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Band offset

About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.


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TL;DR: In this article, the electronic structures of InSe and black phosphorus (BP) heterostructure modulated by an external electric field (E ⊥ ) have been investigated based on first-principles calculations.

24 citations

Journal ArticleDOI
TL;DR: In this paper, the authors used interband exciton transitions in parabolically graded quantum wells to measure the band offset at the InSb/AlxIn1−xSb interface.
Abstract: We use interband exciton transitions in parabolically graded quantum wells to measure the band offset at the InSb/AlxIn1−xSb interface. The method we use is based on similar studies in the GaAs/AlxGa1−xAs system but modified to reflect the strong nonparabolicity and strain of the InSb/AlxIn1−xSb system. We find a conduction band offset ratio of 0.62±0.04 for Al concentrations in the range 2%–12%. The observed lack of variation of the offset with Al concentration suggests a lack of strain dependence in the InSb/AlxIn1−xSb system for practical Al concentrations.

24 citations

Journal ArticleDOI
TL;DR: In this paper, experimental photoresponses and electrical properties of metal/ beta-FeSi2/Si structures are presented. And the authors compare three kinds of samples: two with a thin epitaxial silicide layer (180 AA), prepared by two different methods, and one with a thick polycrystalline silicide layers (2500 AA).
Abstract: Experimental photoresponses and electrical characteristics of metal/ beta -FeSi2/Si structures are presented. Three kinds of samples are compared: two with a thin epitaxial silicide layer (180 AA), prepared by two different methods, and one with a thick polycrystalline silicide layer (2500 AA). The rectifying behaviour and the photoelectric response of the three kinds of samples are different. In the thin samples these properties are governed by those of the beta -FeSi2/Si interface, whereas for thick samples bulk mechanisms dominate. Analysis of the photocurrent in one kind of thin sample shows that two contributions exist. Their intensities follow similar temperature behaviours but the two transition thresholds do not. These considerations allow assignment of the initial and final states of the transitions, and the upper threshold is shown to correspond to an internal photoemission effect at the beta -FeSi2/Si interface. The conduction band offset is deduced from the difference between the two thresholds. The valence band discontinuity is less than 50 meV between 360 K and 260 K, whereas it changes sign when the temperature decreases below 260 K, the two bandgaps becoming nested within each other. These properties are also discussed for the other kinds of sample and related to the mechanisms which are responsible for the electrical characteristics.

24 citations

Journal ArticleDOI
TL;DR: In this paper, the microscopic nature and control of the band lineup at semiconductor-semiconductor interfaces were discussed, and a correlation between measured heterojunction band discontinuities and Schottky barrier heights of the corresponding semiconductors was identified.
Abstract: We discuss two recent results on the microscopic nature and control of the band lineup at semiconductor-semiconductor interfaces. First, we identified a correlation between measured heterojunction band discontinuities and Schottky barrier heights of the corresponding semiconductors, as predicted by several theoretical models. Second, we found that ultrathin metal intralayers modify the band lineup of polar interfaces by several tenths of an electron volt. At least in principle, this degree of freedom can be exploited to tailor heterojunction devices.

24 citations

Journal ArticleDOI
TL;DR: In this article, a comparative study on the cleaning effect of the intrinsic oxide covering GaAs surface using TMA precursor and Al2O3 buffer layer was performed, and the combined results of X-ray photoemission spectroscopy (XPS) analysis and electrical evaluation indicates that the trimethylaluminum (TMA) precursor can effectively remove surface oxides on the GaAs substrate and inhibit oxygen diffusion in a manner similar to the Al 2 O 3 buffer layer, thus avoiding the generation of the low-k Al 2O3 interface layer.
Abstract: In this work, comparative study on the cleaning effect of the intrinsic oxide covering GaAs surface using TMA precursor and Al2O3 buffer layer were performed. GaAs substrates were either exposed to the TMA precursor or Al2O3 buffer layer was deposited on them under the same cycle prior to the deposition of HfGdO films. The combined results of X-ray photoemission spectroscopy (XPS) analysis and electrical evaluation indicates that the trimethylaluminum (TMA) precursor can effectively remove surface oxides on the GaAs substrate and inhibit oxygen diffusion in a manner similar to the Al2O3 buffer layer, thus avoiding the generation of the low-k Al2O3 interface layer. Moreover, the reduction in valence band offset and the increase in conduction band offset were obtained through passivated atomic-layer-deposition (ALD) of the TMA precursor. The MOS capacitor with GaAs passivated by 20 cycles TMA ALD showed almost no hysteresis, minimum interface state density (∼1.5 × 1012 cm−2 eV−1), greatest band offset (∼2.86 eV), and smaller oxide charge density (∼−2.76 × 1013 cm−2), which led to the maximum dielectric constant (∼35.9) and the lowest leakage current density (∼1.4 × 10−5 A cm−2). Furthermore, the leakage current density–voltage (J–V) characteristic curves at low temperature determined that the device showed stable and reliable electrical properties.

24 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202336
202267
202178
202085
201980
201882