Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: In this paper, the authors studied the band offset and alignment of pulsed laser deposited Al2O3/CuGaO2 and ZnO/CogO2 hetero-structures using photoelectron spectroscopy.
19 citations
TL;DR: In this paper, the fundamental and imperfection-related components of the electron state density at interfaces of (1 − 0)Ge with several high-κ oxides have been investigated by a set of complementary methods to reveal general trends in their evolution.
19 citations
TL;DR: In this paper, a review of different optical techniques that can be used to investigate the presence of as- grown and/or process induced stacking faults (SFs) in 4H - SiC epitaxial layers is presented.
Abstract: We present a review of the different optical techniques that can be used to investigate the presence of as- grown and/ or process- induced stacking faults ( SFs) in 4H - SiC epitaxial layers A SF is always a finite admixture of different polytypes, and we begin with a brief review of the systematic of SiC polytype structure and electronic properties Next, we discuss the optical signature and compare with the results of several model calculations, taking successively into account the effect of valence band offset, internal polarization and non-homogeneity of the potential well Finally, we consider cathodo-luminescence and micro- photoluminescence techniques and show that, in both cases, some screening of the built- in electric field can be achieved
19 citations
TL;DR: In this paper, electrostatic force microscopy was applied to photovoltaic devices to measure the electrical potentials on cross sections of a GaInP2 solar cell device.
Abstract: We report on the application of electrostatic force microscopy to photovoltaic devices. Profiles of electrical potentials on cross sections of a GaInP2 solar cell device were measured quantitatively and spatially resolved. Two potentials are assigned, respectively, to the p–n junction of GaInP2 and the band offset between the GaInP2 base layer and the GaAs substrate. In addition to the flattening of the p–n junction by the light irradiations, two changes of the potential that positively contribute to the open-circuit voltage of the device are found at locations close to the window and the back surface field layers.
19 citations
TL;DR: In this paper, an automatic optimization loop based on Nelder-Mead simplex optimization algorithm has been implemented to obtain optimal CIGS absorber's band-gap grading profile.
19 citations