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Band offset

About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.


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Journal ArticleDOI
H. H. Wang1, Wei Wei1, Fengping Li1, Baibiao Huang1, Ying Dai1 
TL;DR: The results reveal that 2H stacking can enhance valence band splitting, while 3R stacking has a significant influence on conduction band splitting in trilayer TMD monolayers.
Abstract: We propose for the first time a kind of van der Waals (vdW) heterostructure composed of three distinct transition-metal dichalcogenide (TMD) monolayers, where step-like band alignment could be realized. In this case, excitons can be spatially separated into constituent top and bottom layers segregated by the middle layer. In light of the reduced binding energy and long lifetime of the interlayer excitons, trilayer TMD heterostructures hold great promise in applications such as solar cells and light-harvesting. In addition, heterostructures with different constituents and stacking orders give rise to distinct band offsets between neighboring layers. Other factors, like strain and SOC, also have apparent effects on the band offset. Our results reveal that 2H stacking can enhance valence band splitting, while 3R stacking has a significant influence on conduction band splitting. On account of the proper step-like band alignment and stacking-dependent band splitting, these trilayer TMD heterostructures also have great potential for applications in spintronics.

13 citations

Journal ArticleDOI
TL;DR: In this paper, the conduction-band offset at the Al0.15Ga0.85As/In 0.15As/GaAs pseudomorphic structure has been determined.
Abstract: We report a first determination of the conduction‐band offset in the strained‐layer Al0.15Ga0.85As/In0.15Ga0.85As/GaAs pseudomorphic structure. Two‐dimensional electron density and its effective mass are independently measured by Shubnikov–de Haas and cyclotron resonance experiments for a series of samples with a range of spacer thickness from 30 to 100 A. Using a charge transfer model, the conduction‐band offset at the Al0.15Ga0.85As/In0.15Ga0.85As interface is found to be (255±35) meV.

13 citations

Journal ArticleDOI
TL;DR: In this paper, the authors analyzed the effect of different mechanisms that induce electron transport across rectangular barriers, made of 200 AA thick GaAlAs layers embedded in GaAs, and triangular barriers at the (n+)GaAs-(n)GaInP interface, and determined the temperature and electric field range in which they apply.
Abstract: Electron transport across rectangular barriers, made of 200 AA thick GaAlAs layers embedded in GaAs, and triangular barriers at the (n+)GaAs-(n)GaInP interface has been studied. Current versus voltage and temperature characteristics have been analysed in order to extract the different mechanisms that induce this transport, and to determine the temperature and electric field range in which they apply. At low temperature and high field the current is driven by the Fowler-Nordheim regime. At higher temperatures the current is dominated by a defect-induced mechanism. This mechanism consists of the thermal emission of electrons into the barrier conduction band from defects lying in the barrier that can be refilled by tunnelling. The defect involved appears to be the deep state associated with the donor impurity, i.e. the DX centre. This study demonstrates that the apparent band offset depends strongly on the experimental conditions under which it is measured.

13 citations

Journal ArticleDOI
TL;DR: In this article, the expected band alignments for pseudomorphic InP/InxGa1−xAs heterostructures for growth on (001) InP are presented; wherein 0≤x≤1.0 relative to the lattice matched value is assumed.
Abstract: Estimates of the anticipated band alignments for pseudomorphic InP/InxGa1−xAs heterostructures for growth on (001) InP are presented; wherein 0≤x≤1.0. Linearity and transitivity of the valence‐band offset, ΔEv, are assumed for a given in‐plane lattice parameter, a∥≡a0(InP). Valence‐band offsets for ternary heterojunctions are obtained via linear interpolation of the self‐consistent interface calculations of Van deWalle and Martin (unpublished), whereas ΔEv for the lattice matched (In, Ga) As/InP heterojunction is taken as an input parameter. It is found that ΔEc shows a rather gradual increase for 0≤x 0.53. The present estimates imply an increase in ΔEc by more than 0.2 eV as x→1.0 relative to the lattice matched value, and that the partitioning of ΔEg between conduction and valence band in strained heterostructures maintains its lattice matched value. Potential applications are reviewed in brief.

13 citations

Journal ArticleDOI
TL;DR: In this paper, the authors characterized the ZnTe-CdS heterojunction by valence and core level photoemission with synchrotron radiation, using quantum wells grown in situ on znTe(110) substrates.
Abstract: We have characterized the ZnTe–CdS heterojunction by valence and core level photoemission with synchrotron radiation, using quantum wells grown in situ on ZnTe(110) substrates. The valence band offset of∼ΔEv=0.9 eV shows that this heterojunction is of the staggered type (type II), rarely encountered in experimental studies. We find evidence for chemical reaction involving Te at the interface. The band offsets at both sides of the CdS quantum well exhibit small differences on the order of 0.1 eV, which are also reflected in the dipole contribution at the interfaces. This study, while reporting only small deviations from commutativity, suggests that dipole contributions of varying magnitude, caused by interface reactions, influence the magnitude of the band offset.

13 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202336
202267
202178
202085
201980
201882