Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: In this paper, a direct vapor phase growth of high-quality vertically stacked heterostructure of SnS2/MoS2 monolayers is reported, where an extremely Type II band alignment exists in this 2D heterostructures, with band offset larger than any other reported.
Abstract: 2D van der Waals heterostructures with different types of band alignment have recently attracted great attention due to their unique optical and electrical properties. Most 2D heterostructures are formed by transfer-stacking two monolayers together, but the interfacial quality and controllable orientation of such artificial structures are inferior to those epitaxial grown heterostructures. Herein, for the first time, a direct vapor phase growth of high-quality vertically stacked heterostructure of SnS2/MoS2 monolayers is reported. An extremely Type II band alignment exists in this 2D heterostructure, with band offset larger than any other reported. Consistent with the large band offset, distinctive optical properties including strong photoluminescence quenching in the heterostructure area are observed in the heterostructure. The SnS2/MoS2 heterostructures also exhibit well-aligned lattice orientation between the two layers, forming a periodic Moire superlattice pattern with high lattice mismatch. Electrical transport and photoresponsive studies demonstrate that the SnS2/MoS2 heterostructures exhibit an obvious photovoltaic effect and possess high on/off ratio (>106), high mobility (27.6 cm2 V−1 s−1) and high photoresponsivity (1.36 A W−1). Efficient synthesis of such vertical heterostructure may open up new realms in 2D functional electronics and optoelectronics.
150 citations
TL;DR: In this paper, the authors investigated the thickness dependence of band gap and valence band alignment for Al 2 O 3 and ZrO 2 dielectric layers by ex situ X-ray photoelectron spectroscopy.
Abstract: The atomic layer chemical vapor deposition (ALCVD) deposited Al 2 O 3 and ZrO 2 films were investigated by ex situ X-ray photoelectron spectroscopy. The thickness dependence of band gap and valence band alignment was determined for these two dielectric layers. For layers thicker than 0.9 nm (Al 2 O 3 ) or 0.6 nm (ZrO 2 ), the band gaps of the Al 2 O 3 and ZrO 2 films deposited by ALCVD are 6.7 ± 0.2 and 5.6 ± 0.2 eV, respectively. The valence band offsets at the Al 2 O 3 /Si and ZrO 2 /Si interface are determined to be 2.9 ± 0.2 and 2.5 ± 0.2 eV, respectively. Finally, the escape depths of Al2p in Al 2 O 3 and Zr 3p3 in ZrO 2 are 2.7 and 2.0 nm, respectively.
147 citations
TL;DR: The oxygen-terminated interface is found to be favored for devices, because it has no gap states and has a band offset which is rather independent of interfacial bonding.
Abstract: New oxides with high dielectric constant are required for gate oxides. ZrO2 is a typical example with ionic bonding. We give the rules for bonding at interfaces between Si and ionic oxides, to satisfy valence requirements and give an insulating interface. Total energies and band offsets are calculated for various (100)Si:ZrO(2) and HfO2 interface structures. The oxygen-terminated interface is found to be favored for devices, because it has no gap states and has a band offset which is rather independent of interfacial bonding.
146 citations
TL;DR: In this paper, the authors investigated the band offset at the chemical bath deposition (CBD)-ZnS/CIGS interface region using a XPS spectral multiplot.
142 citations
TL;DR: In this article, a simplified linear combination of muffin-tin orbitals method was used to calculate the energy bands of Mo${\mathrm{S}}_{2}$ and Nb$
Abstract: The simplified linear combination of muffin-tin orbitals method has been used to calculate the energy bands of Mo${\mathrm{S}}_{2}$ and Nb${\mathrm{S}}_{2}$. The calculated bands are in excellent agreement with photoemission data and provide a new interpretation of optical absorption spectra different from that of Wilson and Yoffe. The effect of the weak interlayer potential on the ${d}_{{z}^{2}}$ conduction band is shown explicitly.
140 citations