Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.

Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

Abstract: Charge trapping characteristics of high-relative permittivity (high-?) HfO2 films with Al2O3 as a blocking oxide in p-Si/SiO2/HfO2/Al2O3/metal memory structures have been investigated. All high-? films have been grown by atomic layer deposition. A transmission electron microscope image shows that the HfO2 film is polycrystalline, while the Al2O3 film is partially crystalline after a high temperature annealing treatment at 1000 ?C for 10 s in N2 ambient. A well-behaved counter-clockwise capacitance?voltage hysteresis has been observed for all memory capacitors. A large memory window of ~7.4 V and a high charge trapping density of ~1.1 ? 1013 cm?2 have been observed for high-? HfO2 charge trapping memory capacitors. The memory window and charge trapping density can be increased with increasing thickness of the HfO2 film. The charge loss can be decreased using a thick trapping layer or thick tunnelling oxide. A high work function metal gate electrode shows low charge loss and large memory window after 10 years of retention. High-? HfO2 memory devices with high-? Al2O3 as a blocking oxide and a high work function metal gate can be used in future high-density non-volatile memory device applications.

Atomic layer deposition for nanomaterial synthesis and functionalization in energy technology

Abstract: Atomic layer deposition (ALD) has been receiving more and more research attention in the past few decades, ascribed to its unrivaled capabilities in controlling material growth with atomic precision, manipulating novel nanostructures, tuning material composition, offering multiple choices in terms of crystallinity, and producing conformal and uniform film coverage, as well as its suitability for thermally sensitive substrates. These unique characteristics have made ALD an irreplaceable tool and research approach for numerous applications. In this review, we summarize the recent advances of ALD in several important areas including rechargeable secondary batteries, fuel cells, solar cells, and optoelectronics. With this review, we expect to exhibit ALD's versatile potential in providing unique solutions to various technical challenges and also hope to further expand ALD's applications in emerging areas.

Methods of atomic-layer deposition of hafnium oxide/erbium oxide bi-layer as advanced gate dielectrics

Abstract: Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability. Erbium oxide can act as a barrier against oxygen diffusion, which can lead to increasing an effective oxide thickness of the gate dielectric and preventing hafnium-silicon reactions that may lead to higher leakage current.

CO2 Reduction to Methanol on TiO2-Passivated GaP Photocatalysts

Abstract: In the past, the electrochemical instability of III–V semiconductors has severely limited their applicability in photocatlaysis. As a result, a vast majority of the research on photocatalysis has been done on TiO2, which is chemically robust over a wide range of pH. However, TiO2 has a wide band gap (3.2 eV) and can only absorb ∼4% of the solar spectrum, and thus, it will never provide efficient solar energy conversion/storage on its own. Here, we report photocatalytic CO2 reduction with water to produce methanol using TiO2-passivated GaP photocathodes under 532 nm wavelength illumination. The TiO2 layer prevents corrosion of the GaP, as evidenced by atomic force microscopy and photoelectrochemical measurements. Here, the GaP surface is passivated using a thin film of TiO2 deposited by atomic layer deposition (ALD), which provides a viable, stable photocatalyst without sacrificing photocatalytic efficiency. In addition to providing a stable photocatalytic surface, the TiO2 passivation provides substantial...