scispace - formally typeset
Search or ask a question
Topic

Band offset

About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.


Papers
More filters
Journal ArticleDOI
TL;DR: In this article, the band offsets of strained InAs grown on an AlSb(001) substrate are calculated for both the InSb and AlSAs interfaces, and a valence band offset of 0.19 eV (AlSb valence max higher) is calculated within first principles local density functional theory, independent of the type of interfacial bonding.
Abstract: The band offsets of strained InAs grown on an AlSb(001) substrate are calculated for both the In‐Sb and Al‐As interfaces. A valence band offset of 0.19 eV (AlSb valence max higher) is calculated within first‐principles local density functional theory, independent of the type of interfacial bonding. Short‐period superlattices with identical InAs and AlSb lengths but differing only in the type of interfacial bond exhibit, however, quantum‐confined states that can differ by 0.25 eV, and this is explained in terms of the superlattice wave functions. The 0.13 eV strain‐induced decrease in the InAs gap leads to an extremely small energy difference of 0.04–0.10 eV between the InAs conduction minimum and the AlSb valence maximum, and presents a possible explanation for the increase in the InAs quantum well charge seen with increasing temperature.

17 citations

Journal ArticleDOI
TL;DR: It is found that these deep valence states significantly reduce the light-hole confinement in GaAs-(Ga,In)P quantum wells.
Abstract: This work reports on growth, characterization, and calculation of the electronic structure of GaAs-(Ga,In)P quantum wells, where the two semiconductors share neither a common anion nor a common cation. Metal organic molecular-beam epitaxy was the growth method that we used. The composition of the disordered alloy was close to 50 at. % indium. We have determined the valence-band offset in such structures. We have found ΔE c /ΔE υ =0.4, and have calculated the influence of the spin-orbit split-off states on the light-hole confinement. We found that these deep valence states significantly reduce the light-hole confinement

17 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated the Si-interlayer-induced change of the valence band discontinuity (ΔEv) at GaAs-AlAs interfaces and concluded that the observed change of ΔEv is only an apparent one.
Abstract: X-ray photoelectron spectroscopy reinvestigation is done for the recently reported Si-interlayer-induced change of the valence band discontinuity (ΔEv) at GaAs-AlAs interfaces. The XPS measurements reproduced the large apparent change of ΔEv caused by the Si interlayer. However, it also led to anomalous increases of separations between the core level peak and the valence band edge as well as anomalous increases of full width at half maximum of the core level spectra. It is concluded that the observed change of ΔEv is only an apparent one. The anomalies were explained quantitatively by a new model based on the surface Fermi level pinning and interface delta-doping.

17 citations

Journal ArticleDOI
TL;DR: In this paper, the optical properties of pulsed laser ablated amorphous high-k LaGdO3 (LGO) thin films on quartz (0001) substrates and its conduction/valance band offset with Si were studied.
Abstract: Optical properties of pulsed laser ablated amorphous high-k LaGdO3 (LGO) thin films on quartz (0001) substrates and its conduction/valance band offset with Si were studied Complex refractive index and bandgap were extracted from the transmission spectra An increase in the bandgap with decreasing film thickness was observed The degree of structural disorder frozen in the network was estimated using Urbach model and found that the amorphousness increased with decreasing thickness The analysis of refractive index dispersion with wavelength confirmed the single-effective-oscillator model for the direct inter-band transition The calculated conduction and valance band offset of LGO with silicon were 257 ± 015 eV and 191 ± 015 eV, respectively, and are high enough to suppress the electron or hole injection into the conduction and valence band of LGO from the Si substrate, hence, can be of use as new high-k dielectric for the Si based CMOS technology

17 citations

Journal ArticleDOI
TL;DR: In this paper, all electron full potential calculations based on spin density functional theory were performed to study cubic zincblende (ZB) and hexagonal NiAs structures of bulk CrTe, free (0, 0, 1) surfaces of ZB CrTe and interface of CrTe with ZnTe, and the obtained phase diagram evidences more stability of the Te terminated surface compared with the Cr termination.

17 citations


Network Information
Related Topics (5)
Band gap
86.8K papers, 2.2M citations
91% related
Thin film
275.5K papers, 4.5M citations
90% related
Silicon
196K papers, 3M citations
89% related
Amorphous solid
117K papers, 2.2M citations
85% related
Raman spectroscopy
122.6K papers, 2.8M citations
82% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202336
202267
202178
202085
201980
201882