Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
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TL;DR: In this article, polycrystalline monoclinic HfO2 films were atomic layer deposited on Si(100) substrates by a nonhydrous carbon-free process of HfI4 and O2.
Abstract: Polycrystalline monoclinic HfO2 films were atomic layer deposited on Si(100) substrates by a nonhydrous carbon-free process of HfI4 and O2. The oxygen to hafnium ratio corresponded to the stoichiometric dioxide within the limits of accuracy of ion beam analysis. A 1.5–2.0 nm thick SiO2 interface layer formed between the HfO2 films and Si substrates. Hysteresis of the capacitance–voltage curves was observed in Al/HfO2/p-Si(100) structures with oxide grown in the substrate temperature range of 570–755 °C. The hysteresis ceased with an increase in O2 pressure. The effective permittivity of the dielectric layers varied between 12 and 16. The breakdown voltages were found to be lower in the case of higher oxygen doses and higher HfO2 deposition temperatures.
224 citations
TL;DR: In this paper, an energetic model was proposed to explain the different growth behaviors with different precursors and density functional theory (DFT) calculation was made to find the intermediate product stability.
Abstract: Atomic layer deposition (ALD) of TiO2 thin films using Ti isopropoxide and tetrakis-dimethyl-amido titanium (TDMAT) as two kinds of Ti precursors and water as another reactant was investigated. TiO2 films with high purity can be grown in a self-limited ALD growth mode by using either Ti isopropoxide or TDMAT as Ti precursors. Different growth behaviors as a function of deposition temperature were observed. A typical growth rate curve-increased growth rate per cycle (GPC) with increasing temperatures was observed for the TiO2 film deposited by Ti isopropoxide and H2O, while surprisingly high GPC was observed at low temperatures for the TiO2 film deposited by TDMAT and H2O. An energetic model was proposed to explain the different growth behaviors with different precursors. Density functional theory (DFT) calculation was made. The GPC in the low temperature region is determined by the reaction energy barrier. From the experimental results and DFT calculation, we found that the intermediate product stability ...
224 citations
Patent•
15 May 2001TL;DR: In this article, a metal oxide thin film is deposited on a substrate surface and reduced thereafter essentially into a metallic form with an organic reducing agent using a metal source chemical and an oxygen source chemical.
Abstract: This invention relates to manufacturing of integrated circuits (ICs) and especially conductive layers suitable for use in an IC. According to the preferred method a metal oxide thin film is deposited on a substrate surface and reduced thereafter essentially into a metallic form with an organic reducing agent. The metal oxide is preferably deposited according to the principles of atomic layer deposition (ALD) using a metal source chemical and an oxygen source chemical. The reduction step is preferably carried out in an ALD reactor using one or more vaporized organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO and —COOH.
224 citations
TL;DR: Through selective passivation of the defects by atomic layer deposition (ALD) an enhanced corrosion protection of more than 99% was achieved, which compares favorably with commercial corrosion protection methods.
Abstract: Graphene is expected to enable superior corrosion protection due to its impermeability and chemical inertness. Previous reports, however, demonstrate limited corrosion inhibition and even corrosion enhancement of graphene on metal surfaces. To enable the reliable and complete passivation, the origin of the low inhibition efficiency of graphene was investigated. Combining electrochemical and morphological characterization techniques, nanometer-sized structural defects in chemical vapor deposition grown graphene were found to be the cause for the limited passivation effect. Extremely fast mass transport on the order of meters per second both across and parallel to graphene layers results in an inhibition efficiency of only ∼50% for Cu covered with up to three graphene layers. Through selective passivation of the defects by atomic layer deposition (ALD) an enhanced corrosion protection of more than 99% was achieved, which compares favorably with commercial corrosion protection methods.
223 citations
Patent•
14 Nov 2003TL;DR: In this article, the mixture of alternating doses of cobalt(II) bis(N,N'-diisopropylacetamidinate) vapor and hydrogen gas was used to create a very uniform thickness and excellent step coverage in narrow holes.
Abstract: Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN'-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates by the reaction of alternating doses of cobalt(II) bis(N,N'-diisopropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.
223 citations