Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
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TL;DR: In this paper, the leakage currents in Nb-based films were reduced by depositing thin alternate layers of Al 2 O 3 or Ta 2 O 5 and Nb 2 O 4, thereby increasing the number of interfaces between distinct oxide layers.
Abstract: Nb 2 O 5 , Ta 2 O 5 , and Al 2 O 3 solid solutions and nanolaminates were grown using atomic layer deposition technique. Electrical properties of the materials deposited were comparatively characterized by studying the behavior of Al/niobium-aluminum (tantalum) oxide/indium-tin oxide capacitor structures. The films with high Nb content demonstrated high polarizability and leakage current density. The films with high Al content demonstrated low leakage current densities. The leakage currents in Nb-based films were reduced by depositing thin alternate layers of Al 2 O 3 or Ta 2 O 5 and Nb 2 O 5 , thereby increasing the number of interfaces between distinct oxide layers. The permittivity of Nb 2 O 5 :Al 2 O 3 films could be increased with Nb 2 O 5 concentration without considerable loss in resistivity.
120 citations
TL;DR: The materials characteristics of Al2O3 films grown on a Si (100) substrate by traveling wave reactor atomic layer deposition were investigated in the growth temperature ranging from 250 to 500°C as discussed by the authors.
Abstract: The materials characteristics of Al2O3 films grown on a Si (100) substrate by traveling wave reactor atomic layer deposition were investigated in the growth temperature ranging from 250 to 500 °C. The Al2O3 films grown using Al(CH3)3 trimethylaluminum (TMA) and H2O as precursors were characterized and also compared with the films grown using AlCl3 and H2O. Both samples grown with different precursors revealed identical chemical binding state of oxidized Al and very flat surface morphology. In the study of impurity incorporation, the films grown using TMA showed the C and H count rates of secondary ion mass spectrometry (SIMS) approximately six and 10 times higher than those of the film grown using AlCl3, respectively. For the Al2O3 films grown using TMA, the results showed that the impurity contents and the growth rate of the films decreased and the refractive index increased with the growth temperature. The content of impurities could be also lowered by increasing the N2 purge time after TMA pulse. Howev...
120 citations
31 Mar 2014
TL;DR: In this article, the authors optimized the gas residence time during an excited species phase, where activated reactant is supplied such as from a plasma, to increase the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and reducing impurities in the layer.
Abstract: Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.
120 citations
TL;DR: NC MoS2 FETs are demonstrated by incorporating a ferroelectric Al-doped HfO2, a technologically compatible material, in the FET gate stack by exploiting the negative-capacitance effect in ferroElectric materials.
Abstract: Obtaining a subthreshold swing (SS) below the thermionic limit of 60 mV dec−1 by exploiting the negative-capacitance (NC) effect in ferroelectric (FE) materials is a novel effective technique to allow the reduction of the supply voltage and power consumption in field effect transistors (FETs). At the same time, two-dimensional layered semiconductors, such as molybdenum disulfide (MoS2), have been shown to be promising candidates to replace silicon MOSFETs in sub-5 nm-channel technology nodes. In this paper, we demonstrate NC MoS2 FETs by incorporating a ferroelectric Al-doped HfO2 (Al : HfO2), a technologically compatible material, in the FET gate stack. Al : HfO2 thin films were deposited on Si wafers by atomic layer deposition. Voltage amplification up to 1.25 times was observed in a FE bilayer stack of Al : HfO2/HfO2 with a Ni metallic intermediate layer. The minimum SS (SSmin) of the NC-MoS2 FET built on the FE bilayer improved to 57 mV dec−1 at room temperature, compared with SSmin = 67 mV dec−1 for the MoS2 FET with only HfO2 as a gate dielectric.
120 citations
TL;DR: An InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact is demonstrated, enabling a high maximum open-circuit voltage of 785 mV.
Abstract: We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%.
120 citations