Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: In this article, a solution-deposited stoichiometric CBTSSe films with band gap of 1.59eV (x ≤ 3) and explore the fundamental film properties.
16 citations
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TL;DR: In this paper, the PBE0 hybrid density functional was employed for the analysis of the electronic properties and the charge transition levels of the O vacancy in crystalline HfSiO4 and in amorphous Hf-silicates, respectively.
Abstract: Using first-principles density functional theory calculations, we have investigated the O vacancy formation and the relevant induced defect states in hafnium silicates over a wide range of compositions. The PBE0 hybrid density functional was employed for the analysis of the electronic properties and the charge transition levels of the O vacancy in crystalline HfSiO4 and in amorphous Hf-silicates, respectively. Based on the generated structure models, eight typical kinds of O coordination structures were identified in amorphous Hf-silicates. Our calculated results show that the positions of the induced defect energy levels in the band gap and the formation energies of O vacancy are largely determined by the local structures of the vacancy sites, which appear to be nearly independent of the composition of amorphous Hf-silicates. Our calculations also show that O vacancy can possess the negative-U behavior in crystalline HfSiO4 but not in amorphous Hf-silicates, where most of the O vacancies can simply exhibit the negative-U behavior as in the positive charge states. Given the measured band offset of 3.40 eV between Si and amorphous Hf-silicates, a considerable number of O vacancies were found to prefer to stay in the charge neutral state as the Fermi level lies within the band gap region of Si. Furthermore, due to its relatively higher formation energy, the concentration of O vacancy in Hf-silicates can be much lower than that in m-HfO2 when the Fermi level lies below the midgap region of Si. Accordingly, a significantly reduced flat band voltage shift and less transient threshold voltage instability can be found in Hf-silicates as compared with m-HfO2, which are in good agreement with the recent experimental findings.
16 citations
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TL;DR: The electrical behaviour will be discussed in terms of the position of the bands, the presence of band bending and the expected built-in potential and how these can be engineered in order to achieve the maximum performance for this hetero-structure.
Abstract: The realization of transparent electronic and optoelectronic devices requires the use of transparent p-n junctions. In this context, understanding the band alignment at the interface between the p- and n-components represents a fundamental step towards the realization of high performance devices. In this work, the band alignment at the interface between Al-doped ZnO (AZO) and Ni-doped Cr2O3 has been analysed. The formation and evolution of the core levels as the interface progressively forms have been followed by means of x-ray Photoelectron Spectroscopy, x-ray diffraction and x-ray reflectivity. A type two (staggered) band alignment was identified, with the valence band offset and conduction band offset found to be 2.6 eV and 2.5 eV, respectively. The electrical behaviour will be discussed in terms of the position of the bands, the presence of band bending and the expected built-in potential and how these can be engineered in order to achieve the maximum performance for this hetero-structure.
16 citations
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26 May 2013TL;DR: Experimental results shows the proposed methods effectively reduce the artifact caused by edge offset, and reduce number of band offset by half without compromising coding efficiency.
Abstract: Sample adaptive offset (SAO) is the new in-loop filter in High Efficiency Video Coding (HEVC) standard. In this paper, the problems in the early version of SAO technique is discussed, and it is shown how the proposed methods improve its performance. It is proposed to restrict edge offset sign according to edge shape to reduce visual artifact caused by edge offset. It is also proposed to reduce number of band offset to facilitate implementation. Experimental results shows the proposed methods effectively reduce the artifact caused by edge offset, and reduce number of band offset by half without compromising coding efficiency.
16 citations