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Balun

About: Balun is a research topic. Over the lifetime, 5375 publications have been published within this topic receiving 52256 citations. The topic is also known as: Telephone balance unit.


Papers
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Proceedings ArticleDOI
02 Jun 2002
TL;DR: In this article, a front-end receiver module integrating GSM/DCS/PCS band select functions and a direct conversion IC on a low temperature co-fired ceramic (LTCC) substrate is presented.
Abstract: This paper presents the results of a front-end receiver module integrating GSM/DCS/PCS band select functions and a direct conversion IC on a low temperature cofired ceramic (LTCC) substrate. The front-end-module (FEM) integrated a SP3T GaAs PHEMT switch for band selection, three SAW filters for pre-selection, and a direct conversion IC for down conversion of the RF signal. Integrated passives included a PCS balun, direct conversion IC matching elements and structures to improve the performance of differential SAW filters. The LTCC module contained 24 embedded passives and 15 surface mount components integrated on a 328 mil/spl times/586 mil, 19-layer multi-layer integrated circuit (MLIC). Receiver sensitivity was better than -114 dBm, the system noise figure was less than 9 dB, and the return loss characteristics measured at the antenna input port were better than 10 dB for all three bands. EM simulation was used to achieve first pass design success and the modeling approach yielded excellent agreement between measured and simulated results.

27 citations

Journal ArticleDOI
TL;DR: In this paper, a new realisation of a double junction balun with four decade bandwidth is presented, which is designed using coplanar line (CPS) and Coplanar waveguide with finite ground planes (CPW/sub FGP/).
Abstract: A new realisation of a double junction balun with four decade bandwidth is presented. The balun is designed using coplanar line (CPS) and coplanar waveguide with finite ground planes (CPW/sub FGP/). The simple theoretical model which describes the double junction balun as the all-pass network has been introduced. The measured VSWR is less than 1.3 and insertion loss less than 0.5 dB in the frequency range 300 kHz-4.0 GHz.< >

27 citations

Patent
02 Apr 2001
TL;DR: In this paper, a high-frequency module includes first to fifth terminals, a highpass filter, highfrequency switch, a transmitter side balun, and a receiver-side balun.
Abstract: A high-frequency module includes first to fifth terminals, a high-pass filter, a high-frequency switch, a transmitter-side balun, and a receiver-side balun. The high-pass filter is connected to the high-frequency switch, and the high-frequency switch is also connected to the transmitter-side balun and to the receiver-side balun. The first terminal is connected to an antenna, the second and third terminals are connected to a transmitter circuit, and the fourth and fifth terminals are connected to a receiver circuit.

27 citations

Proceedings ArticleDOI
01 Oct 2005
TL;DR: In this paper, a coplanar millimeter wave doubler MMIC covering the entire G-band was developed, achieving an output power of more than -12 dBm between 150- and 220 GHz for an input power of 0 dBm.
Abstract: A coplanar millimeter wave doubler MMIC covering the entire G-band was developed. Based on a 50 nm metamorphic HEMT technology, the circuit demonstrates an output power of more than -12 dBm between 150- and 220 GHz for an input power of 0 dBm. By increasing the input power to 12 dBm an output power exceeding 0 dBm was obtained in the frequency range between 180- and 220 GHz. Good fundamental rejection was ensured by using a Marchand balun for balancing the design. The doubler was also used to provide the LO signal for a 170 to 200 GHz resistive FET mixer, yielding a conversion loss of 10 dB.

27 citations

Journal ArticleDOI
TL;DR: In this article, the influence of patterned polysilicon and metal ground shield on the inductor-Q is compared and influence of highly doped active area underneath the inductors is shown.
Abstract: High-Q inductors are important for the realization of high-performance, low-power RF-circuits. In this paper, on-chip inductors with Q-factors above 40 have been realized above the passivation of a 90-nm RF-CMOS process using wafer-level packaging (WLP) techniques . The influence of a patterned polysilicon and metal ground shield on the inductor-Q is compared and the influence of highly doped active area underneath the inductors is shown. A 5-15 GHz above-IC balun has been realized on 20 Omegamiddotcm silicon with the use of patterned ground shield. The technology is demonstrated by a low-power 90-nm RF-CMOS 5-GHz VCO with a core current consumption of only 150 muA with a 1.2-V supply, and a 10% tuning range with a worst case phase noise of -111 dBc/Hz at 1-MHz offset. A 24-GHz single-stage common-source low-noise amplifier has been realized, with a noise figure of 3.2 dB, a gain of 7.5 dB, and a low power consumption of 10.6 mW

27 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202361
2022242
2021130
2020280
2019327
2018310