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Atomic layer deposition

About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.


Papers
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Journal ArticleDOI
TL;DR: In this article, the atomic layer deposition of alumina using water and trimethylaluminum is investigated using the density functional theory, and the atomistic mechanisms of the two deposition half-cycles on Al-CH3* and Al-OH* surface sites are investigated.
Abstract: The atomic layer deposition of alumina using water and trimethylaluminum is investigated using the density functional theory. The atomistic mechanisms of the two deposition half-cycles on Al–CH3* and Al–OH* surface sites are investigated. Both half-cycle reactions proceed through the formation of an Al–O Lewis acid-base complex followed by CH4 formation. The Al–O complexes are relatively stable, with formation energies between 0.57 and 0.74 eV. The CH4 formation activation energies range from 0.52 to 0.91 eV and both half-cycle reactions are exothermic with overall enthalpies of reaction between 1.30 and 1.70 eV.

190 citations

Patent
19 Dec 2008
TL;DR: In this article, methods for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD are described, by using disilane compounds as the silicon source, good deposition rates and uniformity are obtained.
Abstract: Methods are provided for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD. By using disilane compounds as the silicon source, good deposition rates and uniformity are obtained.

190 citations

Patent
25 Apr 2005
TL;DR: In this article, a method for selective ALD of ZnO on a wafer preparing a silicon wafer was proposed, where the blocking agent is taken from a group of blocking agents including isopropyl alcohol, acetone and deionized water.
Abstract: A method for selective ALD of ZnO on a wafer preparing a silicon wafer; patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents includes isopropyl alcohol, acetone and deionized water; depositing a layer of ZnO on the wafer by ALD using diethyl zinc and H 2 O at a temperature of between about 140° C. to 170° C.; and removing the blocking agent from the wafer.

190 citations

Journal ArticleDOI
TL;DR: In this paper, the nucleation and growth during tungsten (W) atomic layer deposition (ALD) on SiO2 surfaces was examined using Auger electron spectroscopy (AES) techniques.

190 citations

Journal ArticleDOI
TL;DR: In this paper, tetrakis(ethylmethylamino)hafnium (TEMAH) and ozone (O 3 ) was used for HfO 2 deposition on 200 mm silicon wafers.
Abstract: Hafnium oxide (HfO 2 ) thin films were deposited from tetrakis(ethylmethylamino)hafnium (TEMAH) and ozone (O 3 ) by atomic layer deposition (ALD) on 200 mm silicon wafers. The O 3 half-reaction shows good saturation behavior. However, gradual surface saturation is observed for the TEMAH half-reaction. Within wafer non-uniformity of less than 1% and step coverage of about 100% were achieved for trenches with aspect ratio of around 40:1. The film thickness increased linearly as the number of cycles increased. From susceptor temperatures of 160-420°C, the lowest deposition rate (A/cycle) and the highest refractive index is observed at 320°C. The atomic ratio of hafnium to oxygen determined by Rutherford backscattering is 1:2.04 for the films deposited at 320°C. The carbon and hydrogen content determined by secondary ion mass spectroscopy (SIMS) decreased as the susceptor temperature increased from 200 to 320°C. Lower carbon and hydrogen levels were obtained in the control films made with H 2 O than the films made with O 3 . A reaction mechanism of the TEMAH + O 3 ALD process is discussed. The results show that an O 3 -based ALD HfO 2 deposition is promising for microelectronic applications.

190 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023542
20221,013
20211,032
20201,269
20191,298
20181,322