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Balun

About: Balun is a research topic. Over the lifetime, 5375 publications have been published within this topic receiving 52256 citations. The topic is also known as: Telephone balance unit.


Papers
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Patent
03 Aug 1987
TL;DR: In this paper, an improved element for use in an electrically steered antenna array is disclosed comprising a dipole, an integral balun and a 180° phase shift bit, which utilizes printed circuit techniques throughout using an unbalanced microstrip for connection to electrical circuitry.
Abstract: An improved element for use in an electrically steered antenna array is disclosed comprising a dipole, an integral balun and a 180° phase shift bit. The arrangement utilizes printed circuit techniques throughout using an unbalanced microstrip for connection to electrical circuitry, a balun for transitioning from unbalanced microstrip to a balanced dipole antenna and includes a low loss 180° phase shift bit formed by the use of a branched feed network including two diodes whose conductive states determine the sense of antenna excitation, and produce the equivalent of a 180° phase shift bit.

48 citations

Proceedings ArticleDOI
21 May 2006
TL;DR: The design and implementation of the RF front-end for the WiMAX (802.16e) and WLAN ( 802.11n) standards is presented, which covers the frequency ranges of operation for licensed and unlicensed bands of WiMAX and W LAN.
Abstract: In this paper, we present the design and implementation of the RF front-end for the WiMAX (802.16e) and WLAN (802.11n) standards. The front-end covers the frequency ranges of operation for licensed and unlicensed bands of WiMAX and WLAN, which include 2.3 GHz - 2.9 GHz, 3.3 GHz - 3.7 GHz and 4.9 GHz - 5.9 GHz. The gain of the front-end is between 30 - 32 dB for all the bands while achieving noise figures of 2.5 dB, 3.5 dB and 5.9 dB at the center frequencies of the lower, middle and upper bands respectively. The total front-end operates at the bias current of 26.25 mA and consumes 48 mW of power. The components include in the front-end are low noise amplifier, active balun or single to differential converter and mixer. The design of the front-end is performed in 1.8 V IBM CMOS 0.18/spl mu/m process.

48 citations

Patent
Ahmadreza Rofougaran1
08 Sep 2003
TL;DR: In this paper, a radio frequency integrated circuit includes a power amplifier, a low noise amplifier, and a first transformer balun, where the first transformer is coupled to a first antenna and the second transformer is coupling to a second antenna.
Abstract: A radio frequency integrated circuit includes a power amplifier, a low noise amplifier, a first transformer balun, and a second transformer balun. The power amplifier includes a first power amplifier section and a second power amplifier section. When enabled, the first and second power amplifier sections amplify an outbound radio frequency (RF) signal to produce a first amplified outbound RF signal and a second amplified outbound RF signal, respectively. The power amplifier provides the first amplified outbound RF signal to the first transformer balun and the second outbound RF signal to the second transformer balun, where the first transformer balun is coupled to a first antenna and the second transformer balun is coupled to a second antenna. The low noise amplifier includes a first low noise amplifier section and a second low noise amplifier section. When enabled, the first low noise amplifier section amplifies a first inbound RF signal to produce a first amplified inbound RF signal, and, when enabled, the second low noise amplifier section amplifies a second inbound RF signal to produce a second amplified inbound RF signal. The low noise amplifier receives the first inbound RF signal from the first transformer balun and receives the second inbound RF signal from the second transformer balun.

48 citations

Journal ArticleDOI
TL;DR: In this paper, a 60 GHz wideband Marchand balun fabricated with a standard 0.18 μm six-metal-layer CMOS process for millimeter-wave applications is presented.
Abstract: A novel 60-GHz wideband Marchand balun fabricated with a standard 0.18 μm six-metal-layer CMOS process for millimeter-wave applications is presented. A technique for achieving good balance with the fourth metal layer microstrip conductor is used in the designed Marchand balun. The fabricated CMOS balun uses multilayer coupling with the top two layers. An output matching network is added to improve the output return loss. The measured amplitude imbalance was about ±1.5 dB from 25 to 65 GHz, over the 89% operating frequency band. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 766–770, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24176

48 citations

Patent
23 Apr 2002
TL;DR: In this article, an integrated low noise amplifier includes an on-chip balun, a line impedance matching circuit and an onchip differential amplifier, which is operably coupled to convert a single-ended signal into a differential signal.
Abstract: An integrated low noise amplifier includes an on-chip balun, a line impedance matching circuit and an on-chip differential amplifier. The on-chip balun is operably coupled to convert a single ended signal into a differential signal. The line impedance matching circuit is operably coupled to the primary of the on-chip balun to provide impedance matching for a line carrying the single ended signal. The on-chip differential amplifier is operably coupled to amplify the differential signal and is impedance matched to the secondary of the on-chip balun.

47 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202361
2022242
2021130
2020280
2019327
2018310