Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: In this article, selected properties of HgTe−CdTe superlattices are re-examined in light of the new consensus that the valence-band offset is large.
Abstract: Selected properties of HgTe‐CdTe superlattices are re‐examined in light of the new consensus that the valence‐band offset is large. We conclude that while the cutoff wavelength for infrared detectors remains easier to control in superlattices than in the corresponding Hg1−xCdxTe alloy, the advantage is less than was predicted earlier assuming a small offset. The reduction of tunneling noise and minority carrier collection efficiency are discussed on the basis of revised electron and hole masses in the growth direction.
15 citations
TL;DR: It is demonstrated that the newly designed BN/BX LHS have profound implications for developing advanced optoelectronics, such as high-performance light-emitting diodes and lasers, and shed new light on overcoming the enormous hurdle of ineffective and laborious material design.
Abstract: Identifying heterostructures with tunable band alignments remains a difficult challenge. Here, based on bond-orbital theory, we propose a series of new BN/BX (X = P, As, Sb) lateral heterostructures (LHS). Our first principles calculations reveal that the LHS interlines have a substantial impact on the electronic properties. Importantly, we start with the chemical concepts, such as bond length and strength as well as orbital overlap interaction, in an attempt to thoroughly investigate the electronic properties, namely the band offset, the band gap (Eg) and the state of the energy level. We demonstrate that the newly designed BN/BX LHS have profound implications for developing advanced optoelectronics, such as high-performance light-emitting diodes and lasers. Furthermore, the new BN/BX LHS designed from the chemical viewpoint can shed new light on overcoming the enormous hurdle of ineffective and laborious material design.
15 citations
TL;DR: In this paper, the tantalum oxide-platinum interface electronic properties determined by X-ray photoelectron spectroscopy are found to depend on the dielectric stoichiometry and platinum chemical state.
Abstract: The tantalum oxide–platinum interface electronic properties determined by X-ray photoelectron spectroscopy are found to depend on the dielectric stoichiometry and platinum chemical state. We demonstrate the slow charging of the tantalum oxide in cases of Ta2O5/Pt and Ta2O5−y/Pt interfaces under the X-ray irradiation. This behavior is proposed to be related to the charge accumulation at oxygen vacancies induced traps. Based on the proposed methodology, we define the intrinsic conductive band offset (CBO) ∼1.3 eV (both for Ta2O5/Pt and Ta2O5−y/Pt) and CBO after the full saturation of the traps charging ∼0.5 eV, while the last one defines the energy position of charged traps below the bottom of conduction band. We demonstrate also the pining at the both Ta2O5/Pt and Ta2O5−y/Pt interfaces even in the “intrinsic” state, apparently induced by the presence of additional interfacial states. No shifts of Ta4f line and band alignment in over stoichiometric Ta2O5+x/Pt structure during X-ray irradiation, as well as t...
15 citations
TL;DR: Semiconductor alloy heterojunctions, with compositions selected to achieve small band offset energies, were used in distributed Bragg reflector (DBR) structures for the purpose of lowering the vertical series resistance.
Abstract: Semiconductor alloy heterojunctions, with compositions selected to achieve small band offset energies, were used in distributed Bragg reflector (DBR) structures for the purpose of lowering the vertical series resistance The heterojunctions were simple abrupt interfaces without composition grading 40 period mirrors of AlGaInP/Al(Ga)As layer pairs were grown by gas-source molecular beam epitaxy Mirror reflectance values were found to be greater than 99% at wavelengths near 650 nm Measured specific resistance values, 28×10−4 Ω cm2 for a p-type DBR and 26×10−5 Ω cm2 for a n-type DBR, were comparable to or better than (Al)GaAs/Al(Ga)As DBRs employing various graded interface composition designs
15 citations
TL;DR: In this paper, a high-quality γ-In2Se3/p-Si heterojunction was prepared using pulse laser deposition (PLD) and the band structure was found to be type II structure.
Abstract: High-quality γ-In2Se3 thin films and a γ-In2Se3/p-Si heterojunction were prepared using pulse laser deposition (PLD). The band offset of this heterojunction was studied by XPS and the band structure was found to be type II structure. The valence band offset (ΔEv) and the conduction band offset (ΔEc) of the heterojunction were determined to be 1.2 ± 0.1 eV and 0.27 ± 0.1 eV, respectively. The γ-In2Se3/p-Si heterojunction photodetector has high responsivity under UV to visible light illumination. The heterojunction exhibits highly stable photodetection characteristics with an ultrafast response/recovery time of 15/366 μs. The ultrafast response time was attributed to type II structure band alignment, which was good for the separation of electron–hole pairs and it can quickly reduce recombination. These excellent properties make γ-In2Se3/p-Si heterojunctions a promising candidate for photodetector applications.
15 citations