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Band offset

About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.


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Journal ArticleDOI
TL;DR: The band offsets of heterojunctions of three-dimensional (3D) bonded semiconductors lie between two limits, the electron affinity rule (unpinned limit) and the matching of the charge neutrality l....
Abstract: The band offsets of heterojunctions of three-dimensionally (3D) bonded semiconductors lie between two limits, the electron affinity rule (unpinned limit) and the matching of the charge neutrality l...

14 citations

Journal ArticleDOI
TL;DR: In this paper, a visible-blind ultraviolet photodetector based on a p-Cu2CdSnS4/n-ZnS (CCTS/SnS) heterojunction was fabricated by the radio frequency magnetron sputtering technique.
Abstract: A visible-blind ultraviolet photodetector based on a p-Cu2CdSnS4/n-ZnS (CCTS/ZnS) heterojunction was fabricated by the radio frequency magnetron sputtering technique. Mo and In metals were used as p-type and n-type contact electrodes, respectively. Current−voltage measurement of the CCTS/ZnS heterojunction photodetector showed a good rectifying behavior. The photodetector showed a peak photocurrent at 330 nm and a sharp photocurrent edge at about 380 nm, suggesting a typical visible-blind characteristic. X-ray photoelectron spectroscopy measurements and first-principles calculations indicate that the CCTS/ZnS heterojunction has a type-I band alignment. The conduction-band offset leads to the barrier that inhibits the drifting of photo-generated electrons from p-CCTS to n-ZnS layer, well interpreting the spectral response characteristics of the device.

14 citations

Journal ArticleDOI
TL;DR: In this paper, X-ray photoelectron spectroscopy based on Kraut method was used to investigate the conduction band offset between ZnSnP2 and buffer materials, CdS, ZnS, and In2S3, using chemical bath deposition.
Abstract: Heterojunctions were formed between ZnSnP2 and buffer materials, CdS, ZnS, and In2S3, using chemical bath deposition The band offset was investigated by X-ray photoelectron spectroscopy based on Kraut method The conduction band offset, ΔEC, between ZnSnP2 and CdS was estimated to be −12 eV, which significantly limits the open circuit voltage, VOC Conversely, ΔEC at the heterojunction between ZnSnP2 and ZnS was +03 eV, which is within the optimal offset range In the case of In2S3, ΔEC was a relatively small value, −02 eV, and In2S3 is potentially useful as a buffer layer in ZnSnP2 solar cells The J−V characteristics of heterojunction diodes with an Al/sulfides/ZnSnP2 bulk/Mo structure also suggested that ZnS and In2S3 are promising candidates for buffer layers in ZnSnP2 thin film solar cells, and the band alignment is a key factor for the higher efficiency of solar cells with heterojunctions

14 citations

Journal ArticleDOI
TL;DR: In this article, the authors describe recent progress in this field, concentrating on metal contacts to wide band gap semiconductors, and the question of band offset engineering through intralayers, and some of the pitfalls of the technique are pointed out, such as in cases where the assumption of an equilibrium situation and/or the presence of a flat band condition in overlayers is not fulfilled.

14 citations

Journal ArticleDOI
TL;DR: How photocurrent and photoluminescence spectroscopies can be used together to construct a band diagram of an individual heterostructure nanowire with high spectral resolution, enabling quantification of conduction band offsets is reported on.
Abstract: Group III–V coaxial core–shell semiconducting nanowire heterostructures possess unique advantages over their planar counterparts in logic, photovoltaic, and light-emitting devices. Dimensional confinement of electronic carriers and interface complexity in nanowires are known to produce local electronic potential landscapes along the radial direction that deviate from those along the normal to planar heterojunction interfaces. However, understanding of selected electronic and optoelectronic carrier transport properties and device characteristics remains lacking without a direct measurement of band alignment in individual nanowires. Here, we report on, in the GaAs/AlxGa1–xAs and GaAs/AlAs core–shell nanowire systems, how photocurrent and photoluminescence spectroscopies can be used together to construct a band diagram of an individual heterostructure nanowire with high spectral resolution, enabling quantification of conduction band offsets.

14 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202336
202267
202178
202085
201980
201882