Topic
Atomic layer deposition
About: Atomic layer deposition is a research topic. Over the lifetime, 19821 publications have been published within this topic receiving 477332 citations. The topic is also known as: ALD.
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TL;DR: SiO2 thin films were deposited with atomic layer control using self-limiting surface reactions as discussed by the authors, which was achieved by separating the binary reaction SiCl4+2H2O→ SiO2+4HCl into two half-re...
Abstract: SiO2 thin films were deposited with atomic layer control using self-limiting surface reactions. The SiO2 growth was achieved by separating the binary reaction SiCl4+2H2O→ SiO2+4HCl into two half-re...
181 citations
Patent•
06 Aug 2001
TL;DR: In this paper, a plasma enhanced atomic layer deposition (PEALD) apparatus and a method of forming a conductive thin film using the same are disclosed, and a uniquely designed showerhead assembly provides not only reducing the volume of the reactor space, but also allowing the process gases to flow uniformly, evenly and smoothly throughout the reation space area and reducing the reaction space, and the smaller volume makes it easier and fast to change process gases for sequential and repeated process operation.
Abstract: A plasma enhanced atomic layer deposition (PEALD) apparatus and a method of forming a conductive thin film using the same are disclosed. According to the present invention of a PEALD apparatus and a method, a process gas inlet tube and a process gas outlet tube are installed symmetrically and concentrically with respect to a substrate, thereby allowing the process gas to flow uniformly, evenly and smoothly over the substrate, thereby forming a thin film uniformly over the substrate. A uniquely designed showerhead assembly provides not only reduces the volume of the reactor space, but also allows the process gases to flow uniformly, evenly and smoothly throughout the reation space area and reduces the volume of the reaction space, and the smaller volume makes it easier and fast to change the process gases for sequential and repeated process operation.
181 citations
TL;DR: Li et al. as mentioned in this paper proposed a 3D carbon nanotube sponge (CNTS) as a Li deposition host, which enables homogenous charge distribution for Li nucleation and minimizes the effective current density to overcome dendrite growth.
Abstract: Lithium metal is considered the ideal anode material for Li-ion-based batteries because it exhibits the highest specific capacity and lowest redox potential for this type of cells. However, growth of Li dendrites, unstable solid electrolyte interphases, low Coulombic efficiencies, and safety hazards have significantly hindered the practical application of metallic Li anodes. Herein, we propose a three-dimensional (3D) carbon nanotube sponge (CNTS) as a Li deposition host. The high specific surface area of the CNTS enables homogenous charge distribution for Li nucleation and minimizes the effective current density to overcome dendrite growth. An additional conformal Al2O3 layer on the CNTS coated by atomic layer deposition (ALD) robustly protects the Li metal electrode/electrolyte interface due to the good chemical stability and high mechanical strength of the layer. The Li@ALD-CNTS electrode exhibits stable voltage profiles with a small overpotential ranging from 16 to 30 mV over 100 h of cycling at 1.0 mA·cm–2. Moreover, the electrodes display a dendrite-free morphology after cycling and a Coulombic efficiency of 92.4% over 80 cycles at 1.0 mA·cm–2 in an organic carbonate electrolyte, thus demonstrating electrochemical stability superior to that of planar current collectors. Our results provide an important strategy for the rational design of current collectors to obtain stable Li metal anodes.
181 citations
Patent•
23 Jul 2008TL;DR: In this paper, the authors described a process for depositing a silicon oxide film using a mixture of atomic layer deposition (ALD) and chemical vapor deposition (CVD), which is a pulsed hybrid method between ALD and CVD.
Abstract: Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.
180 citations
Patent•
26 Mar 2002
TL;DR: In this paper, a chemical vapor deposition method is used to generate a reactive precursor for use with a reactive component in semiconductor processing, including valve assemblies, and a first deposition precursor is fed to a remote plasma generation chamber.
Abstract: The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.
180 citations