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Balun

About: Balun is a research topic. Over the lifetime, 5375 publications have been published within this topic receiving 52256 citations. The topic is also known as: Telephone balance unit.


Papers
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Journal ArticleDOI
TL;DR: A new noise-cancelling method that employs a modified current-bleeding (CBLD) technique and balanced loads is presented by developing a design for a low-noise and high-linearity balun-low- noise amplifier (LNA) for broadband applications.
Abstract: A new noise-cancelling method that employs a modified current-bleeding (CBLD) technique and balanced loads is presented by developing a design for a low-noise and high-linearity balun-low-noise amplifier (LNA) for broadband applications. The basic common-gate (CG)–common-source (CS) balun topology cannot achieve a noise figure (NF) of less than 3 dB. Thus, a practical topology containing a CS transistor of which the transconductance is N times larger than that of the CG transistor and a CS resistor of which the resistance is $N$ times smaller than that of the CG resistor is often used to decrease the NF. However, unsymmetrical load resistors cause a gain and phase imbalance at the differential output. The proposed modified CBLD technique enables the balun-LNA to achieve differential balanced output, low noise, and low-second-order distortion characteristics. The proposed balun-LNA is implemented in 65-nm CMOS technology and covers the frequency range of 50 MHz–1 GHz. It achieves a voltage gain of 30 dB, an S11 of less than −10 dB, an OIP3 of 25.9 dBm, and an OIP2 of 50.6 dBm. The minimum NF is 2.3 dB whereas the average NF is 2.63 dB across the whole band. It operates at a nominal supply voltage of 2.2 V with bias currents of 9 mA. The active die area is 0.0448 mm2.

43 citations

Patent
Hans J. Weedon1, Louis Poulo1, Ravindran Sundar1, Mark R Jones1, Tin Lee1 
15 Sep 1993
TL;DR: In this paper, a high voltage power switching MOSFET (11, 12, 41, 42) of the type having coplanar leads having inductances on the order of between 8nH and 15nH is used in an RF amplifier.
Abstract: Although known because of the high packaging inductances and thought to be wholly unsuitable for RF amplifiers, high voltage power switching MOSFETs (11, 12, 41, 42) of the type having coplanar leads having inductances on the order of between 8nH and 15nH are used in an RF amplifier. The individual devices (11, 12, 41, 42) operate on a high impedance load line to render the high inductance of the coplanar leads insignificant. The circuit configuration presents a high impedance to the output (14) via balun (20), eliminating the need for expensive combiners and low inductance packaging.

43 citations

Patent
05 May 2009
TL;DR: In this paper, a transistor-based RF (radio frequency) power amplifier (112) having balanced outputs (172, 176), a transistorbased receiver RF amplifier (116), and a balun (114) having a primary (182, 186) and a secondary (188), having primary connections and a primary connection and a supply connection (185) of a primary, intermediate the primary connections with the secondary connections to switchlessly couple RF between the balun and the receiver.
Abstract: An electronic circuit comprising a transistor-based RF (radio frequency) power amplifier (112) having balanced outputs (172, 176), a transistor-based receiver RF amplifier (116) having balanced inputs (152, 156) ohmically connected to said balanced outputs (172, 176) respectively of said RF power amplifier (112), and a balun (114) having a primary (182, 186) and a secondary (188), said primary (182, 186) having primary connections and a supply connection (185) of said primary (182, 186) intermediate said primary connections and said primary connections ohmically connected both to said balanced outputs (172, 176) of said RF power amplifier (112) respectively and to said balanced inputs (152, 156) of said receiver RF amplifier, thereby to switchlessly couple RF between the balun (114) and the RF power amplifier (112) and switchlessly couple RF between the balun (114) and the receiver RF amplifier (116). Other electronic circuits, processes, devices and systems are disclosed.

43 citations

Patent
22 Dec 1988
TL;DR: In this article, a method for providing coaxial cable connections, each to a different portion of a single radio-frequency (RF) antenna without requiring the use of isolation means at any RF connection, is proposed.
Abstract: A method for providing plural coaxial cable connections, each to a different portion of a single radio-frequency (RF) antenna without requiring the use of isolation means at any RF connection, determines at least a point within the antenna having a desired common potential adjacent to each of the different portions to which one of the coaxial cable connections is to be made; Then forms a separate segment of each different portion which is located substantially at the common potential and is reactively separated from adjacent segments of the associated portion; and connects a shield conductor of an associated coaxial cable to the separate segment, while connecting a center conductor of that same associated coaxial cable to a selected one of the adjacent segments of that different portion

43 citations

Patent
11 Jun 1993
TL;DR: In this paper, an ultra wide band DC-to-GHz balun consisting of transmission lines, a small inverting junction, and an RC network connecting the shields of the balanced load transmission lines such that an unbalanced source sees a matched load from DC to GHz is presented.
Abstract: An ultra wide band DC to GHz balun consisting of transmission lines, a small inverting junction, and an RC network connecting the shields of the balanced load transmission lines such that an unbalanced source sees a matched load from DC to GHz.

43 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202361
2022242
2021130
2020280
2019327
2018310