Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
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TL;DR: In this paper, both thermal atomic layer deposition (ALD) with H2O and plasma ALD with an O2 plasma, can be used to deposit Al2O3 for a high level of surface passivation of crystalline silicon (c-Si).
Abstract: In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD with an O2 plasma, can be used to deposit Al2O3 for a high level of surface passivation of crystalline silicon (c-Si). For 3.5 Ω cm n-type c-Si, plasma ALD Al2O3 resulted in ultralow surface recombination velocities of Seff 10 nm were required. Thermal stability against a high temperature firing step was demonstrated for ultrathin thermal and plasma ALD Al2O3 films of 5 nm by Seff < 9.2 and < 6.5 cm/s, respectively. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
189 citations
TL;DR: In this article, the critical tensile strain at which the Al2O3 ALD films will crack was determined for both tensile and compressive strains for both compressive and tensile tensors.
Abstract: Al2O3 atomic layer deposition (ALD) is a model ALD system and Al2O3 ALD films are excellent gas diffusion barrier on polymers. However, little is known about the response of Al2O3 ALD films to strain and the potential film cracking that would restrict the utility of gas diffusion barrier films. To understand the mechanical limitations of Al2O3 ALD films, the critical strains at which the Al2O3 ALD films will crack were determined for both tensile and compressive strains. The tensile strain measurements were obtained using a fluorescent tagging technique to image the cracks. The results showed that the critical tensile strain is higher for thinner thicknesses of the Al2O3 ALD film on heat-stabilized polyethylene naphthalate (HSPEN) substrates. A low critical tensile strain of 0.52% was measured for a film thickness of 80 nm. The critical tensile strain increased to 2.4% at a film thickness of 5 nm. In accordance with fracture mechanics modeling, the critical tensile strains and the saturation crack densiti...
189 citations
TL;DR: In this paper, an atomic layer deposition (ALD) technology was used to fabricate a new class of CdS@ZnO core-shell heterostructure, which not only allows the light to be absorbed by Cdc core, but also provides an intimate heterojunction interface between ZnO shell and CcS core.
188 citations
TL;DR: In this paper, the authors showed that the nucleation of Al2O3 atomic layer deposition (ALD) on the LDPE particles occurred primarily via adsorption of Al(CH3)3 onto the surface of the polyethylene (LDPE) particle or absorption of Al3) into the polyylene particle followed by the reaction with H2O.
Abstract: Sequential exposures of Al(CH3)3 and H2O at 77 °C were used to encapsulate low-density polyethylene (LDPE) particles with an ultrathin Al2O3 film. FTIR studies revealed that the nucleation of Al2O3 atomic layer deposition (ALD) on the LDPE particles occurred primarily via adsorption of Al(CH3)3 onto the LDPE surface or absorption of Al(CH3)3 into the LDPE particle followed by the reaction with H2O. The FTIR spectra then revealed the progressive switching between AlCH3* and AlOH* species with alternating exposure to Al(CH3)3 and H2O. This nucleation of Al2O3 ALD did not require the existence of specific chemical functional groups on the polymer. The FTIR spectra also demonstrated that the sequential exposures of Al(CH3)3 and H2O led to an increase in Al2O3 bulk vibrational modes. The increase of the absorbance for the Al2O3 bulk vibrational modes was linear with the number of AB cycles. The presence of an Al2O3 film on the LDPE particles was confirmed using transmission electron microscopy (TEM). The TEM i...
188 citations
TL;DR: Improvements were mainly attributed to the decreased coercive field (by ∼30% compared to the undoped film), which allowed for the use of a lower applied field to drive the cycling tests while maintaining a high polarization value, and La doping decreased the leakage current by ∼3 orders of magnitude.
Abstract: Hf0.5Zr0.5O2 thin films are one of the most appealing HfO2-based ferroelectric thin films, which have been researched extensively for their applications in ferroelectric memory devices. In this work, a 1 mol % La-doped Hf0.5Zr0.5O2 thin film was grown by plasma-assisted atomic layer deposition and annealed at temperatures of 450 and 500 °C to crystallize the film into the desired orthorhombic phase. Despite the use of a lower temperature than that used in previous reports, the film showed highly promising ferroelectric properties—a remnant polarization of ∼30 μC/cm2 and switching cycle endurance up to 4 × 1010. The performance was much better than that of undoped Hf0.5Zr0.5O2 thin films, demonstrating the positive influence of La doping. Such improvements were mainly attributed to the decreased coercive field (by ∼30% compared to the undoped film), which allowed for the use of a lower applied field to drive the cycling tests while maintaining a high polarization value. La doping also decreased the leakage...
187 citations