Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: In this paper, the authors demonstrate that HfS2, which has been proven to possess a much higher mobility of electrons and has been experimentally synthesized recently, fully satisfies conditions of heterostructure with BP.
Abstract: Black phosphorus (BP)-based heterostructure with tunable band offset has been proven to be promising for rectifier diode and photoelectronic devices. However, it is usually not easy to find a suitable material to construct the heterojunction because the necessary type-II band structure and the strong unintentional p-type doping of BP should be both considered. Therefore, most of studies mainly focused on certain 2D materials, like MoS2 and WSe2. However, the low mobility of these materials greatly hinders the further promotion of device performance. For the first time, we demonstrate that HfS2, which has been proven to possess a much higher mobility of electrons and has been experimentally synthesized recently, fully satisfies conditions of heterostructure with BP. The heterojunction could be used as a tunable optoelectronic device and rectifier diode. With external normal electric field, the efficiency of photon-generated charge separation and rectification ratio could be manipulated. In addition, what i...
16 citations
TL;DR: It is argued that the magnetic coupling strength in Co/TM and Fe/TM multilayer systems, for which TM is a nonmagnetic transition metal, increases dramatically as a function of the electron per atom ratio, e/a, in the TM spacer layers.
Abstract: Experimentally, the magnetic coupling strength in Co/TM and Fe/TM multilayer systems, for which TM is a nonmagnetic transition metal, increases dramatically as a function of the electron per atom ratio, e/a, in the TM spacer layers. On the basis of simple model calculations we argue that this effect is a finite resonant increase of the coupling due to the variation of the band offset between the TM spacer and the magnetic host. We find that the specific form of the correlation is strongly influenced by the resonant coincidence of the TM bands with either the spin up or the spin down bands of the host, for particular values of e/a. We suggest new experiments to test the model
16 citations
TL;DR: In this paper, the InAs on (In,Ga)Sb interface has been found to be significantly broader than the reverse one and the asymmetry is the result of mixing between arsenic and antimony.
Abstract: The interfaces between (In,Ga)Sb and InAs(100) grown by molecular‐beam epitaxy have been investigated by x‐ray diffraction, x‐ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy. The InAs on (In,Ga)Sb interface has been found to be significantly broader than the reverse one and the asymmetry is the result of mixing between arsenic and antimony. The studies of the growth surfaces have shown a persistent presence of antimony on an InAs surface suggesting a lower, antimony‐rich, surface free energy. This energy imbalance indicates a driving mechanism behind the mixing of the group‐V elements as the growth of InAs on (Ga, In)Sb is commenced. The band offset of the InAs on (Ga,In)Sb has been determined by XPS. The In 4d and Ga 3d to valence‐band maximum binding energy differences for bulk InAs and GaSb were obtained by fitting the experimental valence‐band density of states (VBDOS) to the experimentally broadened, theoretical VBDOS. The core‐level separation between In 4d and Ga 3d peaks from the InAs/GaSb structure was determined by fitting Gaussian–Lorentzian functions to the peaks. The band offset was determined to be 0.62±0.1 eV.
16 citations
TL;DR: In this article, the valence band offsets of the common anion CdTe-HgTe, HgTe-ZnTe, ZnTe-CdTe, and GaAs-AlAs semiconductor pairs are calculated from the core level energies.
Abstract: The valence band offsets of the common‐anion CdTe–HgTe, CdTe–ZnTe, ZnTe–HgTe, and GaAs–AlAs semiconductor pairs are calculated from the core level energies. The good agreement obtained with experiment for lattice‐matched systems and a simple electrostatic model analysis suggest interface dipoles to have only a small effect. Furthermore, the microscopic origin of the failure of the common‐anion rule in lattice‐matched systems is identified: it is found that participation of cation d orbitals (neglected by tight‐binding and pseudopotential approaches alike) in the valence band maxima is responsible for much of the band offset in these systems.
16 citations
TL;DR: The structural properties and band offset determination of p-channel staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 heterostructure tunnel field effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated in this paper.
Abstract: The structural properties and band offset determination of p-channel staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to “virtual substrate.” Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In0.7Ga0.3As/GaAs0.35Sb0.65 heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 ± 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices.
16 citations