Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
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217 citations
Patent•
08 Jun 2006
TL;DR: In this paper, a cyclopentadienyl ligand was used for chemical vapour deposition of hafnium oxide or zirconium oxide, and the general formula (I): (R1Cp)2MR2 R3) was proposed.
Abstract: Precursors suitable for chemical vapour deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula (I): (R1Cp)2MR2 R3 wherein Cp represents a cyclopentadienyl ligand, R1 is H or a substituting alkyl group, alkoxy group or amido group of the Cp ligand, R2 and R3 is an alkyl group, an alkoxy group or an amido group and M is hafnium or zirconium.
216 citations
Patent•
27 Oct 2009TL;DR: In this article, a method for deposition of titanium aluminum nitride materials during a vapor deposition process, such as atomic layer deposition (ALD) or plasma-enhanced ALD (PE-ALD), is described.
Abstract: Embodiments provide a method for depositing or forming titanium aluminum nitride materials during a vapor deposition process, such as atomic layer deposition (ALD) or plasma-enhanced ALD (PE-ALD). In some embodiments, a titanium aluminum nitride material is formed by sequentially exposing a substrate to a titanium precursor and a nitrogen plasma to form a titanium nitride layer, exposing the titanium nitride layer to a plasma treatment process, and exposing the titanium nitride layer to an aluminum precursor while depositing an aluminum layer thereon. The process may be repeated multiple times to deposit a plurality of titanium nitride and aluminum layers. Subsequently, the substrate may be annealed to form the titanium aluminum nitride material from the plurality of layers. In other embodiments, the titanium aluminum nitride material may be formed by sequentially exposing the substrate to the nitrogen plasma and a deposition gas which contains the titanium and aluminum precursors.
216 citations
TL;DR: In this paper, thin films of tungsten (W) and Tungsten nitride (W 2 N) were grown with atomic layer control using sequential surface reactions, achieving a deposition rate of 2.5 A/AB cycle for WF 6 and Si 2 H 6 reactant exposures >800 and 3000 L, respectively.
216 citations
Patent•
14 Nov 2006TL;DR: In this article, a silicon dioxide atomic layer deposition method with pyridine as a catalyst was proposed. But the method was limited to silicon dioxide and water was used as oxidization source while depositing at low temperature.
Abstract: The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the substrate may be exposed to a pyridine soak process. Additionally, the water may be co-flowed to the chamber with the pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine.
215 citations