Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: In this article, the band discontinuity at AlGa1-xP/GaP heterointerfaces for varying Al content has been studied by capacitance-voltage measurements and self-consistent numerical analysis of the apparent carrier concentration profile by taking account of the true heterointerface position and donor deionization.
Abstract: The band discontinuity at AlxGa1-xP/GaP heterointerfaces for varying Al content has been studied by capacitance-voltage measurements and self-consistent numerical analysis of the apparent carrier concentration profile by taking account of the true heterointerface position and donor deionization. By extrapolating the results for the AlxGa1-xP/GaP system, it is shown that the band lineup of the AlP/GaP heterojunction is of type II with a conduction-band discontinuity of 0.23 eV. Discussion is presented of comparison with the previously reported values.
13 citations
TL;DR: In this paper, the authors used Ga-As dipole intralayers with the Ge valence band edge on the As side of the junction at lower energy to create 0.35-0.45 eV band offsets at Ge homojunctions.
Abstract: We have created 0.35–0.45 eV band offsets at Ge homojunctions using Ga–As dipole intralayers, with the Ge valence band edge on the As side of the junction at lower energy. This is, to our knowledge, the first time that intralayer control of band discontinuities is extended to homojunctions, thereby expanding the potential domain of band gap engineering. Because these offsets occur over just a few atomic spacings, they rival heterojunction band edge discontinuities in breadth. The offsets were measured with synchrotron‐radiation photoemission spectroscopy. Similar band offset magnitudes occur for both ‘‘Ga‐first’’ and ‘‘As‐first’’ growth sequences, consistent with a truly dipolar effect. Both cleaved Ge(111) and thick ≊50 A Ge films deposited on cleaved Ge(111) were used as substrates, obtaining consistent results. The sign and magnitude of the effect is in agreement with a ‘‘theoretical alchemy’’ model. Experimental evidence of microdiffusion is discussed.
13 citations
TL;DR: In this paper, the electronic and optical properties of novel two-dimensional van der Waals heterostructures constituted by ternary BCxN (x = 0, 2, and 6) and black phosphorene (BlackP) were investigated.
13 citations
TL;DR: In this article, the conduction and valence-band discontinuities in lattice matched p−GaSb heterojunctions were determined using the capacitance-voltage intercept method.
Abstract: Conduction‐ and valence‐band discontinuities in lattice‐matched p‐Ga0.77In0.23As0.20Sb0.80/n‐GaSb heterojunctions grown by liquid‐phase epitaxy have been determined using the capacitance‐voltage intercept method. The deduced energy‐band diagram shows a staggered‐lineup (type II) structure with conduction‐ and valence‐band offsets ΔEC=(330±50) meV and ΔEV=(120±50) meV.
13 citations
TL;DR: Synchrotron-radiation photoemission studies of heterovalent heterojunctions involving Ge and Cd 1-x Mn x Te alloys yielded valence-band offsets ΔE υ largely independent of semimagnetic composition and band gap.
Abstract: Synchrotron-radiation photoemission studies of heterovalent heterojunctions involving Ge and Cd 1-x Mn x Te alloys (x=0, 0.35, and 0.60) were performed on interfaces prepared in situ by Ge deposition on cleaved (110) semimagnetic semiconductor surfaces. The valence-band offsets ΔE υ were obtained with consistent results through a nonlinear least-squares fit of the interface valence-band emission in terms of a superposition of valence-band spectra for the individual semiconductors, and with a more conventional method utilizing the Te 4d and Ge 3d core-level emission. We and valence-band offsets ΔE υ =0.80-0.83 eV largely independent of semimagnetic composition and band gap
13 citations