Showing papers on "Band gap published in 2022"
TL;DR: An ammonium-cation-passivated Pb-Sn perovskites with long diffusion lengths are developed, enabling subcells having an absorber thickness of ~1.2 μm, and a certified efficiency of 26.4% in all-perovskite tandem solar cells is reported, exceeding that of the best-performing single-junction perovSKite solar cells.
352 citations
TL;DR: In this paper , a record power conversion efficiency of over 19% was achieved in planar-mixed heterojunction (PMHJ) organic solar cells (OSCs) by adopting the asymmetric selenium substitution strategy in making a pseudosymmetric electron acceptor, BS3TSe•4F.
Abstract: A record power conversion efficiency (PCE) of over 19% is realized in planar‐mixed heterojunction (PMHJ) organic solar cells (OSCs) by adopting the asymmetric selenium substitution strategy in making a pseudosymmetric electron acceptor, BS3TSe‐4F. The combined molecular asymmetry with more polarizable selenium substitution increases the dielectric constant of the D18/BS3TSe‐4F blend, helping lower the exciton binding energy. On the other hand, dimer packing in BS3TSe‐4F is facilitated to enable free charge generation, helping more efficient exciton dissociation and lowering the radiative recombination loss (ΔE2) of OSCs. As a result, PMHJ OSCs based on D18/BS3TSe‐4F achieve a PCE of 18.48%. By incorporating another mid‐bandgap acceptor Y6‐O into D18/BS3TSe‐4F to form a ternary PMHJ, a higher open‐circuit voltage (VOC) can be achieved to realize an impressive PCE of 19.03%. The findings of using pseudosymmetric electron acceptors in enhancing device efficiency provides an effective way to develop highly efficient acceptor materials for OSCs.
152 citations
TL;DR: In this article , an in-depth illustration of the electrical and optical properties of TiO2 nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p-type doping, bandgap engineering, heterojunctions, and functional applications are presented.
Abstract: As a wide‐bandgap semiconductor material, titanium dioxide (TiO2), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting‐edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and low‐cost fabrication, the construction of high‐performance photodetectors (PDs) based on TiO2 nanostructures is being extensively developed. An elaborate microtopography and device configuration is the most widely used strategy to achieve efficient TiO2‐based PDs with high photoelectric performances; however, a deep understanding of all the key parameters that influence the behavior of photon‐generated carriers, is also highly required to achieve improved photoelectric performances, as well as their ultimate functional applications. Herein, an in‐depth illustration of the electrical and optical properties of TiO2 nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p‐type doping, bandgap engineering, heterojunctions, and functional applications are presented. Finally, a future outlook for TiO2‐based PDs, particularly that of further functional applications is provided. This work will systematically illustrate the fundamentals of TiO2 and shed light on the preparation of more efficient TiO2 nanostructures and heterojunctions for future photoelectric applications.
111 citations
TL;DR: In this paper , a Ga2O3 heterojunction PN diodes with holes injection was proposed to induce conductivity modulation and low resistance in a low-doping Ga 2O3 material.
Abstract: Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga2O3 material limit. Major obstacles are high breakdown voltage requires low doping material and PN junction termination, contradicting with low specific on-resistance and simultaneous achieving of n- and p-type doping, respectively. In this work, we demonstrate that Ga2O3 heterojunction PN diodes can overcome above challenges. By implementing the holes injection in the Ga2O3, bipolar transport can induce conductivity modulation and low resistance in a low doping Ga2O3 material. Therefore, breakdown voltage of 8.32 kV, specific on-resistance of 5.24 mΩ⋅cm2, power figure-of-merit of 13.2 GW/cm2, and turn-on voltage of 1.8 V are achieved. The power figure-of-merit value surpasses the 1-D unipolar limit of GaN and SiC. Those Ga2O3 power diodes demonstrate their great potential for next-generation power electronics applications.
102 citations
TL;DR: In this paper , a comprehensive overview of the different properties of WO3, including crystallographic, electrical, optical, thermoelectrical, and ferroelectric properties, is provided.
99 citations
92 citations
TL;DR: In this article, the authors demonstrate how to use the K-M function and apply it thoroughly to the determination of the E g of TiO2 semiconductor powder (pressed at different thicknesses) from diffuse reflectance spectroscopy (DRS) measurements.
