Balun

About: Balun is a research topic. Over the lifetime, 5375 publications have been published within this topic receiving 52256 citations. The topic is also known as: Telephone balance unit.

Bending Effect of an Inkjet-Printed Series-Fed Two-Dipole Antenna on a Liquid Crystal Polymer Substrate

Abstract: This letter presents a series-fed two-dipole antenna fabricated on a flexible liquid crystal polymer (LCP) substrate by using inkjet printing technology. The proposed antenna consists of two modified dipole elements of distinct lengths, a director element, a modified ground plane, and a balun filter, yielding a wide bandwidth with bandpass responses. The proposed antenna can be used at a frequency band of 26-32 GHz. The bending behaviors of the antennas with and without director elements were analyzed. The bending effect of the antenna should be considered when calculating the gain loss and bandwidth reduction. Inkjet printing on LCP substrates provides a low-cost, compact, and flexible packaging application that can be used in probable and flexible communication technology.

A fully integrated 7-18 GHz power amplifier with on-chip output balun in 75 GHz-f/sub T/ SiGe-bipolar

Abstract: A fully integrated rf power amplifier for 7-18 GHz-f/sub T/ with no external components was realized in a 75GHz-f/sub T/, 0.35/spl mu/m-SiGe-BiCMOS technology. At 17.2GHz the push-pull amplifier with integrated output balun delivers 12dBm, 17.5 dBm at 1.2V, 2.4V.

Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifiers With a Compact 2nd-Harmonic-Shorted Four-Way Transformer and a Thermally Compensating Dynamic Bias Circuit

Abstract: This article presents the design of a highly linear high-power silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) 802.11ac/ax wireless local area network (WLAN) power amplifiers (PAs). The challenges associated with electrothermal effects on the dynamic operation of WLAN PAs are first discussed. We then propose the design methods that take into account the electrothermal transient effect to improve linear output power ( $P_{\mathrm {OUT}}$ ) and dynamic error vector magnitude (DEVM). A compact four-way output transformer balun is proposed to achieve efficient power combining, and a built-in 2nd-harmonic short is demonstrated by using a novel multi-layered metallization scheme. A thermally compensating dynamic bias circuit that improves the DEVM and reduces memory effects is designed with an integrated temperature sensor. Different SiGe HBT array layouts, laterally and vertically arranged, of the output stage of the PA are also investigated. With the 802.11ac MCS9 VHT80 test signals, the DEVM of a PA with a laterally arranged output stage is lower than that of its vertical counterpart. This suggests the importance of the layout on the transistor electrothermal transient effect. The PA with the laterally arranged output stage shows a $P_{\mathrm {OUT}}$ of 22.5/23.6/23.2 dBm (DEVM = −35 dB) with 10.0/12.2/11.2% power-added efficiency (PAE) at 5210/5530/5855 MHz under an 802.11ac MCS9 VHT80 test signal at 50% duty cycle. Good DEVM performance was measured under the test signal with various duty cycles, indicating that the proposed PA is thermally robust. The design supports the 802.11ax MCS11 VHT80 signals with 19.4-dBm $P_{\mathrm {OUT}}$ , satisfying a DEVM of −40 dB.

Optimum Design of Transformer-Type Marchand Balun Using Scalable Integrated Passive Device Technology

Abstract: A simple and effective technique for designing transformer-type Marchand baluns is presented in this paper. The coupled-line sections required in a Marchand balun design are realized using planar transformers with a scalable model. The proposed design technique enables the prediction and optimization of Marchand balun performance over a wide range of layout and process parameters. To demonstrate the optimization process, Marchand baluns are designed for implementation using silicon and glass integrated passive device (IPD) technologies. Finally, experimental verification shows very good agreement between the modeled and measured results, thereby validating the IPD design optimization.

A 22 dBm, 0.6 mm² D-Band SiGe HBT Power Amplifier Using Series Power Combining Sub-Quarter-Wavelength Baluns

Abstract: We present a two-stage D-band power amplifier with stacked HBTs and sub-quarter-wavelength baluns as an efficient and compact series power combining technique which leads to a small die area of 0.62 mm² and a record 254 mW/mm² output power per unit die area. The power amplifier has been fabricated in a 90 nm SiGe BiCMOS technology and produces more than 21 dBm output power over the frequency range of 114-130 GHz with a peak output power of 160 mW (~22 dBm) at 120 GHz and a 3-dB small signal bandwidth of 35 GHz. To the author's knowledge, this is the highest recorded power for Si/SiGe BiCMOS process above 100 GHz. This amount of output power is 32% higher than highest prior work while the chip area is 13% the size of that work.