authors demonstrate improved thermal stability of the amorphous phase for hafnium-based gate dielectrics through the controlled addition of Al2O3.
Abstract: We demonstrate significantly improved thermal stability of the amorphous phase for hafnium-based gate dielectrics through the controlled addition of Al2O3. The (HfO2)x(Al2O3)1−x films, deposited using atomic layer deposition, exhibit excellent control over a wide range of composition by a suitable choice of the ratio between the Al and Hf precursor pulses. By this method, extremely predictable hafnium aluminate compositions are obtained, with Hf cation fractions ranging from 20% up to 100%, as measured by medium energy ion scattering. Using x-ray diffraction, we show that (HfO2)x(Al2O3)1−x films with Hf:Al∼3:1 (25% Al) remain amorphous up to 900 °C, while films with Hf:Al∼1:3 (75% Al) remain amorphous after a 1050 °C spike anneal.

127 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023542
20221,013
20211,032
20201,269
20191,298
20181,322