92 citations
TL;DR: In this paper , the authors demonstrate how to use the K-M function and apply it thoroughly to the determination of the optical band gap energy (Eg) of TiO2 semiconductor powder (pressed at different thicknesses) from diffuse reflectance spectroscopy (DRS) measurements.
92 citations
TL;DR: In this paper , a review of basic and transition metal conducting and semiconducting oxides is presented, with an emphasis on the crystal, electronic, and band structures of the oxides.
Abstract: This Review highlights basic and transition metal conducting and semiconducting oxides. We discuss their material and electronic properties with an emphasis on the crystal, electronic, and band structures. The goal of this Review is to present a current compilation of material properties and to summarize possible uses and advantages in device applications. We discuss Ga2O3, Al2O3, In2O3, SnO2, ZnO, CdO, NiO, CuO, and Sc2O3. We outline the crystal structure of the oxides, and we present lattice parameters of the stable phases and a discussion of the metastable polymorphs. We highlight electrical properties such as bandgap energy, carrier mobility, effective carrier masses, dielectric constants, and electrical breakdown field. Based on literature availability, we review the temperature dependence of properties such as bandgap energy and carrier mobility among the oxides. Infrared and Raman modes are presented and discussed for each oxide providing insight into the phonon properties. The phonon properties also provide an explanation as to why some of the oxide parameters experience limitations due to phonon scattering such as carrier mobility. Thermal properties of interest include the coefficient of thermal expansion, Debye temperature, thermal diffusivity, specific heat, and thermal conductivity. Anisotropy is evident in the non-cubic oxides, and its impact on bandgap energy, carrier mobility, thermal conductivity, coefficient of thermal expansion, phonon modes, and carrier effective mass is discussed. Alloys, such as AlGaO, InGaO, (Al xIn yGa1− x− y)2O3, ZnGa2O4, ITO, and ScGaO, were included where relevant as they have the potential to allow for the improvement and alteration of certain properties. This Review provides a fundamental material perspective on the application space of semiconducting oxide-based devices in a variety of electronic and optoelectronic applications.
88 citations
TL;DR: In this article , mesoporous black TiO2 (b-TiO2) serves as the host to assemble MoS2 and Cu2S, which could absorb near-infrared energy to enhance photothermal effect.
85 citations
TL;DR: In this paper , the solvent dielectric constant and Gutmann donor number were used to grow phase-pure 2D halide perovskite stacks of the desired composition, thickness, and bandgap without dissolving the underlying substrate, which achieved a photovoltaic efficiency of 24.5% with less than 1% degradation under continuous light at 55°C and 65% relative humidity.
Abstract: Realizing solution-processed heterostructures is a long-enduring challenge in halide perovskites because of solvent incompatibilities that disrupt the underlying layer. By leveraging the solvent dielectric constant and Gutmann donor number, we could grow phase-pure two-dimensional (2D) halide perovskite stacks of the desired composition, thickness, and bandgap onto 3D perovskites without dissolving the underlying substrate. Characterization reveals a 3D–2D transition region of 20 nanometers mainly determined by the roughness of the bottom 3D layer. Thickness dependence of the 2D perovskite layer reveals the anticipated trends for n-i-p and p-i-n architectures, which is consistent with band alignment and carrier transport limits for 2D perovskites. We measured a photovoltaic efficiency of 24.5%, with exceptional stability of T99 (time required to preserve 99% of initial photovoltaic efficiency) of >2000 hours, implying that the 3D/2D bilayer inherits the intrinsic durability of 2D perovskite without compromising efficiency. Description Pure perovskite topcoats Two-dimensional (2D) halide perovskite passivation layers grown on three-dimensional (3D) perovskite can boost the power conversion efficiency (PCE) of solar cells, but spin-coating of these layers usually forms heterogeneous 2D phases or only ultrathin layers. Sidhik et al. found that solvents with the appropriate dielectric constant and donor strength could grow phase-pure 2D phases of controlled thickness and composition on 3D substrates without dissolving them. Solar cells maintained a peak PCE of 24.5% for 2000 hours with less than 1% degradation under continuous light at 55°C and 65% relative humidity. —PDS Solvents enable growth of phase-pure two-dimensional perovskites without dissolving three-dimensional perovskite substrates.
