Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
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TL;DR: In this paper, the effect of nanoscale pinholes in compact TiO2 layers on the device performance was investigated, and it was shown that the ALD-based layer acts as an efficient hole-blocking layer in perovskite solar cells; it offers a large shunt resistance and enables a high power conversion efficiency.
Abstract: A uniform and pinhole-free hole-blocking layer is necessary for high-performance perovskite-based thin-film solar cells. In this study, we investigated the effect of nanoscale pinholes in compact TiO2 layers on the device performance. Surface morphology and film resistance studies show that TiO2 compact layers fabricated using atomic layer deposition (ALD) contain a much lower density of nanoscale pinholes than layers obtained by spin coating and spray pyrolysis methods. The ALD-based TiO2 layer acts as an efficient hole-blocking layer in perovskite solar cells; it offers a large shunt resistance and enables a high power conversion efficiency of 12.56%.
202 citations
TL;DR: In this article, the performance of Al2O3 atomic layer deposition (ALD) coatings for LiCoO2/natural graphite (LCO/NG) batteries is investigated, where various permutations of the electrodes are coated in a full battery.
Abstract: The performance of Al2O3 atomic layer deposition (ALD) coatings for LiCoO2/natural graphite (LCO/NG) batteries is investigated, where various permutations of the electrodes are coated in a full battery. Coating both electrodes with ∼1 nm of alumina as well as coating only the LCO (positive electrode) enables improved performance when cycling at high voltage, where the LCO is known to degrade. However, we found that coating only the NG (negative electrode) also improves the performance of the whole battery when cycling at high voltage. Under these conditions, the uncoated LCO (positive electrode) should degrade quickly, and the NG should be unaffected. A variety of characterization techniques show the surface reactions that occur on the negative electrode and positive electrode are related, resulting in the enhanced performance of the uncoated LCO.
202 citations
TL;DR: Al 2 O 3 thin films were grown on highly-doped p-Si (100) macro-and mesoporous structures by atomic layer deposition (ALD) using trimethylaluminum (TMA) and water H 2 O as precursors at 300°C as discussed by the authors.
201 citations
Patent•
26 Jul 2007TL;DR: In this article, a method of forming a metallic oxide film using atomic layer deposition is described, which involves loading a substrate into a reactor, supplying a metallic source gas into the reactor and absorbing the metallic source's gas onto the substrate, purging the remaining metallic source gases that does not react, with the substrate and directly producing plasma of an N-group-containing oxide reactant gas in the reactor.
Abstract: A method of forming a metallic oxide film using atomic layer deposition includes loading a substrate into a reactor, supplying a metallic source gas into the reactor and absorbing the metallic source gas onto the substrate, purging the remaining metallic source gas that does not react, with the substrate, and directly producing plasma of an N-group-containing oxide reactant gas in the reactor.
201 citations
Patent•
12 May 2000
TL;DR: In this article, an improved ALD apparatus is disclosed as having multiple deposition regions in which individual monolayer species are deposited on a substrate under different processing conditions in each region, each deposition region is chemically separated from an adjacent deposition region.
Abstract: An improved ALD apparatus is disclosed as having multiple deposition regions in which individual monolayer species are deposited on a substrate under different processing conditions in each region. Each deposition region is chemically separated from an adjacent deposition region. A loading assembly is programmed to follow pre-defined transfer sequences for moving semiconductor substrates into and out of the respective adjacent deposition regions. According to the number of deposition regions provided, a multitude of substrates could be simultaneously processed and run through the cycle of deposition regions until a desired thickness of deposited solid film is obtained.
200 citations