Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
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24 Aug 2000TL;DR: In this paper, the atomic layer deposition (ALD) was used to achieve a highly conformal coverage of the insulating sidewalls in the opening of the trench, thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact.
Abstract: Methods are disclosed for selective deposition on desired materials In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the method advantageously lines insulating surfaces with a barrier material The selective formation allows the deposition to be “bottomless,” thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact when further conductive material is deposited into the opening after barrier formation on the insulating surfaces Desirably, the selective deposition is accomplished by atomic layer deposition (ALD), resulting in highly conformal coverage of the insulating sidewalls in the opening
376 citations
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TL;DR: This work shows that alternating exposure of a surface to vapors of trimethylaluminum and tris(tert-butoxy)silanol deposits highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates at rates of 12 nanometers (more than 32 monolayers) per cycle, and proposes that these ALD layers grow by a previously unknown catalytic mechanism that also operates during the rapid ALD of many other metal silicates.
Abstract: Highly uniform and conformal coatings can be made by the alternating exposures of a surface to vapors of two reactants, in a process commonly called atomic layer deposition (ALD). The application of ALD has, however, been limited because of slow deposition rates, with a theoretical maximum of one monolayer per cycle. We show that alternating exposure of a surface to vapors of trimethylaluminum and tris(tert-butoxy)silanol deposits highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates at rates of 12 nanometers (more than 32 monolayers) per cycle. This process allows for the uniform lining or filling of long, narrow holes. We propose that these ALD layers grow by a previously unknown catalytic mechanism that also operates during the rapid ALD of many other metal silicates. This process should allow improved production of many devices, such as trench insulation between transistors in microelectronics, planar waveguides, microelectromechanical structures, multilayer optical filters, and protective layers against diffusion, oxidation, or corrosion.
375 citations
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TL;DR: In this paper, the reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 was studied using in situ monochromatic x-ray photoelectron spectroscopy.
Abstract: The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied using in situ monochromatic x-ray photoelectron spectroscopy. Using the combination of in situ deposition and analysis techniques, the interfacial “self-cleaning” is shown to be oxidation state dependent as well as metal organic precursor dependent. Thermodynamics, charge balance, and oxygen coordination drive the removal of certain species of surface oxides while allowing others to remain. These factors suggest proper selection of surface treatments and ALD precursors can result in selective interfacial bonding arrangements.
375 citations
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TL;DR: A breakthrough in controlled full-electrode nanoscale coatings that enables nanosized materials to cycle with durable high energy and remarkable rate performance is reported.
Abstract: To deploy Li-ion batteries in next-generation vehicles, it is essential to develop electrodes with durability, high energy density, and high power. Here we report a breakthrough in controlled full-electrode nanoscale coatings that enables nanosized materials to cycle with durable high energy and remarkable rate performance. The nanoparticle electrodes are coated with Al2O3 using atomic layer deposition (ALD). The coated nano-LiCoO2 electrodes with 2 ALD cycles deliver a discharge capacity of 133 mAh/g with currents of 1400 mA/g (7.8C), corresponding to a 250% improvement in reversible capacity compared to bare nanoparticles (br-nLCO), when cycled at this high rate. The simple ALD process is broadly applicable and provides new opportunities for the battery industry to design other novel nanostructured electrodes that are highly durable even while cycling at high rate.
372 citations
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02 May 2002TL;DR: In this paper, a LaAlO 3 gate dielectric is formed by atomic layer deposition employing a lanthanum sequence and an aluminum sequence, which is thermodynamically stable and has minimal reactions with a silicon substrate or other structures during processing.
Abstract: A dielectric film containing LaAlO 3 and method of fabricating a dielectric film contained LaAlO 3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO 2 . The LaAlO 3 gate dielectrics formed are thermodynamically stable such that these gate dielectrics will have minimal reactions with a silicon substrate or other structures during processing. A LaAlO 3 gate dielectric is formed by atomic layer deposition employing a lanthanum sequence and an aluminum sequence. A lanthanum sequence uses La(thd) 3 (thd=2,2,6,6-tetramethl-3,5-heptanedione) and ozone. An aluminum sequence uses either trimethylaluminium, Al(CH 3 ) 3 , or DMEAA, an adduct of alane (AlH 3 ) and dimethylehtylamine [N(CH 3 ) 2 (C 2 H 5 )], with distilled water vapor.
369 citations