TL;DR: In this paper , a general strategy has been proposed for high-performance photodetectors through building a type-Ⅱ Ga2O3 heterojunction with the small-molecule hole transport materials (SMHTMs).
TL;DR: In this paper , a CsPbBr3 QD-in-perovskite matrix solids that enable high luminescent efficiency and spectral stability with an optical gap of over 2.6 eV was developed.
Abstract: The epitaxial growth of a perovskite matrix on quantum dots (QDs) has enabled the emergence of efficient red light-emitting diodes (LEDs) because it unites efficient charge transport with strong surface passivation. However, the synthesis of wide-band gap (Eg) QD-in-matrix heterostructures has so far remained elusive in the case of sky-blue LEDs. Here, we developed CsPbBr3 QD-in-perovskite matrix solids that enable high luminescent efficiency and spectral stability with an optical Eg of over 2.6 eV. We screened alloy candidates that modulate the perovskite Eg and allow heteroepitaxy, seeking to implement lattice-matched type-I band alignment. Specifically, we introduced a CsPb1-xSrxBr3 matrix, in which alloying with Sr2+ increased the Eg of the perovskite and minimized lattice mismatch. We then developed an approach to passivation that would overcome the hygroscopic nature of Sr2+. We found that bis(4-fluorophenyl)phenylphosphine oxide strongly coordinates with Sr2+ and provides steric hindrance to block H2O, a finding obtained by combining molecular dynamics simulations with experimental results. The resulting QD-in-matrix solids exhibit enhanced air- and photo-stability with efficient charge transport from the matrix to the QDs. LEDs made from this material exhibit an external quantum efficiency of 13.8% and a brightness exceeding 6000 cd m-2.
TL;DR: Tong et al. as discussed by the authors showed that the formation of quasi-2D structure (PEA)2GAPb2I7 from additives based on mixed bulky organic cations phenethylammonium and guanidinium (GA+) provides critical defect control to substantially improve the structural and optoelectronic properties of the narrowbandgap perovskite thin films.
Abstract: All-perovskite tandem solar cells are promising for achieving photovoltaics with power conversion efficiencies above the detailed balance limit of single-junction cells, while retaining the low cost, light weight and other advantages associated with metal halide perovskite photovoltaics. However, the efficiency and stability of all-perovskite tandem cells are limited by the Sn–Pb-based narrow-bandgap perovskite cells. Here we show that the formation of quasi-two-dimensional (quasi-2D) structure (PEA)2GAPb2I7 from additives based on mixed bulky organic cations phenethylammonium (PEA+) and guanidinium (GA+) provides critical defect control to substantially improve the structural and optoelectronic properties of the narrow-bandgap (1.25 eV) Sn–Pb perovskite thin films. This 2D additive engineering results in Sn–Pb-based absorbers with low dark carrier density (~1.3 × 1014 cm−3), long bulk carrier lifetime (~9.2 μs) and low surface recombination velocity (~1.4 cm s−1), leading to 22.1%-efficient single-junction Sn–Pb perovskite cells and 25.5%-efficient all-perovskite two-terminal tandems with high photovoltage and long operational stability. Tong et al. form a 2D perovskite layer with two large organic cations to improve the structural and optoelectronic properties of Sn–Pb perovskites, and eventually the performance of single-junction and tandem solar cells.
TL;DR: In this article , the electronic band structure of SnO2 QDs is modified by Mo dopants, which reduce the band gap by changing the position of the conduction band edge.
Abstract: Functional nanomaterials are desirable in the sustainable photocatalytic degradation of antibiotic contaminants, but the development of nanostructured photocatalysts is facing fatal challenges not only in synthesis strategies but also in property control. Herein, a facile synthesis strategy is accomplished by the green synthesis of SnO2 quantum dots (QDs) engineered by Mo modification. The effects of Mo incorporation on the microstructural, compositional, electrical and optical properties are discussed. The electronic band structure of SnO2 QDs is modified by Mo dopants, which reduce the band gap by changing the position of the conduction band edge. The Mo-modified band structure provides the SnO2 QDs with visible-light driven photocatalytic abilities in the removal of antibiotics as emerging organic contaminants. The nanostructured photocatalysts exhibit proficient performances in the degradation of tetracycline hydrochloride. The degradation efficiency is up to 96.5% when the antibiotic concentration is 25 mg/L and the rate constant is 0.033 min−1. The hydroxyl radicals, produced by the oxidation of water, are determined to be the main active species in the photocatalytic process. The valence band edge over 3 eV guarantees the strong oxidizing abilities of photogenerated holes to create highly active hydroxyl radicals for the efficient photocatalytic degradation. First principle calculations based on the density functional theory reveal the mechanism of Mo modification, illustrating that Mo 4d electrons extend the conduction band edge to the Fermi level. The present work provides a green synthesis strategy and mechanism insights for band structure modification of SnO2 QDs as proficient visible-light driven photocatalysts for environmental remediation.
