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Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.


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Journal ArticleDOI
TL;DR: In this paper, microstructural evolution and resulting changes in electrical properties of atomic-layer deposition-grown HfO2 on SiO2/Si substrates were studied as a function of annealing temperature in a N2 ambient.
Abstract: Microstructural evolution and resulting changes in electrical properties of atomic-layerdeposition-grown HfO2 on SiO2/Si substrates were studied as a function of annealing temperature in a N2 ambient. As deposited ∼30-A-thick HfO2 on 15 and 25 A thermal SiO2 were almost entirely amorphous, although a low density of crystalline seeds were observed and crystallization occurred from these nuclei during furnace anneals at temperatures >∼500 °C. The major crystalline phase thus formed was monoclinic, and some fraction of tetragonal phase was observed during crystallization according to transmission electron microscopy electron diffraction analysis. Complete crystallization occurred around 700 °C and, at higher temperatures, significant interfacial silicon dioxide growth was observed due to the presence of a small partial pressure of oxygen in the annealing ambient. No significant increase of leakage current in the trap-assisted tunneling conduction regime was observed during the intermediate and final stage of...

237 citations

Journal ArticleDOI
17 Oct 2013-ACS Nano
TL;DR: It is found that ALD on MoS2 bulk material is not uniform and surface functionalization will be required before controllable and low defect density high-κ/MoS2 interfaces will be realized.
Abstract: We report our investigation of the atomic layer deposition (ALD) of HfO2 on the MoS2 surface. In contrast to previous reports of conformal growth on MoS2 flakes, we find that ALD on MoS2 bulk material is not uniform. No covalent bonding between the HfO2 and MoS2 is detected. We highlight that individual precursors do not permanently adsorb on the clean MoS2 surface but that organic and solvent residues can dramatically change ALD nucleation behavior. We then posit that prior reports of conformal ALD deposition on MoS2 flakes that had been exposed to such organics and solvents likely rely on contamination-mediated nucleation. These results highlight that surface functionalization will be required before controllable and low defect density high-κ/MoS2 interfaces will be realized. The band structure of the HfO2/MoS2 system is experimentally derived with valence and conduction band offsets found to be 2.67 and 2.09 eV, respectively.

237 citations

Journal ArticleDOI
TL;DR: Iron oxide nanotubes of 50−150 nm outer diameter and 2−20 nm wall thickness are prepared in ordered arrays, and variations of the wall thickness dw have marked consequences on the magnetic response of the tube arrays.
Abstract: Iron oxide nanotubes of 50−150 nm outer diameter and 2−20 nm wall thickness are prepared in ordered arrays. Atomic layer deposition (ALD) of Fe2O3 from the precursor iron(III) tert-butoxide at 130−180 °C yields very smooth coverage of the pore walls of anodic alumina templates, with thickness growth of 0.26(±0.04) A per cycle. The reduced Fe3O4 tubes are hard ferromagnets, and variations of the wall thickness dw have marked consequences on the magnetic response of the tube arrays. For 50 nm outer diameter, tubes of dw = 13 nm yield the largest coercive field (Hc > 750 Oe), whereas lower coercivities are observed on both the thinner and thicker sides of this optimum.

236 citations

Patent
10 Mar 2003
TL;DR: In this paper, an MIM capacitor with low leakage and high capacitance is disclosed, where a layer of titanium nitride (TiN) or boron-doped titanium nitric oxide (TiBN) material is formed as a lower electrode over an optional capacitance layer of hemispherical grained polysilicon (HSG).
Abstract: An MIM capacitor with low leakage and high capacitance is disclosed. A layer of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) material is formed as a lower electrode over an optional capacitance layer of hemispherical grained polysilicon (HSG). Prior to the dielectric formation, the first layer may be optionally subjected to a nitridization or oxidation process. A dielectric layer of, for example, aluminum oxide (Al2O3) formed by atomic layer deposition (ALD) is fabricated over the first layer and after the optional nitridization or oxidation process. An upper electrode of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) is formed over the dielectric layer.

234 citations

Journal ArticleDOI
TL;DR: The selective functionalization of graphene defect sites, together with the nanowire morphology of deposited Pt, yields a superior platform for sensing applications and high-performance hydrogen gas sensors at room temperature are demonstrated.
Abstract: One-dimensional defects in graphene have a strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively functionalize the material and systematically tune the properties of graphene. Here we demonstrate the selective deposition of metal at chemical vapour deposited graphene’s line defects, notably grain boundaries, by atomic layer deposition. Atomic layer deposition allows us to deposit Pt predominantly on graphene’s grain boundaries, folds and cracks due to the enhanced chemical reactivity of these line defects, which is directly confirmed by transmission electron microscopy imaging. The selective functionalization of graphene defect sites, together with the nanowire morphology of deposited Pt, yields a superior platform for sensing applications. Using Pt–graphene hybrid structures, we demonstrate high-performance hydrogen gas sensors at room temperature and show its advantages over other evaporative Pt deposition methods, in which Pt decorates the graphene surface non-selectively. Defects in graphene strongly influence the material's physical properties, leading to the suggestion that defects might be tuned to improve performance. Here, via atomic layer deposition, the authors selectively deposit Pt at graphene line defects and yield a superior platform for sensing applications.

234 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023542
20221,013
20211,032
20201,269
20191,298
20181,322