Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
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Patent•
18 Aug 2003
TL;DR: In this paper, the atomic layer deposition (ALD) of high k dielectric layers of metal silicates, including hafnium silicate, has been studied, and the present paper relates to the ALD formation of metal-silicate using metal organic precursors, silicon organic precurors and ozone.
Abstract: The present invention relates to the atomic layer deposition ('ALD') of high k dielectric layers of metal silicates, including hafnium silicate. More particularly, the present invention relates to the ALD formation of metal silicates using metal organic precursors, silicon organic precursors and ozone. Preferably, the metal organic precursor is a metal alkyl amide and the silicon organic precursor is a silicon alkyl amide.
196 citations
TL;DR: Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing high quality, uniform and conformal thin films at relatively low temperatures, which can be employed to face processing challenges for various types of next-generation solar cells; hence, ALD has attracted great interest in academic and industrial research in recent years as discussed by the authors.
Abstract: Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing high quality, uniform and conformal thin films at relatively low temperatures. These outstanding properties can be employed to face processing challenges for various types of next-generation solar cells; hence, ALD for photovoltaics (PV) has attracted great interest in academic and industrial research in recent years. In this review, the recent progress of ALD layers applied to various solar cell concepts and their future prospects are discussed. Crystalline silicon (c-Si), copper indium gallium selenide (CIGS) and dye-sensitized solar cells (DSSCs) benefit from the application of ALD surface passivation layers, buffer layers and barrier layers, respectively. ALD films are also excellent moisture permeation barriers that have been successfully used to encapsulate flexible CIGS and organic photovoltaic (OPV) cells. Furthermore, some emerging applications of the ALD method in solar cell research are reviewed. The potential of ALD for solar cells manufacturing is discussed, and the current status of high-throughput ALD equipment development is presented. ALD is on the verge of being introduced in the PV industry and it is expected that it will be part of the standard solar cell manufacturing equipment in the near future.
196 citations
Patent•
07 Jun 2007
TL;DR: In this article, a gas supply device is arranged to provide a gas mixture with a precursor material to the treatment space for allowing reactive surface sites to react with precursor material molecules to give a surface covered by a monolayer of precursor molecules attached via the reactive sites to the surface of the substrate.
Abstract: Apparatus and method for atomic layer deposition on a surface of a substrate (6) in a treatment space. A gas supply device (15, 16) is present for providing various gas mixtures to the treatment space. The gas supply device (15, 16) is arranged to provide a gas mixture with a precursor material to the treatment space for allowing reactive surface sites to react with precursor material molecules to give a surface covered by a monolayer of precursor molecules attached via the reactive sites to the surface of the substrate. Subsequently, a gas mixture comprising a reactive agent capable to convert the attached precursor molecules to active precursor sites is provided. A plasma generator (10) is present for generating an atmospheric pressure plasma in the gas mixture comprising the reactive agent.
196 citations
Patent•
14 Mar 2007TL;DR: In this article, a distribution manifold for thin-film material deposition onto a substrate is proposed, comprising a plurality of inlet ports for a sequence of gaseous materials, and an output face comprising of open elongated output channels, each channel extending in a length direction substantially in parallel.
Abstract: The present invention provides a distribution manifold (10) for thin-film material deposition onto a substrate (20) comprising a plurality of inlet ports (18) for a sequence of gaseous materials, an output face comprising a plurality of open elongated output channels (12), each channel extending in a length direction substantially in parallel. The distribution manifold (10) can be employed in a deposition system for thin film deposition, further comprising a plurality of sources for a plurality of gaseous materials and a support for positioning a substrate in pre-designed close proximity to the output face of the distribution manifold (10). During operation of the system, relative movement between the output face and the substrate support is accomplished.
196 citations
TL;DR: In this article, thin tantalum oxide films were deposited using atomic layer deposition from TaCl5 and H2O at temperatures in the range 80-500 °C, and the films were predominantly amorphous, whereas those grown at higher temperatures were polycrystalline containing the phases TaO2 and Ta2O5.
195 citations