TL;DR: In this paper, a comprehensive review of the perovskite type LaFeO3 has been presented to highlight the trend, challenges, and prospects of the material in the field of photocatalytic solar energy conversion and environment purification.
TL;DR: In this article , an asymmetric wideband gap non-fullerene acceptor named AITC was synthesized for improving the photovoltaic performance of organic solar cells.
Abstract: The ternary and tandem strategies are effective methods for improving the photovoltaic performance of organic solar cells (OSCs). Here an asymmetric wide-bandgap nonfullerene acceptor named AITC is synthesized. AITC with...
TL;DR: In this article , the authors report the fabrication and measurement of high-bandgap tandem thermophotovoltaics (TPV) cells with efficiencies of more than 40% and experimentally demonstrate the efficiency of high bandgap tandem TPV cells.
Abstract: Thermophotovoltaics (TPVs) convert predominantly infrared wavelength light to electricity via the photovoltaic effect, and can enable approaches to energy storage1,2 and conversion3-9 that use higher temperature heat sources than the turbines that are ubiquitous in electricity production today. Since the first demonstration of 29% efficient TPVs (Fig. 1a) using an integrated back surface reflector and a tungsten emitter at 2,000 °C (ref. 10), TPV fabrication and performance have improved11,12. However, despite predictions that TPV efficiencies can exceed 50% (refs. 11,13,14), the demonstrated efficiencies are still only as high as 32%, albeit at much lower temperatures below 1,300 °C (refs. 13-15). Here we report the fabrication and measurement of TPV cells with efficiencies of more than 40% and experimentally demonstrate the efficiency of high-bandgap tandem TPV cells. The TPV cells are two-junction devices comprising III-V materials with bandgaps between 1.0 and 1.4 eV that are optimized for emitter temperatures of 1,900-2,400 °C. The cells exploit the concept of band-edge spectral filtering to obtain high efficiency, using highly reflective back surface reflectors to reject unusable sub-bandgap radiation back to the emitter. A 1.4/1.2 eV device reached a maximum efficiency of (41.1 ± 1)% operating at a power density of 2.39 W cm-2 and an emitter temperature of 2,400 °C. A 1.2/1.0 eV device reached a maximum efficiency of (39.3 ± 1)% operating at a power density of 1.8 W cm-2 and an emitter temperature of 2,127 °C. These cells can be integrated into a TPV system for thermal energy grid storage to enable dispatchable renewable energy. This creates a pathway for thermal energy grid storage to reach sufficiently high efficiency and sufficiently low cost to enable decarbonization of the electricity grid.
TL;DR: In this article, the rapid and solvent-free high-energy ball-milling procedure was adopted to modify graphitic carbon nitride (g-C3N4) on a large-scale by phosphorus (P) atom doping and molybdenum phosphide (MoP) decorating.
Abstract: The critical prerequisite for realizing the industrial application of photocatalytic technology lies on developing efficient photocatalyst through reasonable and large-scale modification strategy. Herein, the rapid and solvent-free high-energy ball-milling procedure was adopted to modify graphitic carbon nitride (g-C3N4) on a large-scale by phosphorus (P) atom doping and molybdenum phosphide (MoP) decorating. It is confirmed that P doping can introduce a mid-gap state in the band gap of g-C3N4, broadening the light responsive region and enhancing the electrical conductivity of g-C3N4. The Mo N bond at the interface of P-doped g-C3N4 and MoP acting as electrons “delivery channels” facilitates the charge transfer from P-doped g-C3N4 to MoP, while the Schottky barrier promotes the separation of photocarriers. As a result, the optimized P-doped g-C3N4/MoP photocatalyst performs an improved H2 evolution rate of 4917.83 μmol·g−1·h−1 and a favorable H2 production stability. This work offers a replicable prototype on adopting high-energy ball-milling to modify photocatalyst.
