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Band offset

About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors interpreted photoluminescence peak energy shifts under applied uniaxial stress and uniprocessional stress in the framework of a multi-band Kohn-Luttinger model.
Abstract: Photoluminescence peak energy shifts under applied [110] and [100] uniaxial stress are interpreted within the framework of a multi-band Kohn–Luttinger model which takes into account the mixing of heavy, light, and spin-orbit split-off holes within the valence band. Experimental data are presented for 0.5%, 1%, and 1.7% Si1−yCy/Si samples which are best fitted with a conduction band offset of approximately 70%. At this value of the conduction band offset, we show that small amounts of space charge induced band bending are required to explain the experimentally observed results.

17 citations

Book ChapterDOI
28 Jan 2011
TL;DR: In this paper, the atomic and electronic structures of semiconductor interfaces are explained, focusing on fundamental physics revealed by recent researches, and the origins of the Schottky barrier and the band offset are explained.
Abstract: Atomic and electronic structures of semiconductor interfaces are explained, focusing on fundamental physics revealed by recent researches. To understand atomic structures, it is essential to understand how the interface is formed and how stable the interface is. We consider these by illustrating the epitaxial growth and oxidation processes and explaining key concepts such as the growth diagram, growth modes, stress release, and defect generation. On the other hand, the most important quantities to characterize the interface electronic structures are the Schottky barrier and the band offset, because they govern most transport and optical properties around interfaces. The origins of these quantities are explained, using key concepts such as the interface states, charge neutrality level, band bending, and Fermi-level pinning. Prospects for future trend of interface investigations are also illustrated.

17 citations

Journal ArticleDOI
TL;DR: In this paper, thermal nitridation treatment of GaAs surface prior to high-k deposition is proposed to solve the issue of interface pinning, which increases the conduction band offset at the GaAs/AlOxNy interface, followed by a saturated accumulation capacitance with reduced gate leakage current.
Abstract: Fermi level pinning attributed to oxides at the GaAs/high-k interface is a major obstacle to develop GaAs-based metal-oxide-semiconductor devices with high performance. In this letter, thermal nitridation treatment of GaAs surface prior to the high-k deposition is proposed to solve the issue of interface pinning. Results have confirmed that nitridation passivation effectively suppresses the oxides formation and leads to a shift in the Fermi level toward the conduction band minimum on the GaAs surface, which increases the conduction band offset at the GaAs/AlOxNy interface, followed by a saturated accumulation capacitance with reduced gate leakage current.

17 citations

Journal ArticleDOI
TL;DR: In this paper, an experimental long wavelength infrared photocurrent study of a series of a Si-SiGe double-heterostructure samples is presented. But the active region is a thin heavily p-type doped SiGe layer, and the photoexcited holes due to free-carrier absorption are collected over the potential barrier resulting from the Si−SiGe valence-band offset.
Abstract: We report on an experimental long wavelength infrared photocurrent study of a series of a Si‐SiGe double‐heterostructure samples. The active region is a thin heavily p‐type doped SiGe layer, and the photoexcited holes due to free‐carrier absorption are collected over the potential barrier resulting from the Si‐SiGe valence‐band offset. Photocurrent spectra with different cutoff wavelengths are observed for samples with different SiGe compositions, arising from internal photoemission in the Si‐SiGe heterojunction. Photocurrents at finite biases and at zero bias (i.e., photovoltaic operation) are studied. Optimizing device parameters may lead to detector structures for large focal plane arrays.

17 citations

Journal ArticleDOI
TL;DR: In this paper, the valence band offset between InAs and InAs,Sb is deduced to be type II with electron confinement in the InAs/InAs 0.865Sb 0.135 with photoluminescence emission at wavelengths up to 4.8 μm.
Abstract: InAs/InAs0.865Sb0.135 quantum wells are characterized using magneto‐photoluminescence. Band‐ to‐band transitions are found at energies lower than the band gaps of either the InAs or the InAs0.865Sb0.135 with photoluminescence emission at wavelengths up to 4.8 μm. By modeling the quantum size shifts of the photoluminescence transitions and their energy shift in a magnetic field, the valence band offset between InAs and In(As,Sb) is deduced to be type II with electron confinement in the In(As,Sb) alloy and hole confinement in InAs.

17 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202336
202267
202178
202085
201980
201882