Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.

Controlled Growth of TaN, Ta3N5, and TaOxNy Thin Films by Atomic Layer Deposition

Abstract: TaN, Ta3N5, and TaOxNy films were deposited by the atomic layer deposition technique. The alternate surface reactions between TaCl5 and NH3 resulted in Ta3N5 films, but when elemental zinc, serving as an additional reducing agent, was supplied on the substrates between the TaCl5 and NH3 pulses, TaN with a resistivity of 9 × 10-4 Ω cm was obtained. TaOxNy films were grown by depositing first thin Ta3N5 layers which were then partially oxidized by single water pulses. By varying the number of the Ta3N5 deposition cycles between the water pulses, the oxygen-to-nitrogen ratio of the films was controlled. The permittivity of the TaOxNy films was around 30 which is somewhat higher than that of Ta2O5.

ALD and Characterization of Aluminum Oxide Deposited on Si ( 100 ) using Tris(diethylamino) Aluminum and Water Vapor

Abstract: © The Electrochemical Society, Inc. 2006. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Katamreddy, R., R. Inman, G. Jursich, A. Soulet, and C. Takoudis, 2006, ALD and characterization of aluminum oxide deposited on Si (100) using tris(diethylamino) aluminum and water vapor: Journal of the Electrochemical Society, v. 153, no. 10, p. C701-C706.

Massively parallel atomic layer deposition/chemical vapor deposition system

Abstract: A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.

Ald of silicon films on germanium

Abstract: The use of atomic layer deposition (ALD) to form a semiconductor structure of a silicon film on a germanium substrate is disclosed. An embodiment includes a tantalum nitride gate electrode on a hafnium dioxide gate dielectric on the silicon film (TaN/HfO2/Si/Ge), which produces a reliable high dielectric constant (high k) electronic structure having higher charge carrier mobility as compared to silicon substrates. This structure may be useful in high performance electronic devices. The structure is formed by ALD deposition of a thin silicon layer on a germanium substrate surface, and then ALD forming a hafnium oxide gate dielectric layer, and a tantalum nitride gate electrode. Such a structure may be used as the gate of a MOSFET, or as a capacitor. The properties of the dielectric may be varied by replacing the hafnium oxide with another gate dielectric such as zirconium oxide (ZrO2), or titanium oxide (TiO2).

Chemical vapor deposition and atomic layer deposition for advanced lithium ion batteries and supercapacitors

Abstract: Applications of the non-line-of-sight vapor deposition techniques, such as chemical vapor deposition (CVD) and atomic layer deposition (ALD), offer unique opportunities to produce well-defined high surface area current collectors, thin films or various nanostructures of active (ion-storage) materials, protective coatings, solid electrolytes and improved separators. These features hold significant promise for solving emerging issues in advanced LiBs and supercapacitors. This paper reviews recent developments and applications of CVD and ALD for these energy storage devices, providing selected examples and outlining critical challenges for further exploration.