TL;DR: In this paper , a CdS/ZnO nano heterojunction was synthesized and applied in piezocatalytic degradation of rhodamine B (RhB) under ultrasonic vibration.
01 Apr 2022
TL;DR: In this article , the rapid and solvent-free high-energy ball-milling procedure was adopted to modify graphitic carbon nitride (g-C3N4) on a large-scale by phosphorus (P) atom doping and molybdenum phosphide (MoP) decorating.
Abstract: The critical prerequisite for realizing the industrial application of photocatalytic technology lies on developing efficient photocatalyst through reasonable and large-scale modification strategy. Herein, the rapid and solvent-free high-energy ball-milling procedure was adopted to modify graphitic carbon nitride (g-C3N4) on a large-scale by phosphorus (P) atom doping and molybdenum phosphide (MoP) decorating. It is confirmed that P doping can introduce a mid-gap state in the band gap of g-C3N4, broadening the light responsive region and enhancing the electrical conductivity of g-C3N4. The MoN bond at the interface of P-doped g-C3N4 and MoP acting as electrons “delivery channels” facilitates the charge transfer from P-doped g-C3N4 to MoP, while the Schottky barrier promotes the separation of photocarriers. As a result, the optimized P-doped g-C3N4/MoP photocatalyst performs an improved H2 evolution rate of 4917.83 μmol·g−1·h−1 and a favorable H2 production stability. This work offers a replicable prototype on adopting high-energy ball-milling to modify photocatalyst.
TL;DR: In this paper , the effect of doping different transition metal into copper oxide (CuO) on the basic properties of CuO nanoparticles and, to study the photocatalytic behaviour of the doped CuO samples.
Abstract: The present research work focuses on preparing 3D transition metal doped copper oxide nanostructures through sonication method and to investigate the effect of doping different transition metal into copper oxide (CuO) on the basic properties of CuO nanoparticles and, to study the photocatalytic behaviour of the doped CuO samples. The morphological studies performed with the help of SEM revealed the formation of flower like CuO 3D nanostructures for all the doped samples. The slight shift in the position of peaks in the x-ray diffraction (XRD) pattern confirms that doping has been successfully done into CuO. Also, the sharp diffraction peaks suggest the polycrystalline nature of the sample with monoclinic structure. The UV-vis absorption analysis reveals a bandgap of 2.26, 2.12 and 2.15 eV for the CuO samples doped with nickel, zinc, and iron respectively via Tauc plot. The photocatalytic performance of the samples tested through the degradation of methylene blue (MB) dye suggests that samples doped with Zn shows better degradation. Thus, it is evident that the morphology and the optical properties of the CuO can be tailored by doping transition metal into it.
TL;DR: In this paper , a 1D/2D TiO2/ZnIn2S4 heterostructure was designed according to the principles of the S-scheme heterojunction.
TL;DR: In this paper , a lead-free inorganic perovskite material, such as Cs2AgBiBr6, was developed to solve the toxicity and stability issues of traditional lead halide perovsite solar cells.
Abstract: Development of lead-free inorganic perovskite material, such as Cs2AgBiBr6, is of great importance to solve the toxicity and stability issues of traditional lead halide perovskite solar cells. However, due to a wide bandgap of Cs2AgBiBr6 film, its light absorption ability is largely limited and the photoelectronic conversion efficiency is normally lower than 4.23%. In this text, by using a hydrogenation method, the bandgap of Cs2AgBiBr6 films could be tunable from 2.18 eV to 1.64 eV. At the same time, the highest photoelectric conversion efficiency of hydrogenated Cs2AgBiBr6 perovskite solar cell has been improved up to 6.37% with good environmental stability. Further investigations confirmed that the interstitial doping of atomic hydrogen in Cs2AgBiBr6 lattice could not only adjust its valence and conduction band energy levels, but also optimize the carrier mobility and carrier lifetime. All these works provide an insightful strategy to fabricate high performance lead-free inorganic perovskite solar cells.
TL;DR: In this article , two stable two-dimensional materials of carbon and bismuth elements, namely BiC and Bi 2 C monolayers, were examined by cohesive energy, Born criteria, first-principle MD simulations and phonon spectra, respectively.
