Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
Papers published on a yearly basis
Papers
More filters
Patent•
02 Nov 2012TL;DR: In this article, a video coder configured to perform sample adaptive offset filtering can determine a center value for a set of pixels based on values of pixels in the set, divide bands of pixels values into groups based on the center value, and determine offset values for the bands based on groups.
Abstract: A video coder configured to perform sample adaptive offset filtering can determine a center value for a set of pixels based on values of pixels in the set, divide bands of pixels values into groups based on the center value, and determine offset values for the bands based on the groups.
22 citations
TL;DR: In this paper, a 16-band Hamiltonian matrix is used to examine the shift of different bands as a function of Sb concentration for both bulk and quantum well structures for GaAsNSb/GaAs.
22 citations
Patent•
IBM1
TL;DR: In this article, a photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure opposite the first side.
Abstract: A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device A back contact is coupled to the back side structure opposite the light collecting end portion
22 citations
TL;DR: In this article, the energy difference between the Fermi level of the substrate and the valence band maximum of alumina (band offset) was analyzed by analyzing multiple peaks of Al 2p, and a novel method for controlling the band offset was proposed.
Abstract: Epitaxial ultrathin alumina films were grown on a Cu−9 at. % Al(111) substrate by selective oxidation of Al in the alloy in ultrahigh vacuum. The photoelectron spectra of Al 2p and valence band were measured in situ during oxidation. By analyzing multiple peaks of Al 2p, the interface atomic structure was discussed. The energy difference between the Fermi level of the substrate and the valence band maximum of alumina (band offset) was obtained. The relation between the interface atomic structure and the band offset was compared with the reported first-principles calculations. A novel method for controlling the band offset was proposed.
22 citations
TL;DR: In this paper, the magnetic proximity effects at the Al/EuS interfaces were investigated for topological superconductivity at zero applied magnetic field, and it was shown that the ferromagnetic hybrid nanowire with overlapping Al and EuS layers can become a topologically superconductor within realistic parameter regimes.
Abstract: We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment, combining both spectroscopic results and microscopic device simulations. In particular, we use angle-resolved photoemission spectroscopy to investigate the band bending at the InAs/EuS interface. The resulting band offset value serves as an essential input to subsequent microscopic device simulations, allowing us to map the electronic wave function distribution. We conclude that the magnetic proximity effects at the Al/EuS as well as the InAs/EuS interfaces are both essential to achieve topological superconductivity at zero applied magnetic field. Mapping the topological phase diagram as a function of gate voltages and proximity-induced exchange couplings, we show that the ferromagnetic hybrid nanowire with overlapping Al and EuS layers can become a topological superconductor within realistic parameter regimes. Our work highlights the need for a combined experimental and theoretical effort for faithful device simulations.
22 citations