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Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.


Papers
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Journal ArticleDOI
TL;DR: The results demonstrate that ALD is a viable technique for synthesizing mixed-metal nanostructures suitable for catalysis and other applications.
Abstract: Atomic layer deposition (ALD) is used to deposit ruthenium−platinum nanostructured catalysts using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl) ruthenium, trimethyl(methylcyclopentadienyl) platinum, and oxygen as precursors. Transmission electron microscopy shows discrete 1.2 nm nanoparticles decorating the surface of the spherical alumina support. The Ru−Pt particles are crystalline and have a crystal structure similar to pure platinum. X-ray fluorescence measurements show that the nanoparticle composition is controlled by the ratio of metal precursor ALD cycles. X-ray absorption spectroscopy at the Ru K-edge indicates a nearest neighbor Ru−Pt interaction consistent with a bimetallic composition. Methanol decomposition reactions further confirm a Ru−Pt interaction and show enhanced methanol conversion for the bimetallic nanoparticles when compared to catalysts comprised of a mixture of pure Pt and Ru nanoparticles of similar loading. These results demonstrate that ALD is a viable technique for synthe...

206 citations

Journal ArticleDOI
TL;DR: In this paper, an effective stacked memory concept utilizing all-oxide-based device components for future high-density nonvolatile stacked structure data storage is developed, where GaInZnO (GIZO) thin-film transistors, grown at room temperature, are integrated with one-diode (CuO/InXnO) and one-resistor (NiO) (1D-1R) structure oxide storage node elements.
Abstract: An effective stacked memory concept utilizing all-oxide-based device components for future high-density nonvolatile stacked structure data storage is developed. GaInZnO (GIZO) thin-film transistors, grown at room temperature, are integrated with one-diode (CuO/InZnO)–one-resistor (NiO) (1D–1R) structure oxide storage node elements, fabricated at room temperature. The low growth temperatures and fabrication methods introduced in this paper allow the demonstration of a stackable memory array as well as integrated device characteristics. Benefits provided by low-temperature processes are demonstrated by fabrication of working devices over glass substrates. Here, the device characteristics of each individual component as well as the characteristics of a combined select transistor with a 1D–1R cell are reported. X-ray photoelectron spectroscopy analysis of a NiO resistance layer deposited by sputter and atomic layer deposition confirms the importance of metallic Ni content in NiO for bi-stable resistance switching. The GIZO transistor shows a field-effect mobility of 30 cm2 V−1 s−1, a Vth of +1.2 V, and a drain current on/off ratio of up to 108, while the CuO/InZnO heterojunction oxide diode has forward current densities of 2 × 104 A cm−2. Both of these materials show the performance of state-of-the-art oxide devices.

206 citations

Patent
Yanjun Ma1, Yoshi Ono1
08 Feb 2001
TL;DR: In this paper, a multilayer dielectric stack is provided which has alternating layers of a high-k material and an interposing material, which reduces the effects of crystalline structures within individual layers.
Abstract: A multilayer dielectric stack is provided which has alternating layers of a high-k material and an interposing material. The presence of the interposing material and the thinness of the high-k material layers reduces or eliminate effects of crystallization within the high-k material, even at relatively high annealing temperatures. The high-k dielectric layers are a metal oxide of preferably zirconium or hafnium. The interposing layers are preferably amorphous aluminum oxide, aluminum nitride, or silicon nitride. Because the layers reduce the effects of crystalline structures within individual layers, the overall tunneling current is reduced. Also provided are atomic layer deposition, sputtering, and evaporation as methods of depositing desired materials for forming the above-mentioned multilayer dielectric stack.

205 citations

Patent
16 Nov 2006
TL;DR: In this article, an enhanced sequential atomic layer deposition (ALD) technique was proposed for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high-k films, and other conductive, semi-conductive, and nonconductive films.
Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

205 citations

Journal ArticleDOI
TL;DR: It was shown that annealing at 800 °C substantially improves the water oxidation efficiency of the ultrathin film hematite electrodes, and the effect of high temperature treatment is shown to remove one of two surface states identified, which reduces recombination and Fermi level pinning.
Abstract: Hematite (α-Fe2O3) thin film electrodes prepared by atomic layer deposition (ALD) were employed to photocatalytically oxidize water under 1 sun illumination. It was shown that annealing at 800 °C substantially improves the water oxidation efficiency of the ultrathin film hematite electrodes. The effect of high temperature treatment is shown to remove one of two surface states identified, which reduces recombination and Fermi level pinning. Further modification with Co–Pi water oxidation catalyst resulted in unprecedented photocurrent onset potential of ∼0.6 V versus reversible hydrogen electrode (RHE; slightly positive of the flat band potential).

205 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023542
20221,013
20211,032
20201,269
20191,298
20181,322