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Band offset

About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.


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Journal ArticleDOI
TL;DR: In this paper, the junction formation of polycrystalline CuInSe 2 absorbers with thermally evaporated CdS was investigated by high-resolution synchrotron X-ray photoelectron spectroscopy.

21 citations

Journal ArticleDOI
TL;DR: In this paper, the orientation and the growth sequence dependence of the valence-band offset ΔEv at the lattice matched common anion GaAs•AlAs interfaces were systematically studied.
Abstract: We systematically studied the orientation and the growth sequence dependence of the valence‐band offset ΔEv at the lattice‐matched common anion GaAs‐AlAs interfaces. High quality GaAs‐AlAs heterojunctions were carefully grown on GaAs substrates with three major orientations, namely, (100), (110), and (111)B. The core level energy distance ΔECL between Ga 3d and Al 2p levels was measured by in situ x‐ray photoemission spectroscopy. ΔECL is found to be independent of the substrate orientation and the growth sequence, which clearly indicates the face independence of ΔEv. This result suggests that the band lineup at lattice‐matched isovalent semiconductor heterojunctions is determined by the bulk properties of the constituent materials. ΔEv is determined to be 0.44 ± 0.05 eV.

21 citations

Journal ArticleDOI
TL;DR: In this paper, the minority electron diffusion length in p-InGaN was little affected by the In content in InGaN, and the diffusion length decreased with increasing Mg-doping concentration.

21 citations

Journal ArticleDOI
TL;DR: In this article, the authors reported that a very controlled oxidation occurs in the MoS2 colloidal QDs under the ambient condition giving rise to oxide/MoS2 core-shell structure.

21 citations

Journal ArticleDOI
TL;DR: In this article, the authors determined the band offset of eight layered heterocontacts consisting of combinations of combinations between SnS2, SnSe2, WSe2 and GaSe.
Abstract: We determined the band offset of eight layered heterocontacts consisting of combinations between SnS2, SnSe2, WSe2, MoS2, MoTe2, InSe, and GaSe. The comparison of offsets predicted by the electron affinity rule (EAR) revealed a systematic deviation. Due to the absence of structural dipoles in layered materials, this deviation corresponds to the magnitude of the quantum dipoles at the interface which allows the development of a quantum dipole correction term for the EAR. The corrected EAR is still a linear rule. The error margin of the corrected EAR lies well within the experimental error of photoemission spectroscopy experiments, thus proving the general applicability of linear rules for the determination of the band offset.

21 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202336
202267
202178
202085
201980
201882