Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.

Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications

Abstract: We report a method for depositing patterned dielectric layers with submicron features using atomic layer deposition. The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and minimum feature size. Films were deposited at 100–150 °C using several different precursors and patterned using either electron-beam or photoresist. The low deposition temperature permits uniform film growth without significant outgassing or hardbaking of resist layers. A lift-off technique presented here gives sharp step edges with edge roughness as low as ∼10 nm. We also measure dielectric constants (κ) and breakdown fields for the high-κ materials aluminum oxide (κ∼8–9), hafnium oxide (κ∼16–19), and zirconium oxide (κ∼20–29), grown under similar low temperature conditions.

Conformal doping via plasma activated atomic layer deposition and conformal film deposition

Abstract: Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.

Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species

Abstract: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide

Abstract: A brief survey of the precursors used for the chemical vapour deposition of the dioxides of titanium, zirconium and hafnium is presented. The review covers precursors used for the closely related process known as atomic layer chemical vapour deposition (ALCVD or ALD). Precursors delivered by standard carrier gas transport and by direct liquid injection (DLI) methods are included. The complexes fall into four classes based upon the ligands: halides, alkoxides, acetylacetonates (acac) and nitrates. Compounds bearing a mixture of ligand types have also found application in this area. The impact of the ligand on the microstructure of the metal oxide film is greatest at lower temperatures where the deposition rate is limited by the surface reactivity. The first use of anhydrous hafnium nitrate, Hf(NO3)4, to deposit films of hafnium oxide on silicon is reported. The films are characterized by Rutherford backscattering and X-ray photoelectron spectroscopy, X-ray diffraction and transmission electron microscopy. Copyright © 2000 John Wiley & Sons, Ltd.