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Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the authors demonstrate high performance, air-stable, low-temperature processed (≤100 °C) perovskite solar cells by the applications of atomic layer deposition (ALD) technology to deposit ZnO and Al2O3 films as cathode buffer layer (CBL) and encapsulation layer, respectively.
Abstract: We demonstrate high-performance, air-stable, low-temperature processed (≤100 °C) semitransparent (ST) perovskite solar cells (PSCs) by the applications of atomic layer deposition (ALD) technology to deposit ZnO and Al2O3 films as cathode buffer layer (CBL) and encapsulation layer, respectively. The application of ALD ZnO film as CBL in PSCs delivers several remarkable features, including fine-tunability of the work function of the electrode, low deposition temperature (80 °C), high charge selectivity, good electron-transporting ability (filed-effect mobility = 16.1 cm2 V–1 s–1), and excellent film coverage. With these desired interfacial properties, the device with opaque Ag electrode delivers high power conversion efficiency (PCE) up to 16.5%, greatly outperforming the device with state-of-the-art CBL ZnO nanoparticles film (10.8%). For ST PSCs employing Ag nanowires as transparent top electrode, a remarkable PCE of 10.8% with a corresponding average visible transmittance (AVT) of 25.5% is demonstrated, ...

199 citations

Patent
19 Feb 2014
TL;DR: In this article, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursors and the precursor adsorb on the substrate surface.
Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

199 citations

Journal ArticleDOI
TL;DR: By noncovalent functionalization of SWNTs with poly-T DNA molecules (dT40-DNA), one can impart functional groups of sufficient density and stability for uniform and conformal ALD of high kappa dielectrics on SW NTs with thickness down to 2-3 nm, which enables approaching the ultimate vertical scaling limit of nanotube FETs and reliably achieving S approximately 60 mV/decade at room temperature.
Abstract: For single-walled carbon nanotube (SWNT) field effect transistors, vertical scaling of high κ dielectrics by atomic layer deposition (ALD) currently stands at ∼8 nm with a subthreshold swing S ≈ 70−90 mV/decade at room temperature. ALD on as-grown pristine SWNTs is incapable of producing a uniform and conformal dielectric layer due to the lack of functional groups on nanotubes and because nucleation of an oxide dielectric layer in the ALD process hinges upon covalent chemisorption on reactive groups on surfaces. Here, we show that by noncovalent functionalization of SWNTs with poly-T DNA molecules (dT40-DNA), one can impart functional groups of sufficient density and stability for uniform and conformal ALD of high κ dielectrics on SWNTs with thickness down to 2−3 nm. This enables approaching the ultimate vertical scaling limit of nanotube FETs and reliably achieving S ≈ 60 mV/decade at room temperature, and S ≈ 50 mV/decade in the band-to-band tunneling regime of ambipolar transport. We have also carried ...

199 citations

Patent
21 Jun 2007
TL;DR: In this paper, the atomic layer deposition (ALD) and pulsed chemical vapor deposition (CVD) are used to create nanolaminate films, which are then used for nanolamination.
Abstract: Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant. In some embodiments, the pulses of the third reactant at separated by a duration at least about 1.75 times the length of the pulse. Preferably, less than about 8 monolayers of material are deposited per pulse of the first CVD reactant.

199 citations

Journal ArticleDOI
TL;DR: In this article, the material properties and c-Si surface passivation have been investigated for Al 2 O 3 films deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) for temperatures between 25 and 400°C.
Abstract: The material properties and c-Si surface passivation have been investigated for Al 2 O 3 films deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) for temperatures (T dep ) between 25 and 400°C. Optimal surface passivation by ALD Al 2 O 3 was achieved at T dep = 150-250°C with S eff < 3 cm/s for ∼2 Ω cm p-type c-Si. PECVD Al 2 O 3 provided a comparable high level of passivation for T dep = 150-300°C and contained a high fixed negative charge density of ∼6 x 10 12 cm -2 . Outstanding surface passivation performance was therefore obtained for thermal ALD, plasma ALD, and PECVD for a relatively wide range of Al 2 O 3 material properties.

199 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023542
20221,013
20211,032
20201,269
20191,298
20181,322