TL;DR: In this paper , a stoichiometric etching strategy for the top surface of a defective cesium lead halide perovskite is developed by using ionic liquids, which is a novel technical route to improve the efficiency and environmental resilience of perovsite-based optoelectronic devices.
Abstract: The existence of a defective area composed of nanocrystals and amorphous phases on a perovskite film inevitably causes nonradiative charge recombination and structural degradation in perovskite photovoltaics. In this study, a stoichiometric etching strategy for the top surface of a defective cesium lead halide perovskite is developed by using ionic liquids. The dissolution of the original defective area substantially exposes the underlying perovskite, which is a high‐quality surface with retained stoichiometry and lattice continuity. The ionic liquid molecules are adsorbed on the perovskite surface via Coulombic interactions and passivate the undercoordinated surface lead centers. Such a structural modulation considerably reduces the trap density of the perovskite devices and enables a record power conversion efficiency of 17.51% and an open‐circuit voltage of 1.37 V of the CsPbI2Br cell with a perovskite bandgap of 1.88 eV. This work provides a novel technical route to improve the efficiency and environmental resilience of perovskite‐based optoelectronic devices.
TL;DR: In this paper , a modest solgel method has been employed to prepare the pure and Ag doped MnO2 nanoparticles and methodologically studied their physical, morphological, and photosensitive properties through XRD, TEM, EDAX, Raman, UV, PL and N2 adsorption - desorption study.
Abstract: A modest sol-gel method has been employed to prepare the pure and Ag doped MnO2 nanoparticles and methodologically studied their physical, morphological, and photosensitive properties through XRD, TEM, EDAX, Raman, UV, PL and N2 adsorption - desorption study. Tetragonal crystalline arrangement with spherical nanoparticles was found out through XRD and TEM studies. The EDAX studies further supported that formation Ag in the MnO2 crystal matrix. The bandgap energy of Ag doped MnO2 was absorbed through UV spectra. Photo -generated recombination process and surface related defects were further recognized by PL spectra. Through visible light irradiation, the photo - degradation of methyl orange (MO) and phenol dye solutions were observed. The optimum condition of (10 wt% of Ag) Ag doped MnO2 catalyst showed tremendous photocatalytic efficiency towards MO than phenol under same experimental study.
TL;DR: In this article , a tribromide ion was used to suppress the iodide interstitial formation and thus reduce charge recombination in bladed WBG perovskite films of Cs0.1FA0.2MA0.7Pb(I0.85Br0.15)3.
Abstract: Wide-bandgap (WBG) mixed-halide perovskites show promise of realizing efficient tandem solar cells but at present suffer from large open-circuit voltage loss and the mechanism is still unclear. Here we show that WBG perovskites with iodide–bromide compositions have an increased concentration of deep traps induced by iodide interstitials, which limits performance of WBG perovskite cells. We employ tribromide ions to suppress the iodide interstitial formation and thus reduce charge recombination in bladed WBG perovskite films of Cs0.1FA0.2MA0.7Pb(I0.85Br0.15)3. The 1-µm-thick opaque WBG perovskite solar cells have an efficiency of 21.9%, a small open-circuit voltage deficit of 0.40 V and a large fill factor of 83%. The efficiency of the best-performing monolithic perovskite–silicon tandem cell using this perovskite reaches 28.6%. The tribromide addition also suppresses light-induced phase segregation in WBG perovskites and thus enhance device stability. Encapsulated tandem cells maintain 93% of their initial efficiency after operation for 550 h. Efficient perovskite–silicon tandem solar cells with an efficiency of up to 28.6% are reported by employing tribromide ions to reduce charge recombination.
TL;DR: In this paper, the crystal phase adjustment of the sensing materials can optimize the band gap and oxygen-adsorptive capacity, which influences the gas sensing characteristics, and the results showed that the sensors based on R-TiO2 NRs displayed the higher response value (12.3) to 100ppm acetone vapor at 320°C compared to A-TiNodes (4.1) and B-NiO2NRs (2.3).
TL;DR: In this paper , the authors investigated the gas sensing characteristics of different crystal phase structures including rutile TiO2 nanorods (R-TiO2 NRs), anatase TiO 2 nanoparticles (A-TiOPNarticles) and brookite TiOPNorod (B-TiOPSnorods) via one-step hydrothermal process.