Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
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TL;DR: In this paper, the reaction mechanism in atomic layer deposition (ALD) of ruthenium from biscyclopentadienyl ruthensium (RuCp 2 ) and oxygen were studied in situ with a quadruple mass spectrometer (QMS) and a quartz crystal microbalance (QCM).
Abstract: Reaction mechanisms in atomic layer deposition (ALD) of ruthenium from bis(cyclopentadienyl)ruthenium (RuCp 2 ) and oxygen were studied in situ with a quadruple mass spectrometer (QMS) and a quartz crystal microbalance (QCM). In addition, QMS was used to study ALD of platinum from (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe 3 ) and oxygen. The QMS studies showed that the reaction by-products H 2 O and CO 2 were released during both the oxygen and the metal precursor pulses. Adsorbed oxygen layer on the metal surface thus oxidizes part of the ligands during the metal precursor pulse. The remaining ligand species become oxidized and a new layer of adsorbed oxygen forms on the surface during the following oxygen pulse. The QCM analysis of the ruthenium process showed a mass decrease during the RuCp 2 pulse and a mass increase during the oxygen pulse, which further supports the proposed mechanism.
226 citations
Patent•
17 Apr 2012
TL;DR: In this article, a hybrid deposition process of CVD and ALD, called nano-layer deposition (NLD), is provided, which is a cyclic sequential deposition process, including introducing a first plurality of precursors to deposit a thin film and introducing a second plurality to modify the deposited thin film.
Abstract: A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, including introducing a first plurality of precursors to deposit a thin film and introducing a second plurality of precursors to modify the deposited thin film. The deposition using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film, including treatments such as modification of film composition and doping or removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.
226 citations
Patent•
13 Oct 2000
TL;DR: In this article, a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate, is described.
Abstract: The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers within integrated circuits.
226 citations
Patent•
30 Sep 1998TL;DR: In this article, a metal interconnection is fabricated in a contact hole of a semiconductor device to reduce the contact resistance and improve the step coverage of the interconnection, and an ALD (atomic layer deposition)-metal barrier layer is formed on the protective layer.
Abstract: A method and an apparatus of fabricating a metal interconnection in a contact hole of a semiconductor device reduces contact resistance and improves step coverage. A contact hole is opened in an interlayer insulating film formed on a semiconductor substrate. A conductive layer used as an ohmic contact layer is formed on the interlayer insulating film including the contact hole. An upper surface of the conductive layer is nitrided to form a protective layer. An ALD (atomic layer deposition)-metal barrier layer is formed on the protective layer. The resulting metal barrier layer has good step coverage and no impurities, and the protective layer prevents defects in the conductive layer caused by precursor impurities used during the formation of the metal barrier layer.
226 citations
Patent•
05 Jun 2001
TL;DR: An atomic layer deposition (ALD) thin film deposition apparatus including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for supplying a first reactive gas to the reactor, a second reactive gas supply component for supplying another reactive gas at the reactor and an exhaust line for exhausting the gas from the reactor is described in this article.
Abstract: An atomic layer deposition (ALD) thin film deposition apparatus including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for supplying a first reaction gas to the reactor, a second reaction gas supply portion for supplying a second reaction gas to the reactor, a first reaction gas supply line for connecting the first reaction gas supply portion to the reactor, a second reaction gas supply line for connecting the second reaction gas supply portion to the reactor, a first inert gas supply line for supplying an inert gas from an inert gas supply source to the first reaction gas supply line, a second inert gas supply line for supplying the inert gas from the inert gas supply source to the second reaction gas supply line, and an exhaust line for exhausting the gas from the reactor.
226 citations