scispace - formally typeset
Search or ask a question
Topic

Ballistic conduction

About: Ballistic conduction is a research topic. Over the lifetime, 3813 publications have been published within this topic receiving 114123 citations.


Papers
More filters
Journal ArticleDOI
TL;DR: The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
Abstract: Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

1,568 citations

Journal ArticleDOI
TL;DR: It is shown that a relatively slow electron flow should be unstable because of plasma wave amplification due to the reflection from the device boundaries, which provides a new mechanism for the generation of tunable far infrared electromagnetic radiation.
Abstract: We demonstrate that electrons in a ballistic field effect transistor behave as a fluid similar to shallow water. Phenomena similar to wave and soliton propagation, hydraulic jump, and others should take place in this electron fluid. We show that a relatively slow electron flow should be unstable because of plasma wave amplification due to the reflection from the device boundaries. This provides a new mechanism for the generation of tunable far infrared electromagnetic radiation.

1,074 citations

Book ChapterDOI
TL;DR: In this article, the authors describe the properties of Si-inversion layers in GaAs-AlGaAs Heterostructures and the Quantum Hall Effect in strong magnetic fields.
Abstract: I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential). III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling). IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and Detection of Edge Channels, Fractional Quantum Hall Effect, Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically Induced Band Structure).

937 citations

Journal ArticleDOI
07 Jun 2001-Nature
TL;DR: This work describes an example of a coherent molecular electronic device whose behaviour is explicitly dependent on quantum interference between propagating electron waves—a Fabry–Perot electron resonator based on individual single-walled carbon nanotubes with near-perfect ohmic contacts to electrodes.
Abstract: The behaviour of traditional electronic devices can be understood in terms of the classical diffusive motion of electrons. As the size of a device becomes comparable to the electron coherence length, however, quantum interference between electron waves becomes increasingly important, leading to dramatic changes in device properties. This classical-to-quantum transition in device behaviour suggests the possibility for nanometer-sized electronic elements that make use of quantum coherence. Molecular electronic devices are promising candidates for realizing such device elements because the electronic motion in molecules is inherently quantum mechanical and it can be modified by well defined chemistry. Here we describe an example of a coherent molecular electronic device whose behaviour is explicitly dependent on quantum interference between propagating electron waves-a Fabry-Perot electron resonator based on individual single-walled carbon nanotubes with near-perfect ohmic contacts to electrodes. In these devices, the nanotubes act as coherent electron waveguides, with the resonant cavity formed between the two nanotube-electrode interfaces. We use a theoretical model based on the multichannel Landauer-Buttiker formalism to analyse the device characteristics and find that coupling between the two propagating modes of the nanotubes caused by electron scattering at the nanotube-electrode interfaces is important.

908 citations

BookDOI
01 Jan 1997
TL;DR: Kouwenhoven et al. as mentioned in this paper introduced the concept of Mesoscopic Electron Transport in Quantum Dots and showed that it can be used to study self-organized quantum dots and quantum Chaology.
Abstract: Preface L.P. Kouwenhoven, et al. Introduction to Mesoscopic Electron Transport L.P. Kouwenhoven, et al. Geometric Phases in Mesoscopic Systems - From the Aharonov-Bohm Effect to Berry Phases A. Stern. Delocalization, Inelastic Scattering and Transport Due to Interactions Y. Imry. Electron Transport in Quantum Dots L.P. Kouwenhoven, et al. Magnetotunneling Spectroscopy: Studying Self-Organized Quantum Dots and Quantum Chaology L. Eaves. Shot Noise in Mesoscopic Systems M.J.M. de Jong, C.W.J. Beenakker. Admittance and Nonlinear Transport in Quantum Wires, Point Contacts, and Resonant Tunneling Barriers M. Buttiker, T. Chirsten. Transport Theory of Interacting Quantum Dots H. Schoeller. Transport in a One-Dimensional Luttinger Liquid M.P.A. Fisher, L.I. Glazman. The Proximity Effect in Mesoscopic Diffusive Conductors D. Esteve, et al. Mesoscopic Effects in Superconductivity R. Fazio, G. Schoen. Ultrasmall Superconductors D.C. Ralph, et al. The Superconducting Proximity Effect in Semiconductor-Superconductor Systems: Ballistic Transport, Low Dimensionality and Sample Specific Properties B.J. van Wees, H. Takayanagi. Scanning Probe Microscopes and Their Applications L.L. Soh, et al. Quantum Point Contacts Between Metals J.M. van Ruitenbeek. Conductance Quantization in Metallic Nanowires N. Garcia, et al. Quantum Optics Y. Yamamoto. Topics in Quantum Computers D.P. DiVincenzo.

867 citations


Network Information
Related Topics (5)
Band gap
86.8K papers, 2.2M citations
91% related
Quantum dot
76.7K papers, 1.9M citations
89% related
Magnetization
107.8K papers, 1.9M citations
89% related
Silicon
196K papers, 3M citations
89% related
Thin film
275.5K papers, 4.5M citations
88% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202339
202263
202161
202072
201991
201888