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Balun

About: Balun is a research topic. Over the lifetime, 5375 publications have been published within this topic receiving 52256 citations. The topic is also known as: Telephone balance unit.


Papers
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Patent
17 Apr 2002
TL;DR: In this article, a ground terminal G1 is connected to the balanced transmission lines, which are constituted by the line elements 25 and 28, while a shield terminal G2 was connected to leading portions 30a to 32a of shield electrodes 30 to 32.
Abstract: Line elements 24 and 27 are connected in series through a relay terminal 43, to constitute an unbalanced transmission line. Line elements 25 and 28 each constitute a balanced transmission lines. The strip lines 24 and 25 are electromagnetically coupled to constitute a coupler. Similarly, the line elements 27 and 28 are electromagnetically coupled to constitute a coupler. A ground terminal G1 is connected to the balanced transmission lines, which are constituted by the line elements 25 and 28. Meanwhile, A shield terminal G2 is connected to leading portions 30a to 32a of shield electrodes 30 to 32. These two terminals G1 and G2 are electrically independent of each other.

40 citations

Patent
25 May 2005
TL;DR: In this paper, an apparatus and method for allowing two different signal paths to be coupled to a multi-tap transformer balun is presented. Butts et al. proposed a method to reduce the number of external components and integrated circuit package pins, and reduce the area required for each signal path on an integrated circuit die, a printed circuit board, or the like.
Abstract: An apparatus and method for allowing two different signal paths to be coupled to a multi-tap transformer balun. The multi-tap transformer has a first port, which is coupled to a single antenna, and two or more differential secondary ports. Each port has one or more taps, which are optimized separately for each of the signal paths, allowing each of the two or more signal paths to operate in different frequency bands. Use of the method of the invention can decrease the number of external components and integrated circuit package pins, and reduce the area required for each signal path on an integrated circuit die, a printed circuit board, or the like.

40 citations

Journal ArticleDOI
TL;DR: In this paper, a low temperature co-fired ceramic (LTCC) miniaturized dual-band balun using a tapered line structure has been presented, which can easily cover the important radio frequency bands at 2.4GHz, 5.25GHz, and 5.85GHz.
Abstract: In this letter, a novel low temperature cofired ceramic (LTCC) miniaturized dualband balun using a tapered line structure has been presented. The key concept for our dualband solution is by employing tapered line structures in the conventional Marchand baluns. In our new design, we have demonstrated the tapered line structure can shift the periodic operation frequency to a desired frequency band. A sample balun design has been presented. The novel LTCC dualband balun has been simulated and verified by measurement. The measured results exhibit that the proposed balun can easily cover the important radio frequency bands at 2.4GHz, 5.25GHz, and 5.85GHz.

40 citations

Proceedings ArticleDOI
02 Jun 2002
TL;DR: In this article, a new chip-type multi-layer ceramic balun is presented in the ISM band and fabricated using low temperature co-fired ceramic (LTCC) technology.
Abstract: A new chip-type multi-layer ceramic balun is presented in this paper. This balun is designed in the ISM band and fabricated using low temperature co-fired ceramic (LTCC) technology. It involves the semi-lumped concept and the multi-layer structure to realize the LTCC-MLC balun. The symmetric structure provides the excellent characteristics of phase balance and amplitude balancing. Measured results of the LTCC-MLC balun match well with the computer simulation.

40 citations

Journal ArticleDOI
TL;DR: A W-band active down-conversion mixer has been demonstrated using low leakage (higher VT) NMOS transistors of a 65-nm digital CMOS process with 6 metal levels to achieve conversion gain of -8 dB at 76 GHz with a local oscillation power of 4 dBm.
Abstract: A W-band (76-77 GHz) active down-conversion mixer has been demonstrated using low leakage (higher VT) NMOS transistors of a 65-nm digital CMOS process with 6 metal levels. It achieves conversion gain of -8 dB at 76 GHz with a local oscillation power of 4 dBm ( ~ -2 dBm after de-embedding the on-chip balun loss), and 3 dB bandwidth of 3 GHz. The SSB noise figures are 17.8-20 dB (11.3-13.5 dB after de-embedding on-chip input balun loss) between 76 and 77 GHz. IP1dB is -6.5 dBm and IIP3 is 2.5 dBm ( ~ -13 and ~ -4 dBm after de-embedding the on-chip balun loss). The mixer consumes 5 mA from a 1.2 V supply.

40 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202361
2022242
2021130
2020280
2019327
2018310