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Band offset

About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.


Papers
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Patent
19 Nov 2015
TL;DR: In this article, a method for signaling sample adaptive offset (SAO) band offset syntax elements in a video encoder is provided that includes receiving a plurality of band offset syntactic elements, entropy encoding an absolute value of a magnitude of each band offset element in a compressed video bit stream, and entropy encoding a sign of each non-zero band offset signal element in the compressed bit stream following the absolute values of the magnitudes.
Abstract: A method for signaling sample adaptive offset (SAO) band offset syntax elements in a video encoder is provided that includes receiving a plurality of band offset syntax elements, entropy encoding an absolute value of a magnitude of each band offset syntax element in a compressed video bit stream, and entropy encoding a sign of each non-zero band offset syntax element in the compressed video bit stream following the absolute values of the magnitudes.

24 citations

Journal ArticleDOI
Cong Mu1, Wei Wei1, Jinjin Li1, Baibiao Huang1, Ying Dai1 
27 Apr 2018
TL;DR: In this article, the electronic properties of in-plane heterostructure of WS2/WSe2/MoS2 are studied by means of the first-principles calculations based on density functional theory.
Abstract: In-plane heterostructure of two-dimensional (2D) transition metal dichalcogenides (TMDs) means the formation of one-dimensional (1D) interfaces, and promises exciting properties. The electronic properties of in-plane heterostructure of WS2/WSe2/MoS2 are studied by means of the first-principles calculations based on density functional theory (DFT). We find that the band gap can be continuously tuned by changing the length of the components of the in-plane heterostructure, which can be explained by confinement effects. Lattice mismatch induced strain play a crucial role in determining the electronic properties, such as direct-indirect band gap transition, band alignment and the band offset of band edge. Our results suggest that the rich and tunable electronic properties endow in-plane heterostructure of WS2/WSe2/MoS2 great potential in applications in such as light emitting and photovoltaics.

24 citations

Journal ArticleDOI
TL;DR: In this paper, a new In0.49Ga0.51P/AlxGa1−xAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure is theoretically analyzed and investigated.
Abstract: A newly designed In0.49Ga0.51P/AlxGa1−xAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure is theoretically analysed and investigated. By introducing a compositionally linear-graded AlGaAs layer into conventional InGaP/GaAs heterojunctions, a zero conduction-band discontinuity and a completely deleted potential spike can be obtained. Due to the suppression of potential spikes at the emitter/base junction, the studied device shows better dc performances such as a lower offset voltage (≤25 mV), lower saturation voltage (≤0.3 V), uniform current gain (~40) and lower turn-on voltage (~1.15 V). In addition, better ac performances are achieved. Consequently, the designed structure provides promise for high-performance analogue, digital and microwave device applications.

24 citations

Journal ArticleDOI
TL;DR: In this article, the methode du potentiel gele des discontinuites de la bande de valence dans les superreseaux is calculated, and a nouvelle methode fondee sur les deplacements des potentiels des atomes individuels is presented.
Abstract: Calcul par la methode du potentiel gele des discontinuites de la bande de valence dans les superreseaux. Comparaison avec les resultats obtenus par une nouvelle methode fondee sur les deplacements des potentiels des atomes individuels. La discontinuite de bande de valence n'est pas affectee par les champs electriques internes resultant de la separation de charge a l'interface des superreseaux polaires [001]

24 citations

Journal ArticleDOI
TL;DR: In this article, the authors identify the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs.

24 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202336
202267
202178
202085
201980
201882