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Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.


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Journal ArticleDOI
TL;DR: In this paper, current conduction mechanisms of an atomic layer-deposited HfO2 gate stacked on different thicknesses of thermally nitrided SiO2 based on n-type 4H SiC have been investigated and analyzed.
Abstract: In this paper, current conduction mechanisms of an atomic-layer-deposited HfO2 gate stacked on different thicknesses of thermally nitrided SiO2 based on n-type 4H SiC have been investigated and analyzed. Current-voltage and high-frequency capacitance-voltage measurements conducted at various temperatures (25−140 °C) were performed in metal-oxide-semiconductor test structures with 13 nm thick HfO2 stacked on 0-, 2-, 4-, or 6 nm thick nitrided SiO2. Various conduction mechanisms, such as Schottky emission, Fowler-Nordheim tunneling, Poole-Frenkel emission, and space-charge-limited conduction, have been systematically evaluated. The mechanisms of the current conducted through the oxides were affected by the thickness of the nitrided oxide and the electric field applied. Finally, current conduction mechanisms that contributed to hard and soft dielectric breakdown have been proposed.

121 citations

Journal ArticleDOI
TL;DR: The properties of titanium nitride deposited by atomic layer epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+ NH3 and TiCl 4+Zn+NH 3, as a diffusion barrier between cop...
Abstract: The properties of titanium nitride deposited by atomic layer epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between cop ...

121 citations

Journal ArticleDOI
TL;DR: In this paper, three kinds of nanolaminates were investigated as high-permittivity insulators for possible gate dielectric applications using atomic layer deposition, and the results showed that ZrO 2 /HfO 2 structures showed the highest breakdown field and the lowest leakage current.
Abstract: Thin stacks comprised of alternating layers of Ta 2 O 5 /HfO 2 , Ta 2 O 5 /ZrO 2 , and ZrO 2 /HfO 2 were investigated as high-permittivity insulators for possible gate dielectric applications These thin layers were deposited on silicon substrates using atomic layer deposition. Nanolaminates with silicon oxide equivalent thickness of about 2 nm had dielectric constants of around ten and leakage current densities at 1 MV/cm of around 10 -8 A/cm 2 . Of the three kinds of nanolaminates investigated. ZrO 2 /HfO 2 structures showed the highest breakdown field and the lowest leakage current.

121 citations

Journal ArticleDOI
TL;DR: An interfacial self-cleaning phenomenon was found in the atomic layer deposition of HfO2 on In0.15Ga0.85As∕GaAs substrate using Hf(NCH3C2H5)4, i.e., TEMAH, and H2O as the precursors as mentioned in this paper.
Abstract: An interfacial self-cleaning phenomenon was found in the atomic layer deposition of HfO2 on In0.15Ga0.85As∕GaAs substrate using Hf(NCH3C2H5)4, i.e., TEMAH, and H2O as the precursors. The native oxides of InGaAs were all satisfactorily removed from the interface through ligand exchange (substitution) reactions with the TEMAH precursor. It relieves the Fermi-level pinning in the HfO2∕InGaAs heterostructure, as verified by the clear transition from accumulation to depletion in high-frequency capacitance-voltage relations and inversion in quasistatic measurement. A very low leakage current was also found from the metal-oxide-semiconductor capacitors of Au∕Ti∕HfO2∕InGaAs.

121 citations

Journal ArticleDOI
TL;DR: In this article, an Al2O3 film was grown on powders prior to electrode fabrication, and directly on the electrode followed by a heat-treatment at 300°C in air.
Abstract: The lithium-excess layered oxide Li[Li0.2Mn0.54Ni0.13Co0.13]O2 has been surface modified with Al2O3 films grown with atomic layer deposition (ALD) and examined as cathodes for lithium-ion batteries. Al2O3 was grown on powders prior to electrode fabrication, directly on the electrode, and directly on the electrode followed by a heat-treatment at 300°C in air. Compared to the bare electrode, an Al2O3 film on an as-formed electrode improved the cycle performance significantly. Furthermore, the heat treatment of the ALD-coated electrodes result in significant increase in capacity, due to the transformation of the as-deposited Al2O3 to a better Li+-conductive material. X-ray photoelectron spectroscopy (XPS) results indicate that the heat-treatment leads to an inter-diffusion of atoms between the Al2O3 coating and the Li[Li0.20Mn0.54Ni0.13Co0.13]O2 core.

121 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023542
20221,013
20211,032
20201,269
20191,298
20181,322